SD2932 - STMicroelectronics

SD2932
HF/VHF/UHF RF power N-channel MOSFETs
Features
■
Gold metallization
■
Excellent thermal stability
■
Common source configuration, push-pull
■
POUT = 300 W min. with 15 dB gain @ 175 MHz
Description
The SD2932 is a gold metalized N-channel MOS
field-effect RF power transistor, intended for use
in 50 V dc large signal applications up to 250
MHz.
M244
Epoxy sealed
Figure 1.
Pin connection
1
1
3
3
2
2
3. Source
1. Drain
2. Gate
Table 1.
Device summary
Order code
Marking
Base qty.
Package
Packaging
SD2932W
SD2932(1)
15
M244
Tube
1. For more details please refer to Chapter 12: Marking, packing and shipping specifications.
January 2012
Doc ID 6876 Rev 9
1/23
www.st.com
23
Contents
SD2932
Contents
1
2
Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2
Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
Typical performances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.1
Typical performance (175 MHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5
Test circuit 175 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
6
Test circuit photomaster . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
7
Typical broadband data (175 - 230 MHz) . . . . . . . . . . . . . . . . . . . . . . . . 13
8
Test circuit 175 - 230 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
9
Typical broadband data (88 -108 MHz) . . . . . . . . . . . . . . . . . . . . . . . . . 16
10
Test circuit 88 - 108 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
11
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
12
Marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 21
13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2/23
Doc ID 6876 Rev 9
SD2932
Electrical data
1
Electrical data
1.1
Maximum ratings
Table 2.
Absolute maximum ratings (TCASE = 25°C)
Symbol
V(BR)DSS
VDGR
VGS
ID
PDISS
Tj
TSTG
1.2
Parameter
Value
Unit
Drain source voltage
125
V
Drain-gate voltage (RGS = 1MΩ)
125
V
Gate-source voltage
±20
V
Drain current
40
A
Power dissipation
500
W
Max. operating junction temperature
+200
°C
-65 to +150
°C
Value
Unit
0.35
°C/W
Storage temperature
Thermal data
Table 3.
Symbol
Rthj-c
Thermal data
Parameter
Junction - case thermal resistance
Doc ID 6876 Rev 9
3/23
Electrical characteristics
2
SD2932
Electrical characteristics
TCASE = +25 oC
2.1
Static
Table 4.
Static (per section)
Symbol
Test conditions
Min
125
Typ
Max
Unit
V(BR)DSS
VGS = 0 V
IDS = 100 mA
IDSS
VGS = 0 V
VDS = 50 V
50
µA
IGSS
VGS = 20 V
VDS = 0 V
250
nA
VGS(Q)
VDS = 10 V
ID = 250 mA
4
V
VDS(ON)
VGS = 10 V
ID = 10A
3
V
GFS
VDS = 10 V
ID = 5 A
VDS = 10 V
ID = 250 mA
CISS
VGS = 0 V
VDS = 50 V
f = 1 MHz
480
pF
COSS
VGS = 0 V
VDS = 50 V
f = 1 MHz
190
pF
CRSS
VGS = 0 V
VDS = 50 V
f = 1 MHz
18
pF
ΔVGS
(1)
V
1.5
5
mho
200
mV
1. Absolute VGS difference between side 1 and side 2 of the device
2.2
Dynamic
Table 5.
Dynamic
Symbol
4/23
Test conditions
IDQ = 500 mA
Min
f = 175 MHz
Typ
Unit
POUT
VDD = 50 V
GPS
VDD = 50 V, IDQ = 500 mA, POUT = 300 W, f = 175 MHz
15
16
dB
hD
VDD = 50 V, IDQ = 500 mA, POUT = 300 W, f = 175 MHz
50
60
%
VDD = 50 V, IDQ = 500 mA, POUT = 300 W, f = 175 MHz
Load
mismatch All phase angles
5:1
Doc ID 6876 Rev 9
300
Max
W
VSWR
SD2932
3
Impedance data
Impedance data
Figure 2.
Impedance data
D
ZDL
Typical Drain
Load Impedance
Typical Input
Impedance
G
ZIN
S
Table 6.
Note:
Impedance data
Freq
ZIN (Ω)
ZDL (Ω)
175 MHz
0.92 - j 0.14
3.17 + j 4.34
Measured Gate to Gate and Drain to Drain, respectively.
Doc ID 6876 Rev 9
5/23
Typical performances
SD2932
4
Typical performances
Figure 3.
Maximum thermal resistance vs
case temperature
Rth(j-c) (ºC/W)
0.42
0.4
0.38
0.36
0.34
25
30
35
40
45
50
55
60
65
70
75
80
85
Tc, CASE TEMPERATURE (°C)
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
Figure 4.
Gate voltage vs case temperature
1.15
1.1
Id=5 A
Id=9 A
Id=10 A
Id=7 A
1.05
Id=11 A
1
0.95
Id=4 A
0.9
Id=1 A
Id=2 A
Id=.1 A
0.85
Id=.25 A
0.8
-25
0
25
50
75
100
Tcase, CASE TEMPERATURE (°C)
Figure 5.
Capacitance vs drain-source
voltage
Figure 6.
20
ID, DRAIN CURRENT (A)
C, CAPACITANCE (pF)
10000
1000
Ciss
Coss
100
Crss
10
T=-20 °C
Vds=10 V
T=+25 °C
15
T=+80 °C
10
5
0
0
10
20
30
40
50
2
VDS, DRAIN-SOURCE VOLTAGE (V)
6/23
Drain current vs gate voltage
2.5
3
3.5
4
4.5
5
VGS, GATE-SOURCE VOLTAGE (V)
Doc ID 6876 Rev 9
5.5
6
SD2932
Typical performances
Figure 7.
Maximum safe operating area
-AX$RAIN#URRENT
)D!
4CASE #4J #
$#
M3
M3
$RAINSUPPLYVOLTAGE 6DD6
Transient thermal impedance
4RANSIENT
4HERMAL)MPEDANCE:THJC #7
Figure 8.
!-V
3INGLEPULSE
%
%
%
%
%
2ECTANGULAR0OWER0ULSE7IDTH SEC
!-V
Doc ID 6876 Rev 9
7/23
Typical performances
Figure 9.
4.1
SD2932
Transient thermal model
Typical performance (175 MHz)
Figure 10. Output power vs input power
Figure 11. Output power vs input power
600
500
Pout, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
600
Vdd=50 V
400
Vdd=40 V
300
200
Vdd=50V
Idq=2 x 250mA
F=175Mhz
100
0
T=-20 °C
500
T=+25 °C
400
T=+80 °C
300
200
Vdd=50V
Idq=2 x 250mA
F=175Mhz
100
0
0
2
4
6
8
10
12
14
16
18
20
22
0
Pin, INPUT POWER (W)
8/23
2
4
6
8
10
12
14
Pin, INPUT POWER(W)
Doc ID 6876 Rev 9
16
18
20
22
SD2932
Typical performances
Figure 12. Power gain vs output power
Figure 13. Efficiency vs output power
80
17
70
Nc, EFFICIENCY (%)
Gp, POWER GAIN (dB)
18
16
15
14
13
Vdd=50V
Idq=2 x 250mA
F=175Mhz
12
11
100
200
300
50
40
30
Vdd=50V
Idq=2 x 250mA
F=175Mhz
20
10
0
60
400
10
500
0
100
Pout, OUTPUT POWER (W)
Table 7.
Output power vs supply voltage
300
400
500
Figure 14. Output power vs gate voltage
450
400
Idq=2 x 250mA
F=175Mhz
400
Pout, OUTPUT POWER (W)
Pout,OUTPUT POWER (W)
200
Pout, OUTPUT POWER (W)
Pin=15.6 W
350
300
Pin=7.8 W
250
200
Pin=3.9 W
150
100
24
26
28
30
32
34
36
38
40
42
44
46
48
50
T=+25 °C
300
T=-20 °C
T=+80 °C
200
100
Vdd=50V
Idq=2 x 250mA
F=175Mhz
0
-3
Vdd,DRAIN VOLTAGE (V)
-2
-1
0
1
2
3
VGS, GATE_SOURCE VOLTAGE (V)
Doc ID 6876 Rev 9
9/23
Test circuit 175 MHz
5
SD2932
Test circuit 175 MHz
Figure 15. 175 MHz test circuit schematic (production test circuit
NOTES:
1. DIMENSION AT COMPONENT SYMBOL ARE REFERENCE FOR COMPONENT PLACEMENT.
2. GAP BETWEEN GROUND & TRANSMISSION LINES IS + 0.002{0.05} - O.OOO[0.00] TYP
REF. 1022256B
Table 8.
175 MHz test circuit part list
Component
R1,R2,R5,R6
Description
470 Ohm 1 W, surface mount chip resistor
R3,R4
360 Ohm 0.5 W, carbon comp. axial lead resistor or equivalent
R7,R8
560 Ohm 2 W, resistor two turn wire air-wound axial lead resistor
R9,R10
20 K Ohm 3.09 W, 10 turn wirewound precision potentiometer
C1,C4
680 pF ATC 130B surface mount ceramic chip capacitor
C2,C3,C7,C8,C17,C19,
10000 pF ATC 200B surface mount ceramic chip capacitor
C20,C21
C5
75 pF ATC 100B surface mount ceramic chip capacitor
C6
ST40 25 pF - 115 pF miniature variable trimmer
C9,C10
47 pF ATC 100B surface mount ceramic chip capacitor
C11,C12, C13
43 pF ATC 100B surface mount ceramic chip capacitor
C14,C15,C24,C25
1200 pF ATC 700B surface mount ceramic chip capacitor
C16,C18
470 pF ATC 700B surface mount ceramic chip capacitor
10/23
Doc ID 6876 Rev 9
SD2932
Table 8.
Test circuit 175 MHz
175 MHz test circuit part list (continued)
Component
Description
C22,C23
0.1 μF / 500 V surface mount ceramic chip capacitor
C26,C27
0.01 μF / 500 V surface mount ceramic chip capacitor
C28
10 μF / 63 aluminum eletrolytic axial lead capacitor
B1
50 Ohm RG316 O.D 0.076[1.93] L = 11.80[299.72] flexible coaxial cable 4 Turns thru
ferrite bead
B2
50 Ohm RG-142B O.D 0.165[4.19] L = 11.80[299.72] flexible coaxial cable
T1
R.F. Transformer 4:1, 25 Ohm O.D RG316-25 O.D 0.080[2.03] L = 5.90[149.86] flexible
coaxial cable 2 turns thru fferrite multi-aperture core
T2
R.F. transformer 1:4, 25 Ohm semi-rigid coaxial cable O.D. 0.141[3.58] L = 5.90[149.86]
L1
Inductor λ 1/4 wave 50 Ohm O.D 0.165[4.19] L = 11.80 [299.72] flexible coaxial cable 2
turns thru ferrite bead
FB1,FB5
Shield bead
FB2,FB6
Multi-aperture core
FB3
Multilayer ferrite chip bead (surface mount)
FB4
Surface mount EMI shield bead
PCB
Woven glass reinforced PTFE microwave laminate 0.06”, 1 oz EDCu, both sides, εr =
2.55
Doc ID 6876 Rev 9
11/23
Test circuit photomaster
6
SD2932
Test circuit photomaster
4 inches
Figure 16. 175 MHz test circuit photomaster
8.50 inches
Figure 17. 175 MHz test fixture
12/23
Doc ID 6876 Rev 9
SD2932
7
Typical broadband data (175 - 230 MHz)
Typical broadband data (175 - 230 MHz)
Figure 18. Input power vs frequency
Figure 19. Power gain vs frequency
18
Gp , POWER GAIN (dB)
Pin , INPUT POWER (W)
12
10
8
6
Vdd = 50V
Idq = 300 mA
Pout = 250W
4
2
160
170
180
190
200
210
220
230
17
16
15
14
13
11
10
160
240
Vdd = 50V
Idq = 300 mA
Pout = 250W
12
170
180
200
210
220
230
240
230
240
Figure 21. Return loss vs frequency
80
0
Vdd = 50V
Idq = 300 mA
Pout = 250W
75
70
RTL , RETURN LOSS (dB)
Nd , DRAIN EFFICIENCY (%)
Figure 20. Efficiency vs frequency
65
60
55
50
45
160
190
FREQUENCY (MHz)
FREQUENCY (MHz)
170
180
190
200
210
220
230
240
FREQUENCY (MHz)
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
160
Vdd = 50V
Idq = 300 mA
Pout = 250W
170
180
190
200
210
220
FREQUENCY (MHz)
P1dB , 1dB COMPRESSION (W)
Figure 22. 1 dB compression point vs
frequency
350
325
300
275
250
160
Vdd = 50V
Idq = 300 mA
170
180
190
200
210
220
230
240
FREQUENCY (MHz)
Doc ID 6876 Rev 9
13/23
Test circuit 175 - 230 MHz
8
SD2932
Test circuit 175 - 230 MHz
Figure 23. 175 - 230 MHz test circuit layout (engineering fixture)
Table 9.
175 - 230 MHz circuit layout component part list
Component
PCB
T1
1/32” woven fiberglass 0.030 Cu, sides, εr = 4.8
50 Ohm flexible coax cable OD 0.06”, 3” long. ferrite Core NEOSIDE
T2,T3
9:1transformer, 16.5 Ohm flexible coax cable 0.1”, 3” Long
T4,T5
4:1 transformer, 25 Ohm flexible coax cable OD 0.06”, 5” Long
C1
8.2 pF ceramic cap
C2,C3
100 pF ceramic cap
C4
2 - 18 pF chip cap
C5
47 pF ceramic cap
C6,C11
47 nF ceramic cap
C7
56 pF ATC chip cap
C8,C9,C13
470 pF ATC chip cap
C10
100 nF ceramic cap
C12
2 x 330 nF / 50 V cap
C14
10 nF / 63 V electrolityc cap
R1,R3
R2
14/23
Description
47 Ohm resistor
6.8 K Ohm chip resistor
Doc ID 6876 Rev 9
SD2932
Table 9.
Test circuit 175 - 230 MHz
175 - 230 MHz circuit layout component part list (continued)
Component
Description
R4
4.7 K Ohm multi turns trim resistor
R5
8.2 K Ohm / 5 W resistor
R6
3.3 K Ohm / 5 W resistor
D1
6.8 V Zener diode
L1
20 nH Inductor
L2
70 nH Inductor
L3
30 nH Inductor
L4
10 nH Inductor
L5
15 nH Inductor
Doc ID 6876 Rev 9
15/23
Typical broadband data (88 -108 MHz)
9
SD2932
Typical broadband data (88 -108 MHz)
Figure 24. Input power vs frequency
Figure 25. Power gain vs frequency
22
Gp , POWER GAIN (dB)
Pin , INPUT POWER (W)
4
Vdd = 50V
Idq = 200 mA
Pout = 300W
3.5
3
2.5
21
20
19
Vdd = 50V
Idq = 200 mA
Pout = 300W
18
17
16
85
90
95
100
105
110
85
90
FREQUENCY (MHz)
Figure 26. Efficiency vs frequency
RTL , RETURN LOSS (dB)
Nd , EFFICIENCY (%)
105
110
0
78
76
74
72
70
68
Vdd = 50V
Idq = 200 mA
Pout = 300W
66
64
62
60
-2
Vdd = 50V
Idq = 200 mA
Pout = 300W
-4
-6
-8
-10
-12
-14
-16
-18
-20
85
90
95
100
105
110
85
90
FREQUENCY (MHz)
Vdd = 50V
Idq = 200 mA
Pout = 300W
85
90
95
100
100
105
110
Figure 29. 3rd harmonic vs frequency
(88 - 108 MHz)
H3 , 3rd HARMONIC (dBc)
-10
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
-32
-34
-36
95
FREQUENCY (MHz)
Figure 28. 2nd harmonic vs. frequency
(88 - 108 MHz)
H2 , 2nd HARMONIC (dBc)
100
Figure 27. Return loss vs frequency
80
105
110
-10
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
-32
-34
-36
Vdd = 50V
Idq = 200 mA
Pout = 300W
85
FREQUENCY (MHz)
16/23
95
FREQUENCY (MHz)
90
95
100
FREQUENCY (MHz)
Doc ID 6876 Rev 9
105
110
SD2932
Test circuit 88 - 108 MHz
10
Test circuit 88 - 108 MHz
Figure 30. 88 - 108 MHz test circuit layout (engineering fixture)
Table 10.
175 - 230 MHz circuit layout component part list
Component
PCB
T1
Description
1/32” woven fiberglass 0.030 Cu, 2 sides, εr = 4.8
50 Ohm flexible coax cable OD 0.06”, 5” Long
T2,T3
9:1 transformer, 25 Ohm flexible coax cable OD 0.1”, 3.9”. ferrite core NEOSIDE
T4,T5
4:1 transformer, 25 Ohm flexible coax cable OD 0.1”, 5” Long
T6
50 Ohm flexible coax cable OD 0.1”, 5” long
FB1
vk200
C1
10 pF ceramic cap
C2,C3,C4,C7,C8
C5,C6
1 nF chip cap
1 nF ATC chip cap
C9
470 pF ATC chip cap
C10
100 nF chip cap
C11
100 mF / 63 V electrolityc cap
R1
56 Ohm resistor
R2,R4
10 Ohm chip resistor
R3
10 K Ohm resistor
R5
5.6 Ohm resistor
Doc ID 6876 Rev 9
17/23
Test circuit 88 - 108 MHz
Table 10.
SD2932
175 - 230 MHz circuit layout component part list (continued)
Component
18/23
Description
R6
10 K Ohm, 10 turn trim resistor
R7
3.3 K Ohm / 5 W resistor
R8
15 Ohm / 5 W resistor
D1
6.6 V Zener diode
L1
10 nH inductor
L2
40 nH inductor
L3
70 nH inductor
Doc ID 6876 Rev 9
SD2932
11
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Doc ID 6876 Rev 9
19/23
Package mechanical data
Table 11.
SD2932
M244 (.400 x .860 4/L BAL N/HERM W/FLG) mechanical data
mm.
Inch
Dim.
Min
A
Typ
5.59
B
Max
Min
5.84
0.220
5.08
Typ
Max
0.230
0.200
C
3.02
3.28
0.119
0.129
D
9.65
9.91
0.380
0.390
E
19.81
20.82
0.780
0.820
F
10.92
11.18
0.430
0.440
G
27.94
1.100
H
33.91
34.16
1.335
1.345
I
0.10
0.15
0.004
0.006
J
1.52
1.78
0.060
0.070
K
2.59
2.84
0.102
0.112
L
4.83
5.84
0.190
0.230
M
10.03
10.34
0.395
0.407
N
21.59
22.10
0.850
0.870
Figure 31. Package dimensions
Controlling Dimension: Inches
20/23
1020876B
Doc ID 6876 Rev 9
SD2932
12
Marking, packing and shipping specifications
Marking, packing and shipping specifications
Table 12.
Packing and shipping specifications
Order code
Packaging
Pcs per tray
Dry pack
humidity
Lot code
SD2932W
Tube
15
< 10 %
Not mixed
Figure 32. Marking layout
Table 13.
Marking specifications
Symbol
Description
W
Wafer process code
CZ
Assy plant
xxx
Last 3 digit of diffusion lot
VY
Diffusion plant
MAR
Country of origin
CZ
Test and finishing plant
y
Assy year
yy
Assy week
Doc ID 6876 Rev 9
21/23
Revision history
13
SD2932
Revision history
Table 14.
22/23
Document revision history
Date
Revision
Changes
15-Jul-2004
5
24-Jan-2006
6
Updated Table 4: Static (per section).
23-Nov-2009
7
Inserted ΔVGS in Table 4: Static (per section).
31-Mar-2010
8
Added Figure 7, Figure 8 and Figure 9.
11-Jan-2012
9
Inserted Chapter 12: Marking, packing and shipping specifications.
Minor text changes.
Doc ID 6876 Rev 9
SD2932
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