PD85035C RF power transistor, LdmoST family Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.5 dB gain @ 945 MHz / 13.6 V ■ BeO-free ceramic package ■ ESD protection ■ In compliance with the 2002/95/EC european directive M243 Epoxy sealed Description The PD85035C is a common source N-channel, enhancement-mode lateral FieldEffect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology. PD85035C’s superior linearity performance makes it an ideal solution for car mobile radio. Figure 1. Pin connection 1 3 2 1. Drain 2. Gate 3. Source Table 1. July 2009 Device summary Part number Package Packaging PD85035C M243 Box Doc ID14138 Rev 2 1/11 www.st.com 11 Contents PD85035C Contents 1 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.3 ESD protection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 Doc ID14138 Rev 2 PD85035C Electrical data 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (TCASE = 25 °C) Symbol Value Unit V(BR)DSS Drain-source voltage 40 V VGS Gate-source voltage -0.5 to +15 V 8 A Power dissipation (@ TC = 70 °C) 108 W Max. operating junction temperature 200 °C -65 to +150 °C Value Unit 1.2 °C/W ID PDISS TJ TSTG 1.2 Parameter Drain current Storage temperature Thermal data Table 3. Symbol RthJC Thermal data Parameter Junction - case thermal resistance Doc ID14138 Rev 2 3/11 Electrical characteristics 2 PD85035C Electrical characteristics TCASE = +25 oC 2.1 Static Table 4. Static Symbol 2.2 Test conditions Min Unit VGS = 0 V VDS = 25 V 1 µA IGSS VGS = 20 V VDS = 0 V 1 µA VGS(Q) VDS = 10 V ID = 350 mA 3.9 VDS(ON) VGS = 10 V ID = 3 A 0.64 CISS VGS = 0 V VDS = 12.5 V f = 1 MHz 76 pF COSS VGS = 0 V VDS = 12.5 V f = 1 MHz 45 pF CRSS VGS = 0 V VDS = 12.5 V f = 1 MHz 1.4 pF V 0.7 V Dynamic Symbol P3dB Dynamic Test conditions VDD = 13.6 V, IDQ = 350 mA Min Typ f = 945 MHz 35 GP VDD = 13.6 V, IDQ = 350 mA, POUT = 15 W, f = 945 MHz 15 17.5 hD VDD = 13.6 V, IDQ = 350 mA, POUT = P3dB, f = 945 MHz 60 77 Load VDD = 17 V, IDQ = 350 mA, POUT = 50 W, f = 945 MHz mismatch All phase angles Max - dB % 20:1 VSWR ESD protection characteristics Test conditions Class Human body model 2 Machine model M3 Doc ID14138 Rev 2 Unit W ESD protection characteristics Table 6. 4/11 Max IDSS Table 5. 2.3 Typ PD85035C 3 Impedance Impedance Figure 2. Current conventions Table 7. Impedance data Frequency (MHz) ZIN (Ω) ZDL(Ω) 945 MHz 1.08 +j 2.05 2.14 + j 2.17 Doc ID14138 Rev 2 5/11 Typical performances PD85035C 4 Typical performances Figure 3. Capacitances vs drain voltage p Figure 4. ID vs VGS Figure 6. DC output characteristic g 160 Crss Ciss Coss Capacitances (pF) 140 120 Freq = 1 MHz 100 80 60 40 20 0 0 10 20 30 40 50 Vdd (V) Figure 5. Threshold voltage g 6/11 Doc ID14138 Rev 2 PD85035C Typical performances Gain vs output power and bias current 24 y 18 16 Freq = 945 MHz Vdd = 13.6V 12 Nd 45 90 40 80 35 70 30 60 25 50 20 40 30 Freq = 945 MHz Vdd = 13.6V Idq = 350mA 10 5 0 10 0 5 10 15 20 25 30 35 40 45 0.0 50 0.5 1.0 Pout and drain current vs supply voltage 6 2.5 0 3.0 50 5 Freq = 945 MHz Pin = 0.4W Vdd = 13.6V Idq = 350mA 45 5 4 30 3 20 2 35 Pout (W) 40 40 4 30 3 Id (A) Id Id (A) Pout 2.0 10 Figure 10. Pout and drain current vs gate voltage pp y 60 50 1.5 20 Pin (W) Pout (W) Figure 9. p 100 15 14 Pout (W) p Pout Pout (W) 20 Pout and efficiency vs input power 50 150mA 250mA 350mA 500mA 22 Gain (dB) Figure 8. Nd (%) Figure 7. 25 20 2 15 Freq = 945 MHz Pin = 1.2W Idq = 350mA 10 0 1 10 13 16 19 1 5 0 7 10 Pout Id 0 0 0 Vdd (V) 1 2 3 4 5 6 Vgs (V) Doc ID14138 Rev 2 7/11 Package mechanical data 5 PD85035C Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 8/11 Doc ID14138 Rev 2 PD85035C Package mechanical data Table 8. M243 (.230 x .360 2L N/HERM W/FLG) mechanical data Dim. mm Min Typ Inch Max Min Typ Max A 5.21 5.72 0.205 0.225 B 5.46 6.48 0.215 0.255 C 5.59 6.10 0.220 0.240 D 14.27 0.562 E 20.07 20.57 0.790 0.810 F 8.89 9.40 0.350 0.370 G 0.10 0.15 0.004 0.006 H 3.18 4.45 0.125 0.175 I 1.83 2.24 0.072 0.088 J 1.27 1.78 0.050 0.070 Figure 11. Package dimensions Controlling dimension: Inches Doc ID14138 Rev 2 1022142E 9/11 Revision history 6 PD85035C Revision history Table 9. 10/11 Document revision history Date Revision Changes 16-Nov-2007 1 Initial release 02-Jul-2009 2 Document status promoted from preliminary data to datasheet Doc ID14138 Rev 2 PD85035C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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