New Product Si1563EDH Vishay Siliconix Complementary 20-V (D-S) Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 rDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.10 at VGS = - 1.8 V - 0.67 • TrenchFET® Power MOSFETS: 1.8 V Rated • ESD Protected: 2000 V • Thermally Enhanced SC-70 Package • Load Switching • PA Switch • Level Switch D1 6 D1 Marking Code EA G1 D2 5 2 3 4 XX G2 S2 S2 1k G1 YY 1 RoHS* COMPLIANT APPLICATIONS SOT-363 SC-70 (6-LEADS) S1 Pb-free Available Lot Traceability and Date Code G2 3k Part # Code N-Channel Top View P-Channel S1 D2 Ordering Information: Si1563EDH-T1 Si1563EDH-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel Parameter Symbol 5s P-Channel Steady State 5s Steady State Drain-Source Voltage VDS 20 - 20 Gate-Source Voltage VGS ± 12 ± 12 Continuous Drain Current (TJ = 150 °C) TA = 25 °C TA = 85 °C Continuous Source Current (Diode Conduction)a TA = 25 °C Maximum Power Dissipationa TA = 85 °C IS PD V 1.28 1.13 - 1.0 - 0.88 0.92 0.81 - 0.72 - 0.63 IDM Pulsed Drain Current Operating Junction and Storage Temperature Range ID 4.0 A - 3.0 0.61 0.48 - 0.61 - 0.48 0.74 0.57 0.30 0.57 0.38 0.30 0.16 0.3 TJ, Tstg Unit W - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 130 170 170 220 80 100 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 Board. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71416 S-80257-Rev. C, 04-Feb-08 www.vishay.com 1 New Product Si1563EDH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 100 µA N-Ch 0.45 VDS = VGS, ID = - 100 µA P-Ch - 0.45 VDS = 0 V, VGS = ± 4.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea IDSS ID(on) rDS(on) gfs VSD V N-Ch ±1 P-Ch ±1 N-Ch ± 10 P-Ch ± 10 VDS = 16 V, VGS = 0 V N-Ch 1 VDS = - 16 V, VGS = 0 V P-Ch -1 VDS = 16 V, VGS = 0 V, TJ = 85 °C N-Ch 5 VDS = - 16 V, VGS = 0 V, TJ = 85 °C P-Ch VDS ≥ 5 V, VGS = 4.5 V N-Ch 2 VDS ≤ - 5 V, VGS = - 4.5 V P-Ch -2 µA mA µA -5 A VGS = 4.5 V, ID = 1.13 A N-Ch 0.220 0.280 VGS = - 4.5 V, ID = - 0.88 A P-Ch 0.400 0.490 VGS = 2.5 V, ID = 0.99 A N-Ch 0.281 0.360 VGS = - 2.5 V, ID = - 0.71 A P-Ch 0.610 0.750 VGS = 1.8 V, ID = 0.20 A N-Ch 0.344 0.450 VGS = - 1.8 V, ID = - 0.20 A P-Ch 0.850 1.10 VDS = 10 V, ID = 1.13 A N-Ch 2.6 VDS = - 10 V, ID = - 0.88 A P-Ch 1.5 IS = 0.48 V, VGS = 0 V N-Ch 0.8 1.2 IS = - 0.48 V, VGS = 0 V P-Ch - 0.8 - 1.2 N-Ch 0.65 1.0 P-Ch 1.2 1.8 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qgd td(on) tr td(off) tf N-Channel VDS = 10 V, VGS = 4.5 V, ID = 1.13 A P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 0.88 A N-Channel VDD = 10 V, RL = 20 Ω ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω P-Channel VDD = - 10 V, RL = 20 Ω ID ≅ - 0.5 A, VGEN = - 4.5 V, Rg = 6 Ω N-Ch 0.2 P-Ch 0.3 N-Ch 0.23 P-Ch 0.3 nC N-Ch 45 70 P-Ch 150 230 N-Ch 85 130 P-Ch 480 720 N-Ch 350 530 1200 P-Ch 840 N-Ch 210 320 P-Ch 850 1200 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71416 S-80257-Rev. C, 04-Feb-08 New Product Si1563EDH Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10000 I GSS - Gate Current (µA) I GSS - Gate Current (mA) 1000 8 6 4 100 10 TJ = 150 °C 1 0.1 TJ = 25 °C 2 0.01 0 0.001 0 4 8 12 16 0 3 VGS - Gate-to-Source Voltage (V) 9 6 12 15 VGS - Gate-to-Source Voltage (V) Gate-Current vs. Gate-Source Voltage Gate-Current vs. Gate-Source Voltage 2.0 2.0 VGS = 5 thru 2 V TC = - 55 °C 25 °C I D - Drain Current (A) I D - Drain Current (A) 1.5 1.5 V 1.0 0.5 1.5 125 °C 1.0 0.5 1V 0.0 0 1 2 3 0.0 0.0 4 0.5 VDS - Drain-to-Source Voltage (V) 2.0 Transfer Characteristics 0.6 140 120 C - Capacitance (pF) 0.5 r DS(on) - On-Resistance (Ω) 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.4 1.0 VGS = 1.8 V VGS = 2.5 V 0.3 VGS = 4.5 V 0.2 100 Ciss 80 60 40 Coss 0.1 0.0 0.0 Crss 20 0 0.5 1.0 1.5 2.0 0 4 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance Document Number: 71416 S-80257-Rev. C, 04-Feb-08 20 www.vishay.com 3 New Product Si1563EDH Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.6 VDS = 10 V ID = 1.28 A VGS = 4.5 V ID = 1.13 A 1.4 3 2 (Normalized) 4 r DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 5 1.2 1.0 0.8 1 0 0.0 0.3 0.6 0.9 1.2 0.6 - 50 1.5 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 0.6 2 TJ = 150 °C 0.5 r DS(on) - On-Resistance (Ω) I S - Source Current (A) 1 TJ = 25 °C 0.4 ID = 1.13 A 0.3 0.2 0.1 0.0 0.1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 3 4 5 V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.2 5 ID = 100 µA 0.1 4 0.0 Power (W) V GS(th) Variance (V) 2 - 0.1 3 2 - 0.2 1 - 0.3 - 0.4 - 50 www.vishay.com 4 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 600 Document Number: 71416 S-80257-Rev. C, 04-Feb-08 New Product Si1563EDH Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 170 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 71416 S-80257-Rev. C, 04-Feb-08 www.vishay.com 5 New Product Si1563EDH Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 10000 6 I GSS - Gate Current (µA) I GSS - Gate Current (mA) 1000 4 2 100 TJ = 150 °C 10 1 0.1 TJ = 25 °C 0.01 0 0.001 0 4 8 12 VGS - Gate-to-Source Voltage (V) 0 16 3 9 6 12 15 VGS - Gate-to-Source Voltage (V) Gate-Current vs. Gate-Source Voltage Gate-Current vs. Gate-Source Voltage 3.0 3.0 VGS = 5 thru 3.5 V 3V 2.5 V 2.0 1.5 2V 1.0 1.5 V 0.5 TC = - 55 °C 2.5 I D - Drain Current (A) I D - Drain Current (A) 2.5 25 °C 2.0 125 °C 1.5 1.0 0.5 1V 0.0 0 1 2 3 0.0 0.0 4 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.5 160 1.6 Ciss 120 1.2 C - Capacitance (pF) r DS(on) - On-Resistance (Ω) VGS = 1.8 V VGS = 2.5 V 0.8 VGS = 4.5 V 80 40 0.4 Coss Crss 0.0 0.0 0 0.5 1.0 1.5 2.0 2.5 I D - Drain Current (A) On-Resistance vs. Drain Current www.vishay.com 6 3.0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 71416 S-80257-Rev. C, 04-Feb-08 New Product Si1563EDH Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.6 VDS = 10 V ID = 1 A 4 VGS = 4.5 V ID = 0.88 A 1.4 r DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 5 3 2 1.2 1.0 0.8 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.6 - 50 1.4 - 25 0 Qg - Total Gate Charge (nC) Gate Charge 50 75 100 125 150 On-Resistance vs. Junction Temperature 1.6 2 I S - Source Current (A) r DS(on) - On-Resistance (Ω) TJ = 150 °C 1 TJ = 25 °C 1.2 ID = 0.88 A 0.8 0.4 0.0 0.1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.30 5 0.25 ID = 100 µA 4 0.20 0.15 Power (W) V GS(th) Variance (V) 25 TJ - Junction Temperature (°C) 0.10 0.05 3 2 0.00 - 0.05 1 - 0.10 - 0.15 - 50 - 25 0 Document Number: 71416 S-80257-Rev. C, 04-Feb-08 25 50 75 100 125 150 0 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 600 www.vishay.com 7 New Product Si1563EDH Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 170 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71416. www.vishay.com 8 Document Number: 71416 S-80257-Rev. C, 04-Feb-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1