SCT30N120 Silicon carbide Power MOSFET: 45 A, 1200 V, 90 mΩ (typ., TJ=150 °C), N-channel in HiP247™ Datasheet - production data Features • Very tight variation of on-resistance vs. temperature • Slight variation of switching losses vs. temperature 2 • Very high operating temperature capability (200 °C) 3 1 • Very fast and robust intrinsic body diode • Low capacitance HiP247™ • Easy to drive Figure 1. Internal schematic diagram ' Applications • Solar inverters, UPS • Motor drives • High voltage DC-DC converters • Switch mode power supply Description * 6 $0Y This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Table 1. Device summary Note: Order code Marking Package Packaging SCT30N120 SCT30N120 HiP247™ Tube The device meets ECOPACK standards, an environmentally-friendly grade of products commonly referred to as “halogen-free”. See Section 3: Package mechanical data. February 2015 This is information on a product in full production. DocID023109 Rev 9 1/13 www.st.com 13 Contents SCT30N120 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 DocID023109 Rev 9 SCT30N120 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 1200 V VGS Gate-source voltage -10/+25 V ID Drain current (continuous) at TC = 25 °C (limited by die) 45 A ID Drain current (continuous) at TC = 25 °C (limited by package) 40 A ID Drain current (continuous) at TC = 100 °C 34 A IDM (1) Drain current (pulsed) 90 A PTOT Total dissipation at TC = 25 °C 270 W Tstg Tj Storage temperature °C -55 to 200 Operating junction temperature °C 1. Pulse width limited by safe operating area. Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max DocID023109 Rev 9 Value Unit 0.65 °C/W 40 °C/W 3/13 Electrical characteristics 2 SCT30N120 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4. On/off states Symbol Parameter Test conditions IDSS Zero gate voltage drain current (VGS = 0) VDS = 1200 V VDS = 1200 V, TJ = 200 °C IGSS Gate-body leakage current (VDS = 0) VGS = +22 / -10 V Gate threshold voltage VDS = VGS, ID = 1 mA VGS(th) RDS(on) Static drain-source on- resistance Min. 1.8 Typ. Max. Unit 1 50 100 µA µA 100 nA 3.5 V VGS = 20 V, ID = 20 A 80 VGS = 20 V, ID = 20 A, TJ = 150 °C 90 mΩ VGS = 20 V, ID = 20 A, TJ = 200 °C 100 mΩ 100 mΩ Table 5. Dynamic Symbol 4/13 Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate input resistance Test conditions VDS = 400 V, f = 1 MHz, VGS = 0 Min. Typ. Max. Unit - 1700 - pF - 130 - pF - 25 - pF - 105 - nC VDD = 800 V, ID = 20 A, VGS = 0 / 20 V - 16 - nC - 40 - nC f=1 MHz open drain - 5 - Ω DocID023109 Rev 9 SCT30N120 Electrical characteristics Table 6. Switching energy (inductive load) Symbol Parameter Test conditions Eon Turn-on switching losses Eoff Turn-off switching losses Eon Turn-on switching losses Eoff Turn-off switching losses Min. Typ. - 500 - µJ - 350 - µJ - 500 - µJ - 400 - µJ VDD = 800 V, ID = 20 A RG= 6.8 Ω, VGS = -2/20 V VDD = 800 V, ID = 20 A RG= 6.8 Ω, VGS = -2/20 V TJ= 150 °C Max. Unit Table 7. Switching times Symbol td(on)V tf(V) td(off)V tr(V) Parameter Test conditions Turn-on delay time Fall time VDD = 800 V, ID = 20 A, RG = 0 Ω, VGS = 0/20 V Turn-off delay time Rise time Min. Typ. Max. Unit - 19 - ns - 28 - ns - 45 - ns - 20 - ns Table 8. Reverse SiC diode characteristics Symbol Parameter VSD Diode forward voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Test conditions IF = 10 A, VGS = 0 ISD = 20 A, di/dt = 100 A/µs VDD = 800 V DocID023109 Rev 9 Min Typ. Max Unit - 3.5 - V - 140 - 140 - nC - 2 - A ns 5/13 Electrical characteristics 2.1 SCT30N120 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM17527v1 ID (A) AM17526v1 ) (on 0.5 DS Op Lim erati ite on i db nt y m his ax are a R is K 10 0.4 100μs 0.3 1ms 0.2 1 10ms Single pulse 0.1 Single pulse 0.1 0.1 10 1 100 VDS(V) 1000 Figure 4. Output characteristics (TJ=25°C) AM17518v1 ID (A) VGS=20V 0 -6 10 10 -5 -4 10 -3 10 -2 10 -1 tp (s) Figure 5. Output characteristics (TJ=150°C) *,3')65 ,' $ 18V 9 9*6 9 70 10 9 60 9 16V 50 40 30 14V 20 10 0 0 2 4 6 8 12V 10V 12 VDS(V) 10 Figure 6. Output characteristics (TJ=200°C) GIPD180220151506FSR ID (A) 18V 70 9 9'69 Figure 7. Transfer characteristics AM17521v1 ID (A) 55 VDS=12V 25°C 45 40 14V 50 35 30 40 12V 30 150°C 25 20 20 200°C 15 10V 10 6/13 50 16V VGS=20V 60 0 0 9 2 4 6 8 10 12 VDS(V) 10 5 0 DocID023109 Rev 9 0 2 4 6 8 10 12 14 16 18 VGS(V) SCT30N120 Electrical characteristics Figure 8. Power dissipation Figure 9. Gate charge vs gate-source voltage AM17525v1 PD (W) TJ=200°C 250 AM17529v1 VGS (V) VDD=800V ID=20A 16 200 12 150 8 100 4 50 0 -50 0 50 100 0 TC(°C) 150 Figure 10. Capacitance variations 40 20 0 60 80 100 Figure 11. Switching energy vs. drain current AM17528v1 C (pF) Qg(nC) AM17530v1 E (μJ) Ciss Etot VGS=-2V/20V TJ=25°C , RG=6.8Ω VDD=VCLAMP=800V 800 f= 1MHz 700 600 1000 Eon 500 400 Coss Eoff 300 100 200 Crss 10 0 200 400 600 800 0 0 VDS(V) Figure 12. Switching energy vs. junction temperature AM17531v1 E (μJ) 1100 1000 100 2 4 6 8 10 12 14 16 18 ID(A) Figure 13. Normalized V(BR)DSS vs. temperature AM17523v1 V(BR)DSS (norm) 1.04 VGS=-2V/20V ID=20V , RG=6.8Ω VDD=VCLAMP=800V Etot 900 800 700 ID=1mA 1.02 1.00 600 500 Eon 400 Eoff 0.98 300 0.96 200 100 0 25 0.94 50 75 100 125 TJ(°C) DocID023109 Rev 9 -50 0 50 100 150 TJ(°C) 7/13 Electrical characteristics SCT30N120 Figure 14. Normalized gate threshold voltage vs. temperature AM17522v1 VGS(th) (norm) 1.6 ID=1mA Figure 15. Normalized on-resistance vs. temperature AM17520v1 RDS(on) (norm) VGS=20V 3.2 1.4 2.8 1.2 2.4 1.0 2.0 0.8 1.6 0.6 1.2 0.4 0.8 0.2 0.4 0 25 0 -50 0 50 100 TJ(°C) 150 Figure 16. Body diode characteristics (TJ=-50°C) 9'6 9 75 50 100 125 175 TJ(°C) 150 Figure 17. Body diode characteristics (TJ=25°C) VDS (V) -6 -5 -3 -4 -2 9*6 9 -1 0 0 VGS=0V 9*6 9 -5 VGS=-5V 9*6 9 VGS=-2V -10 -15 ,'6$ Figure 18. Body diode characteristics (TJ=150°C) 9'6 9 IDS(A) AM17524v1 Figure 19. 3rd quadrant characteristics (TJ=-50°C) 9'6 9 9*6 9 9*6 9 9*6 9 9*6 9 9 9 9 8/13 ,'6$ 9 DocID023109 Rev 9 ,'$ SCT30N120 Electrical characteristics Figure 20. 3rd quadrant characteristics (TJ=25°C) 9'6 9 Figure 21. 3rd quadrant characteristics (TJ=150°C) 9'6 9 9 9 9*6 9 9 9 9*6 9 9 9 9 9 ,'$ DocID023109 Rev 9 ,'$ 9/13 Package mechanical data 3 SCT30N120 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 22. HiP247™ outline 8396756_A 10/13 DocID023109 Rev 9 SCT30N120 Package mechanical data Table 9. HiP247™ mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID023109 Rev 9 5.70 11/13 Revision history 4 SCT30N120 Revision history Table 10. Document revision history 12/13 Date Revision Changes 10-May-2012 1 First release 21-May-2013 2 Updated trr value in Table 8. Updated dynamic parameters in Table 5, VGS(th) in Table 4 and Eon in Table 6. 24-Jun-2013 3 Document status promoted from target to preliminary data. Added: Section 2.1: Electrical characteristics (curves) 11-Jul-2013 4 Updated Figure 6: Output characteristics (TJ=200°C) and Figure 7: Transfer characteristics. 18-Dec-2013 5 Updated parameters in Table 2: Absolute maximum ratings and Table 4: On/off states. 27-May-2014 6 Added Table 7: Switching times. Updated Section 3: Package mechanical data. Minor text changes. 25-Sep-2014 7 Document status promoted from preliminary to production data. 17-Feb-2015 8 Updated title in cover page. 20-Feb-2015 9 Updated Section 2.1: Electrical characteristics (curves). DocID023109 Rev 9 SCT30N120 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID023109 Rev 9 13/13