STY34NB50 - STMicroelectronics

STY34NB50
®
N - CHANNEL 500V - 0.11Ω - 34 A - Max247
PowerMESH MOSFET
TYPE
STY34NB50
■
V DSS
R DS(on)
ID
500 V
< 0.13 Ω
34 A
TYPICAL RDS(on) = 0.11 Ω
EXTREMELY HIGH dv/dt CAPABILITY
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
LOW INTRINSIC CAPACITANCE
GATE CHARGE MINIMIZED
REDUCED VOLTAGE SPREAD
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DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
Max247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLY (SMPS)
■ DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
■
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
VDGR
V GS
Value
Unit
Drain-source Voltage (V GS = 0)
Parameter
500
V
Drain- gate Voltage (R GS = 20 kΩ)
500
V
± 30
V
Gate-source Voltage
o
ID
Drain Current (continuous) at T c = 25 C
34
A
ID
Drain Current (continuous) at T c = 100 o C
21.4
A
Drain Current (pulsed)
136
A
Total Dissipation at T c = 25 C
450
W
Derating Factor
3.61
W/ o C
4.5
V/ns
I DM (•)
P tot
dv/dt (1)
T stg
Tj
o
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1998
-65 to 150
o
C
150
o
C
(1) ISD ≤34 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
STY34NB50
THERMAL DATA
R thj-case
R thj-amb
R thc-sink
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
o
0.277
30
0.1
300
Max
Max
Typ
C/W
C/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbol
I AR
Parameter
Max Value
Unit
34
A
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max)
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E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, I D = I AR , V DD = 50 V)
1000
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
I DSS
I GSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
Zero Gate Voltage
V DS = Max Rating
Drain Current (VGS = 0) V DS = Max Rating
o
C
Gate-body Leakage
Current (V DS = 0)
Min.
Typ.
Max.
500
VGS = 0
Unit
V
T c = 125
V GS = ± 30 V
10
100
µA
µA
± 100
nA
ON (∗)
Symbol
Parameter
Test Conditions
V GS(th)
Gate Threshold Voltage V DS = VGS
R DS(on)
Static Drain-source On
Resistance
ID(on)
ID = 250 µA
V GS = 10 V
Min.
Typ.
Max.
Unit
3
4
5
V
0.11
0.13
Ω
I D = 17 A
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
34
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/8
Parameter
Test Conditions
Forward
Transconductance
V DS > I D(on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D = 17 A
V GS = 0
Min.
Typ.
18
20
7000
950
80
Max.
Unit
S
9100
1235
104
pF
pF
pF
STY34NB50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
t d(on)
tr
Turn-on Time
Rise Time
V DD = 250 V
I D = 17 A
R G = 4.7 Ω
V GS = 10 V
(see test circuit, figure 3)
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 400 V ID = 34 A V GS = 10 V
Min.
Typ.
Max.
Unit
46
32
64
45
ns
ns
159
35
67
223
nC
nC
nC
SWITCHING OFF
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Symbol
t r(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
Min.
V DD = 400 V
I D = 34 A
V GS = 10 V
R G = 4.7 Ω
(see test circuit, figure 5)
Typ.
Max.
Unit
56
53
120
78
74
168
ns
ns
ns
Typ.
Max.
Unit
34
136
A
A
SOURCE DRAIN DIODE
Symbol
I SD
I SDM (•)
V SD (∗)
t rr
Q rr
I RRM
Parameter
Test Conditions
Min.
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 34 A
V GS = 0
I SD = 34 A
di/dt = 100 A/µs
o
V DD = 100 V
T j = 150 C
(see test circuit, figure 5)
1.6
V
950
ns
12
µC
25
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
STY34NB50
Output Characteristics
Transfer Characteristics
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Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STY34NB50
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
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Source-drain Diode Forward Characteristics
5/8
STY34NB50
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
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Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
Fig. 4: Gate Charge test Circuit
STY34NB50
Max247 MECHANICAL DATA
mm
DIM.
MIN.
A
4.70
TYP.
inch
MAX.
MIN.
TYP.
MAX.
5.30
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A1
2.20
2.60
b
1.00
1.40
b1
2.00
2.40
b2
3.00
3.40
c
0.40
0.80
D
19.70
20.30
e
5.35
5.55
E
15.30
15.90
L
14.20
15.20
L1
3.70
4.30
P025Q
7/8
STY34NB50
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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