BCR08AM-12 Triac Low Power Use REJ03G0343-0100 Rev.1.00 Aug.20.2004 Features • • • • IT (RMS) : 0.8 A VDRM : 600 V IRGTI, IRGTⅢ : 5 mA Planar Passivation Type Outline TO-92 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 3 2 Applications Electric fan, air cleaner, and other general purpose control applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.1.00, Aug.20.2004, page 1 of 6 Symbol Voltage class 12 Unit VDRM VDSM 600 720 V V BCR08AM-12 Parameter RMS on-state current Symbol IT (RMS) Ratings 0.8 Unit A Surge on-state current ITSM 8 A I2 t 0.26 A2s PGM PG (AV) VGM IGM Tj Tstg — 1 0.1 6 0.5 – 40 to +125 – 40 to +125 0.23 W W V A °C °C g Symbol IDRM VTM Min. — — Typ. — — Max. 1.0 2.0 Unit mA V Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 1.2 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Notes: 1. Gate open. Conditions Commercial frequency, sine full wave 360° conduction, Tc = 56°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Gate trigger currentNote2 ΙΙ VRGTΙ — — 2.0 V ΙΙΙ VRGTΙΙΙ — — 2.0 V ΙΙ IRGTΙ — — 5 mA ΙΙΙ IRGTΙΙΙ — — 5 mA Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate non-trigger voltage VGD 0.1 — — V Tj = 125°C, VD = 1/2 VDRM Thermal resistance Rth (j-c) — — 60 °C/W Junction to caseNote3 Critical-rate of rise of off-state (dv/dt)c 0.5 — — V/µs Tj = 125°C commutating voltageNote4 Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 0.4 A/ms 3. Peak off-state voltage VD = 400 V Rev.1.00, Aug.20.2004, page 2 of 6 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR08AM-12 Performance Curves Maximum On-State Characteristics 10 Surge On-State Current (A) Tj = 25°C 3 2 100 7 5 3 2 Gate Voltage (V) 3 2 101 7 5 3 2 100 7 5 3 2 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 10–1 7 5 3 1.5 2.0 2.5 3.0 3.5 8 7 6 5 4 3 2 1 4.0 2 3 4 5 7 101 2 3 4 5 7 102 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Characteristics ( II and III) Gate Trigger Current vs. Junction Temperature VGM = 6V PGM = 1W PG(AV) = 0.1W VGT IGM = 0.5A IRGT I, IRGT III VGD = 0.1V 3 5 7 101 2 3 5 7 10 2 2 3 5 7 103 103 7 5 Typical Example 3 2 102 7 5 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case, Junction to ambient) 103 7 5 Typical Example 3 2 102 7 5 3 2 101 9 0 100 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) 10–1 1.0 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Rev.1.00, Aug.20.2004, page 3 of 6 Transient Thermal Impedance (°C/W) On-State Current (A) 101 7 5 Rated Surge On-State Current 2 3 4 5 310 2 3 5 7 10 2 3 5 7 10 2 3 5 7 10 2 Junction to ambient 102 7 5 Junction to case 3 2 101 7 5 3 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR08AM-12 Allowable Case Temperature vs. RMS On-State Current Maximum On-State Power Dissipation 160 1.6 360° Conduction 1.4 Resistive, 1.2 inductive loads 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Curves apply regardless of conduction angle 140 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 160 Ambient Temperature (°C) Case Temperature (°C) 1.8 Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) On-State Power Dissipation (W) 2.0 105 7 5 3 2 Typical Example 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 20 40 60 80 100 120 140 Junction Temperature (°C) Latching Current vs. Junction Temperature Holding Current vs. Junction Temperature 102 103 Typical Example 7 5 Latching Current (mA) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) 0 3 2 102 7 5 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Rev.1.00, Aug.20.2004, page 4 of 6 7 5 3 2 Distribution T2+, G– Typical Example 101 7 5 3 2 100 7 5 3 2 10–1 T2–, G– Typical Example –40 0 40 80 120 Junction Temperature (°C) 160 BCR08AM-12 Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 160 Typical Example Tj = 125°C 140 120 I Quadrant 100 80 60 40 III Quadrant 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Rate of Rise of Off-State Voltage (V/µs) Commutation Characteristics Gate Trigger Current vs. Gate Current Pulse Width 101 7 5 Typical Example Tj = 125°C IT = 1A τ = 500µs VD = 200V 3 2 100 7 5 3 2 Breakover Voltage vs. Rate of Rise of Off-State Voltage Junction Temperature (°C) Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Breakover Voltage vs. Junction Temperature III Quadrant Minimum Characteristics Value 10–1 10–1 2 I Quadrant 5 7 100 3 2 3 5 7 101 Rate of Decay of On-State Commutating Current (A/ms) 6Ω A 6V V 330Ω Test Procedure II Rev.1.00, Aug.20.2004, page 5 of 6 A 6V V 3 2 Typical Example IRGT I IRGT III 102 7 5 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits 6Ω 103 7 5 330Ω Test Procedure III BCR08AM-12 Package Dimensions TO-92 EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material Conforms Conforms 0.23 Cu alloy φ 5.0 max 11.5 min 5.0 max 4.4 1.25 1.25 3.6 1.1 Circumscribed circle φ 0.7 Symbol Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 500 Type name +A Lead form Vinyl sack 500 Type name +A – Lead forming code Form A8 Taping 2000 Type name +A – TB Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6 Standard order code example BCR08AM-12A BCR08AM-12A-A6 BCR08AM-12A-TB Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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