SU3B1333B2G9 DDR3-1333(CL9) 204-Pin ECC SO-DIMM 2GB(256M x 72-bit) ADATA Technology Corp. Memory Module Data Sheet DDR3-1333(CL9) 204-Pin ECC SO-DIMM 2GB (256M x 72-bit) Version 0.0 Document Number : R11-0852 1 SU3B1333B2G9 DDR3-1333(CL9) 204-Pin ECC SO-DIMM 2GB(256M x 72-bit) Revision History Version 0.0 Changes - Initial release Page - Date 2012/3/14 2 SU3B1333B2G9 DDR3-1333(CL9) 204-Pin ECC SO-DIMM 2GB(256M x 72-bit) Table of Contents 1. General Description .................................................................................... 4 2. Features ..................................................................................................... 4 3. Pin Assignment ................................................................................... ….5~6 4. Pin Description ....................................................................................... 7~8 5. Block Diagram....................................................................................... 9~10 6. Absolute Maximum Ratings ...................................................................... 11 7. DC Operating Condition .......................................................... ……………11 8. Input DC & AC Logic Level for single-ended signals…………………..…11 9. Input AC Logic Level for single-ended signals…………………………….12 10. IDD Specification……………………………………………………………….13 11.Speed Bins and CL,tRCD,tRP,tRC and tRAS for Corresponding Bin …………………………………………………………….13 12. Timing Parameters …………..……………………………………………14~15 13. Package Dimensions……………………..……………………………………16 14. Ordering Information…………..……………...…….…………………………17 3 SU3B1333B2G9 DDR3-1333(CL9) 204-Pin ECC SO-DIMM 2GB(256M x 72-bit) General Description： The ADATA’s module is a 256Mx72 bit 2GB(2048MB) DDR3-1333(CL9)-9-9-24 SDRAM memory module. The SPD is programmed to JEDEC standard latency 1333Mbps timing of 9-9-9-24 at 1.5V. The module is composed of eight-teen 128Mx8 bit CMOS DDR3 SDRAMs in FBGA package and one 2Kbit EEPROM in 8pin TDFN package on a 204pin glass–epoxy printed circuit board. The module is a Dual In-line Memory Module and intended for mounting onto 204 pins edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable latencies and burst lengths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Features： • Power supply (Normal): VDD & VDDQ = 1.5V ± 0.075V • 1.5V (SSTL_15 compatible) I/O • MRS Cycle with address key programs - CAS Latency (5, 6, 7, 8, 9) - Burst Length (BL):8 and 4 with Burst Chop(BC) • Bi-directional, differential data strobe (DQS and /DQS) • Differential clock input (CK, /CK) operation • DLL aligns DQ and DQS transition with CK transition • Double-data-rate architecture; two data transfers per clock cycle • 8 independent internal bank • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ:240 ohm±1%) • Auto refresh and self refresh • Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE ≤ 95°C • 8-bit pre-fetch. • On Die Termination using ODT pin. • EEPROM software write protect. • Lead-free and Halogen free products are RoHS Compliant 4 SU3B1333B2G9 DDR3-1333(CL9) 204-Pin ECC SO-DIMM 2GB(256M x 72-bit) Pin Assignment： 204-PIN SODIMM Front PIN 1 Name PIN VREFDQ 53 204-PIN SODIMM Back Name PIN Name PIN Name PIN Name PIN Name PIN Name PIN Name VSS 105 A1 157 DM5 2 VSS 54 DQ28 106 A2 158 VSS 3 VSS 55 DQ24 107 A0 159 DQ42 4 DQ4 56 DQ29 108 BA1 160 DQ46 5 DQ0 57 DQ25 109 VDD 161 DQ43 6 DQ5 58 VSS 110 VDD 162 DQ47 7 DQ1 59 DM3 111 CLK0 163 VSS 8 VSS 60 DQS#3 112 CLK1 164 VSS 9 VSS 61 VSS 113 /CLK0 165 DQ48 10 /DQS0 62 DQ3 114 /CLK1 166 DQ52 11 DM0 63 DQ26 115 VDD 167 DQ49 12 DQS0 64 VSS 116 VDD 168 DQ53 13 DQ2 65 DQ27 117 A10/AP 169 VSS 14 VSS 66 DQ30 118 NC/CS3# 170 VSS 15 DQ3 67 VSS 119 BA0 171 /DQS6 16 DQ6 68 DQ31 120 NC/CS2# 172 DM6 17 VSS 69 CB0 121 WE# 173 DQS6 18 DQ7 70 VSS 122 RAS# 174 DQ54 19 DQ8 71 CB1 123 VDD 175 VSS 20 VSS 72 CB4 124 VDD 176 DQ55 21 DQ9 73 VSS 125 CAS# 177 DQ50 22 DQ12 74 CB5 126 ODT0 178 VSS 23 VSS 75 /DQS8 127 CS0# 179 DQ51 24 DQ13 76 DM8 128 NC/ODT1 180 DQ60 25 /DQS1 77 DQS8 129 NC/CS1# 181 VSS 26 VSS 78 VSS 130 A13 182 DQ61 27 DQS1 79 VSS 131 VDD 183 DQ56 28 DM1 80 CB6 132 VDD 184 VSS 29 VSS 81 CB2 133 DQ32 185 DQ57 30 /RESET 82 CB7 134 DQ36 186 /DQS7 31 DQ10 83 CB3 135 DQ33 187 VSS 32 VSS 84 VREFCA 136 DQ37 188 DQS7 33 DQ11 85 VDD 137 VSS 189 DM7 34 DQ14 86 VDD 138 VSS 190 VSS 35 VSS 87 CKE0 139 DQS4# 191 DQ58 36 DQ15 88 A15 140 DM4 192 DQ62 37 DQ16 89 CKE1 141 DQS4 193 DQ59 38 VSS 90 A14 142 DQ38 194 DQ63 39 DQ17 91 BA2 143 VSS 195 VSS 40 DQ20 92 A9 144 DQ39 196 VSS 41 VSS 93 VDD 145 DQ34 197 SA0 42 DQ21 94 VDD 146 VSS 198 EVENT# 43 /DQS2 95 A12/BC# 147 DQ35 199 VDDSPD 44 DM2 96 A11 148 DQ44 200 SDA 45 DQS2 97 A8 149 VSS 201 SA1 46 VSS 98 A7 150 DQ45 202 SCL 5 SU3B1333B2G9 DDR3-1333(CL9) 204-Pin ECC SO-DIMM 2GB(256M x 72-bit) 47 VSS 99 A5 151 DQ40 49 DQ18 101 VDD 153 51 DQ19 103 A3 155 203 VTT 48 DQ22 100 A6 152 VSS DQ41 50 DQ23 102 VDD 154 DQS5# VSS 52 VSS 104 A4 156 DQS5 204 VTT 6 SU3B1333B2G9 DDR3-1333(CL9) 204-Pin ECC SO-DIMM 2GB(256M x 72-bit) Pin Description： PIN NAME FUNCTION CK0~CK1 System Clock Active on the positive and negative edge to sample all inputs. /CK0~/CK1 Masks system clock to freeze operation from the next clock cycle. CKE should be enabled at CKE0 Clock Enable least on cycle prior new command. Disable input buffers for power down in standby Disables or Enables device operation by masking or enabling all input except CK, CKE and /S0~/S1 Chip Select L(U)DQM Row / Column address are multiplexed on the same pins. A0~A13 Address (Row Address: A0~A13 , Column Address: A0~A9 , Auto precharge: A10/AP) Selects bank to be activated during row address latch time. BA0~BA2 Banks Select Selects bank for read / write during column address latch time. DQ0~DQ63 Data Data and check bit inputs / outputs are multiplexed on the same pins. CB0~CB7 DQS0~DQS8, Data Strobe Bi-directional Data Strobe DM0~DM8 Data Mask Mask input data when DM is high. /RAS Row Address Strobe /DQS0~/DQS8 /CAS Latches row addresses on the positive edge of the CK with /RAS low Column Address Strobe Latches Column addresses on the positive edge of the CK with /CAS low /WE Write Enable VDD / VSS Power Supply/Ground Enables write operation and row recharge. Power and Ground for the input buffers and the core logic. VREFDQ Power Supply reference Power Supply for reference.DQ,DM.VDD/2 VREFCA Power Supply reference Power Supply for reference. Command , address, & control.VDD/2 VTT Power Supply VDDSPD SPD Power Supply SDA Serial data I/O Termination voltage. Used for address, command & control.VDD/2 Serial EEPROM power Supply EEPROM serial data I/O 7 SU3B1333B2G9 DDR3-1333(CL9) 204-Pin ECC SO-DIMM 2GB(256M x 72-bit) SCL Serial clock SA0~SA1 Address in EEPROM ODT0,ODT1 On Die Termination EEPROM clock input EEPROM address input When high, termination resistance is enabled for all DQ, /DQ and DM pins, assuming the function is enabled in the Extended Mode Register Set. TEST /RESET The TEST pin is reserved for bus analysis tools . /RESET In Active Low. This signal resets the DDR3 SDRAM 8 SU3B1333B2G9 DDR3-1333(CL9) 204-Pin ECC SO-DIMM 2GB(256M x 72-bit) Block Diagram： 9 SU3B1333B2G9 DDR3-1333(CL9) 204-Pin ECC SO-DIMM 2GB(256M x 72-bit) 10 SU3B1333B2G9 DDR3-1333(CL9) 204-Pin ECC SO-DIMM 2GB(256M x 72-bit) Absolute Maximum Ratings： Parameter Symbol Value Unit VDD -0.4 ~ 1.975 V VDDQ -0.4 ~1.975 V VIN, Vout -0.4 ~ 1.975 V TStg -55 ~ +100 ℃ Voltage on VDD supply relative to Vss Voltage on VDDQ pin relative to Vss Voltage on any pin relative to Vss Storage temperature Note: DDR3 SDRAM component specification. Operation Temperature Condition Parameter Symbol Value Unit Note Normal Operating Temperature Range TC 0~+85 ℃ 1 Extended Temperature Range (Optional) TC +85~+95 ℃ 1 Note: (1) If the DRAM case temperature is above 85 ℃, the Auto-Refresh command interval has to be reduced to tREFI=3.9us. DC Operating Condition： Voltage referenced to Vss = 0V, VDD&VDDQ=1.5V±0.075V, Tc = 0 to 85 ℃ Parameter Symbol Min Max Unit Note VDD 1.425 1.575 V 1,2 VDDSPD 3 3.6 V VDDQ 1.425 1.575 V 1,2 I/O Reference Voltage(CMD/ADD) VREFCA, (DC) 0.49 x VDDQ 0.51 x VDDQ V 3,4 I/O Reference Voltage(DQ) VREFDQ, (DC) 0.49 x VDDQ 0.51 x VDDQ V 3,4 VTT VDDQ/2 VDDQ/2 V Supply Voltage Supply Voltage for Output Termination Voltage Note: (1) Under all conditions VDDQ must be less than or equal to VDD. (2) VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together. (3) The AC peak noise on VREF may not allow VREF to deviate from VREF(DC) by more than ±1% VDD (for reference: approx. ±15mV) (4) For reference: approx. VDD/2 ±15mV 11 SU3B1333B2G9 DDR3-1333(CL9) 204-Pin ECC SO-DIMM 2GB(256M x 72-bit) Input DC & AC Logic Level for single-ended signals： Parameter Symbol Min Max Unit Note DC Input logic high voltage VIH (DC) VREF+100 VDD mV 1 DC Input logic low voltage VIL (DC) VSS VREF-100 mV 1 AC input logic high VIH(AC) VREF + 175 - mV 1,2 AC input logic low VIL(AC) - VREF – 175 mV 1,2 Note: 1. For DQ and DM, VREF = VREFDQ . For input only pins except RESET, or VREF = VREFCA. 2. See "Overshoot and Undershoot specifications" on component datasheet Input AC Logic Level for single-ended signals： Parameter Symbol Min Max Unit Note Differential input high VIHdiff +0.2 Note 3 V 1 Differential input low VILdiff Note 3 -0.2 V 1 Differential input high AC VIHdiff(AC) 2 (VIH(ac)-Vref) Note 3 V 2 Differential input low AC VILdiff (AC) Note 3 2 x (Vref - VIL(ac)) V 2 Notes: 1. Used to define a differential signal slew-rate. 2. For CK - CK use VIH/VIL(ac) of ADD/CMD and VREFCA; for DQS - DQS, DQSL - DQSL, DQSU - DQSU use VIH/VIL(ac) of DQs and VREFDQ; if a reduced ac-high or ac-low level is used for a signal group, then the reduced level applies also here. 3. These values are not defined, however they single-ended signals CK, /CK, DQS, /DQS, DQSL, /DQSL, DQSU, /DQSU need to be within the respective limits (VIH(dc) max, VIL(dc)min) for single-ended signals as well as the limitations for overshoot and undershoot on Component Datasheet. 12 SU3B1333B2G9 DDR3-1333(CL9) 204-Pin ECC SO-DIMM 2GB(256M x 72-bit) IDD Specification： Symbol Condition Typical Unit IDD0 Operating One Bank Active-Precharge Current 738 mA IDD1 Operating One Bank Active-Read-Precharge Current 873 mA IDD2P0 Precharge Power-Down Current Slow Exit 216 mA IDD2P1 Precharge Power-Down Current Fast Exit 540 mA IDD2Q Precharge Quiet Standby Current 810 mA IDD2N Precharge Standby Current 810 mA IDD3P Active Power-Down Current 630 mA IDD3N Active Standby Current 810 mA IDD4W Operating Burst Write Current 1323 mA IDD4R Operating Burst Read Current 1278 mA IDD5B Burst Refresh Current 1368 mA IDD6 Self Refresh Current: Normal Temperature Range 144 mA IDD7 Operating Bank Interleave Read Current 2313 mA Note: IDD current measure method and detail patterns are described on DDR3 component datasheet. Only for reference. Speed Bins and CL,tRCD,tRP,tRC and tRAS for Corresponding Bin： Speed DDR3-1333 Bin(CL-tRCD-tRP) 9-9-9 Parameter Min CL 9 tCK tRCD 13.125 ns tRC 49.125 ns tRRD 6 ns tCK 1.5 ns tRAS 36 ns tRP 13.125 ns tRFC 110 Ns Units 13 SU3B1333B2G9 DDR3-1333(CL9) 204-Pin ECC SO-DIMM 2GB(256M x 72-bit) Timing Parameters: Symbol AC Characteristics Parameter tCK(DLL_OFF) Minimum Clock Cycle Time (DLL off mode) Min Max Unit 8 - ns tCH(avg) Average high pulse width 0.47 0.53 tCK(avg) tCL(avg) Average low pulse width 0.47 0.53 tCK(avg) - 125 ps 0.38 - tCK(avg) 30 - ps 65 - ps tDQSQ tQH DQS, DQS# to DQ skew, per group, per access DQ output hold time from DQS, DQS# Data setup time to DQS, DQS# referenced to Vih(ac) / Vil(ac) tDS(base) levels Data hold time from DQS, DQS# referenced to Vih(dc) / Vil(dc) tDH(base) levels tDIPW DQ and DM Input pulse width for each input 400 - ps tRPRE DQS,DQS# differential READ Preamble 0.9 - tCK(avg) tRPST DQS, DQS# differential READ Postamble 0.3 - tCK(avg) tQSH DQS, DQS# differential output high time 0.40 - tCK(avg) tQSL DQS, DQS# differential output low time 0.40 - tCK(avg) tWPRE DQS, DQS# differential WRITE Preamble 0.9 - tCK(avg) tWPST DQS, DQS# differential WRITE Postamble 0.3 - tCK(avg) -255 255 ps DQS, DQS# rising edge output access time from rising CK, tDQSCK CK# tLZ DQ, DQS and DQS# low-impedance time -500 250 ps tHZ DQ, DQS and DQS# high-impedance time - 250 ps tDQSL DQS, DQS# differential input low pulse width 0.45 0.55 tCK(avg) tDQSH DQS, DQS# differential input high pulse width 0.45 0.55 tCK(avg) tDQSS DQS, DQS# rising edge to CK, CK# rising edge -0.25 0.25 tCK(avg) tDSS DQS, DQS# falling edge setup time to CK, CK# rising edge 0.2 - tCK(avg) tDSH DQS, DQS# falling edge hold time from CK, CK# rising edge 0.2 - tCK(avg) tRTP Internal READ Command to PRECHARGE Command delay max(4nCK,7.5ns) - - max(4nCK,7.5ns) - - WRITE recovery time 15 - ns Mode Register Set command cycle time 4 - nCK Command and Address setup time to CK, CK# referenced to 65 - ps Delay from start of internal write transaction to internal read tWTR command tWR tMRD tIS(base) 14 SU3B1333B2G9 DDR3-1333(CL9) 204-Pin ECC SO-DIMM 2GB(256M x 72-bit) Vih(ac) / Vil(ac) levels Command and Address hold time from CK, CK# referenced to tIH(base) 140 - ps max(3nCK,6ns) - - max(3nCK,5.625ns) - - 85℃<TCASE <95℃ 0℃<TCASE <85℃ /3.9 /7.8 Vih(dc) / Vil(dc) levels Exit Power Down with DLL on to any valid command; Exit tXP Precharge Power Down with DLL frozen to commands not requiring a locked DLL tCKE CKE minimum pulse width tREFI Average Periodic Refresh interval us 15 SU3B1333B2G9 DDR3-1333(CL9) 204-Pin ECC SO-DIMM 2GB(256M x 72-bit) Package Dimensions： Ordering Information： 16 SU3B1333B2G9 DDR3-1333(CL9) 204-Pin ECC SO-DIMM 2GB(256M x 72-bit) SU 3 B 1 3 3 3 B 2G 9 X X X 1-2 3 4 5-8 9 1011 12 13-15 1-2. Brand+Family Code 9. Component Config Code SU: ADATA B:128MX8 3. Generation 10-11. Capacity 3: DDR3 2G: 2GB D: DDR3L 4G: 4GB 4. DRAM Type 12. CAS Latency B: ECC SO-DIMM 9: CL9 11: CL11 5-8. Clock Speed 1333: 1333MHz 13-15. Package Code 17