H5N3011P Silicon N Channel MOS FET High Speed Power Switching REJ03G0385-0200 Rev.2.00 Aug.05.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D 1. Gate 2. Drain (Flange) 3. Source G S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Rev.2.00, Aug.05.2004, page 1 of 6 Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 Ratings 300 ±30 88 176 88 176 Unit V V A A A A IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg 30 54 150 0.833 150 –55 to +150 A mJ W °C/W °C °C H5N3011P Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: 4. Pulse test Rev.2.00, Aug.05.2004, page 2 of 6 Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Min 300 — — 3.0 33 — Typ — — — — 56 0.042 Max — 1 ±0.1 4.5 — 0.048 Unit V µA µA V S Ω Test conditions ID = 10 mA, VGS = 0 VDS = 300 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 44 A, VDS = 10 V Note4 ID = 44 A, VGS = 10 VNote4 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd — — — — — — — — — — 5000 640 65 60 370 200 280 95 25 40 — — — — — — — — — — pF pF pF ns ns ns ns nC nC nC ID = 44 A VGS = 10 V RL = 3.4 Ω Rg = 10 Ω VDF trr Qrr — — — 1.0 260 2.5 1.5 — — V ns µC IF = 88 A, VGS = 0 Note4 IF = 88 A, VGS = 0 diF/dt = 100 A/µs VDS = 25 V VGS = 0 f = 1 MHz VDD = 240 V VGS = 10 V ID = 88 A H5N3011P Main Characteristics Power vs. Temperature Derating 300 100 ID (A) 150 100 50 1m 30 Operation in PW = 10 ms (1shot) 0.3 Ta = 25°C 0.01 50 100 Case Temperature 150 1 200 Tc (°C) Typical Output Characteristics Pulse Test 6V 60 5.5 V 40 20 VGS = 5 V 4 8 12 Drain to Source Voltage VDS = 10 V Pulse Test 80 6 ID = 88 A 4 Drain to Source on State Resistance RDS(on) (Ω) Pulse Test 60 40 20 Tc = 75°C 0 20 16 VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 8 100 300 1000 30 3 10 Drain to Source Voltage VDS (V) Typical Transfer Characteristics ID (A) 8V DC Operation (Tc = 25°C) 100 Drain Current ID (A) Drain Current 10 V 80 Drain to Source Saturation Voltage VDS(on) (V) 10 µ 0µ s s 0.1 0 0 10 3 this area is 1 limited by RDS(on) 0.03 100 s 10 Drain Current Pch (W) Channel Dissipation Maximum Safe Operation Area 1000 200 25°C −25°C 2 4 6 Gate to Source Voltage 10 8 VGS (V) Static Drain to Source on State Resistance vs. Drain Current 0.1 VGS = 10 V, 15 V 0.05 0.02 0.01 0.005 44 A 2 20 A 0 0.002 Pulse Test 0.001 12 4 8 Gate to Source Voltage Rev.2.00, Aug.05.2004, page 3 of 6 16 20 VGS (V) 1 3 10 30 100 300 Drain Current ID (A) 1000 0.16 ID = 88 A 0.12 44 A 0.08 20 A 0.04 0 −25 0 25 50 75 Case Temperature 100 125 150 25°C 3 75°C 1 0.3 VDS = 10 V Pulse Test 0.1 0.1 0.3 3 1 10 100 Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) 100 50 20 10 5 di / dt = 100 A / µs VGS = 0, Ta = 25°C 2 30 ID (A) VGS = 0 f = 1 MHz 30000 10000 Ciss 3000 1000 Coss 300 100 Crss 30 10 0 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) Dynamic Input Characteristics VGS 200 12 8 100 4 VDD = 240 V 100 V 50 V 40 80 Gate Charge Rev.2.00, Aug.05.2004, page 4 of 6 120 160 Qg (nC) 0 200 Switching Time t (ns) VDD = 50 V 100 V 240 V VDS VGS (V) ID = 88 A 50 100 150 Drain to Source Voltage VDS (V) Switching Characteristics 10000 16 Gate to Source Voltage 400 VDS (V) 10 100000 1 0.1 Drain to Source Voltage Tc = −25°C Drain Current 200 0 30 Tc (°C) 500 300 100 Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 0.2 VGS = 10 V Pulse Test Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (Ω) H5N3011P VGS = 10 V, VDD = 150 V PW = 5 µs, duty < 1 % RG = 10 Ω 1000 tf tr td(off) tf 100 td(on) tr 10 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 H5N3011P Gate to Source Cutoff Voltage vs. Case Temperature Reverse Drain Current vs. Source to Drain Voltage 5 Gate to Source Cutoff Voltage VGS(off) (V) Reverse Drain Current IDR (A) 100 80 60 VGS = 0 V 40 10 V 5V 20 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 VDS = 10 V ID = 10 mA 4 1 mA 3 0.1 mA 2 1 0 -25 0 VSD (V) 25 50 75 Case Temperature 100 125 150 Tc (°C) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 0.833°C/W, Tc = 25°C 0.1 0.05 PDM 0.03 0.02 1 0.0 0.01 10 µ D= e PW uls p ot T h 1s 100 µ PW T 1m 10 m 100 m Pulse Width PW (s) 1 Switching Time Test Circuit 10 Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin 10Ω Vin 10 V V DD = 150 V Vout 10% 10% 90% td(on) Rev.2.00, Aug.05.2004, page 5 of 6 tr 10% 90% td(off) tf H5N3011P Package Dimensions 15.6 ± 0.3 Unit: mm 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 As of January, 2003 4.8 ± 0.2 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 5.45 ± 0.5 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 Package Code JEDEC JEITA Mass (reference value) TO-3P — Conforms 5.0 g Ordering Information Part Name H5N3011P-E Quantity 30 pcs Shipping Container Plastic magazine Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00, Aug.05.2004, page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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