STL13N60M2 N-channel 600 V, 0.39 Ω typ., 7 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet − production data Features Order code VDS @ TJmax RDS(on) max ID STL13N60M2 650 V 0.42 Ω 7A • Extremely low gate charge • Lower RDS(on) x area vs previous generation 1 2 • Low gate input resistance 3 4 • 100% avalanche tested • Zener-protected PowerFLAT™ 5x6 HV Applications • Switching applications Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 7 5 6 Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. G(4) 1 S(1, 2, 3) 2 3 4 Top View AM15540v2 Table 1. Device summary Order code Marking Package Packaging STL13N60M2 13N60M2 PowerFLAT™ 5x6 HV Tape and reel June 2014 This is information on a product in full production. DocID026363 Rev 2 1/16 www.st.com Contents STL13N60M2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 8 DocID026363 Rev 2 STL13N60M2 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VGS Parameter Gate-source voltage Value Unit ± 25 V (1) A ID Drain current (continuous) at TC = 25 °C 7 ID Drain current (continuous) at TC = 100 °C 4.7 A IDM (2) Drain current (pulsed) 28 A PTOT Total dissipation at TC = 25 °C 55 W Peak diode recovery voltage slope 15 V/ns MOSFET dv/dt ruggedness 50 V/ns dv/dt (3) dv/dt(4) Tstg Storage temperature - 55 to 150 °C Tj Max. operating junction temperature 150 1. The value is rated according to Rthj-case and limited by package 2. Pulse width limited by safe operating area. 3. ISD ≤ 7 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V. 4. VDS ≤ 480 V Table 3. Thermal data Symbol Rthj-case Rthj-pcb Parameter Thermal resistance junction-case max Thermal resistance junction-pcb max(1) Value Unit 2.27 °C/W 59 °C/W Value Unit 1. When mounted on 1 inch² FR-4, 2 Oz copper board Table 4. Avalanche characteristics Symbol Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 2.8 A EAS Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50) 125 mJ DocID026363 Rev 2 3/16 16 Electrical characteristics 2 STL13N60M2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS IDSS IGSS Parameter Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current Test conditions VGS = 0, ID = 1 mA Min. Typ. Max. Unit 600 V VGS = 0, VDS = 600 V 1 μA VGS = 0, VDS = 600 V, TC=125 °C 100 μA VDS = 0, VGS = ± 25 V ±10 μA 3 4 V 0.39 0.42 Ω Min. Typ. Max. Unit - 580 - pF - 32 - pF - 1.1 - pF VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on) Static drain-source on-resistance 2 VGS = 10 V, ID = 4.5 A Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VGS = 0, VDS = 0 to 480 V - 120 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 6.6 - Ω Qg Total gate charge - 17 - nC - 2.5 - nC - 9 - nC Qgs Gate-source charge Qgd Gate-drain charge VGS = 0, VDS = 100 V, f = 1 MHz, VDD = 480 V, ID = 11 A, VGS = 10 V (see Figure 15) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/16 DocID026363 Rev 2 STL13N60M2 Electrical characteristics Table 7. Switching times Symbol td(on) Parameter Test conditions Turn-on delay time VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14 and 19) Rise time tr td(off) tf Turn-off delay time Fall time Min. Typ. Max. Unit - 11 - ns - 10 - ns - 41 - ns - 9.5 - ns Min. Typ. Table 8. Source drain diode Symbol Parameter Test conditions Max. Unit Source-drain current - 7 A ISDM (1) Source-drain current (pulsed) - 28 A VSD (2) Forward on voltage - 1.6 V ISD trr VGS = 0, ISD = 7 A Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 11 A, di/dt = 100 A/μs VDD = 60 V (see Figure 16) ISD = 11 A, di/dt = 100 A/μs VDD = 60 V, Tj=150 °C (see Figure 16) - 297 ns - 2.8 μC - 18.5 A - 394 ns - 3.8 μC - 19 A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID026363 Rev 2 5/16 16 Electrical characteristics 2.1 STL13N60M2 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance GIPG130520141013SA ID (A) ZthPowerFlat_5x6_19 K δ=0.5 0.2 on ) 10µs D S( O Li per m at ite io d ni by n m this ax a R rea is 10 1 0.1 10 -1 0.05 0.02 0.01 100µs 1ms 10ms 10 -2 Single pulse 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 1 VDS(V) 100 10 Figure 4. Output characteristics 10 -3 10-6 10-5 10-4 10 -2 10-3 10 -1 10 tp(s) Figure 5. Transfer characteristics AM15712v1 ID (A) AM15713v1 ID (A) VGS=7, 8, 9, 10V 20 20 VDS=18V 6V 16 16 12 12 5V 8 8 4 4 4V 0 0 4 12 8 16 Figure 6. Normalized VBR(DSS) vs temperature AM15714v1 VBR(DSS) (norm) 0 0 VDS(V) ID=1 mA 1.1 2 4 8 6 VGS(V) Figure 7. Static drain-source on-resistance AM15912v1 RDS(on) (Ω) 0.415 VGS=10V 0.410 0.405 1.06 0.400 1.02 0.395 0.390 0.98 0.385 0.94 0.380 0.9 -50 6/16 0 50 100 TJ(°C) 0.375 0 DocID026363 Rev 2 2 4 6 8 10 ID(A) STL13N60M2 Electrical characteristics Figure 8. Gate charge vs gate-source voltage AM15716v1 VDS VGS (V) 10 (V) VDD=480V ID=11A VDS 500 Figure 9. Capacitance variations AM15717v1 C (pF) 1000 Ciss 400 8 100 300 6 Coss 10 4 200 2 100 0 0 8 4 12 0 Qg(nC) 16 Figure 10. Normalized gate threshold voltage vs temperature AM15718v1 VGS(th) (norm) 1.1 ID=250µA 1 Crss 0.1 0.1 1 100 10 VDS(V) Figure 11. Normalized on-resistance vs temperature AM15916v1 RDS(on) (norm) ID= 4.5 A VGS= 10 V 2.3 2.1 1.0 1.9 1.7 0.9 1.5 1.3 0.8 1.1 0.9 0.7 0.7 0.6 -50 100 50 0 TJ(°C) Figure 12. Source-drain diode forward characteristics AM15720v1 VSD (V) 0.5 -50 -25 0 25 50 75 100 TJ(°C) Figure 13. Output capacitance stored energy AM15721v1 Eoss(µJ) TJ=-50°C 1 4 TJ=25°C 0.9 3 0.8 2 0.7 TJ=150°C 1 0.6 0.5 0 2 4 6 8 10 ISD(A) DocID026363 Rev 2 0 0 100 200 300 400 500 VDS(V) 7/16 16 Test circuits 3 STL13N60M2 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 16. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 17. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform ton 9%5'66 tdon 9' toff tr tdoff tf 90% 90% ,'0 10% ,' 9'' 10% 0 9'' VDS 90% VGS $0Y 8/16 0 DocID026363 Rev 2 10% AM01473v1 STL13N60M2 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID026363 Rev 2 9/16 16 Package mechanical data STL13N60M2 Figure 20. PowerFLAT™ 5x6 HV drawing 8368143_Rev_B 10/16 DocID026363 Rev 2 STL13N60M2 Package mechanical data Figure 21. PowerFLAT™ 5x6 HV recommended footprint (dimensions are in mm) 8368143_Rev_B_footprint DocID026363 Rev 2 11/16 16 Package mechanical data STL13N60M2 Table 9. PowerFLAT™ 5x6 HV mechanical data mm Dim. Min. Typ. A 0.80 1.00 A1 0.02 0.05 A2 0.25 b 0.30 0.50 D 5.00 5.20 5.40 E 5.95 6.15 6.35 D2 4.30 4.40 4.50 E2 3.10 3.20 3.30 e 12/16 Max. 1.27 L 0.50 0.55 0.60 K 1.90 2.00 2.10 DocID026363 Rev 2 STL13N60M2 Packaging mechanical data Figure 22. PowerFLAT™ 5x6 tape(a) P0 4.0±0.1 (II) P2 2.0±0.1 (I) T (0.30 ±0.05) E1 1.75±0.1 Y 0. 20 Do Ø1.55±0.05 W(12.00±0.3) R F(5.50±0.1)(III) C L EF D1 Ø1.5 MIN. Bo (5.30±0.1) 5 Packaging mechanical data REF .R0 .50 Y P1(8.00±0.1) Ao(6.30±0.1) Ko (1.20±0.1) SECTION Y-Y (I) Measured from centerline of sprocket hole to centerline of pocket. Base and bulk quantity 3000 pcs (II) Cumulative tolerance of 10 sprocket holes is ± 0.20 . (III) Measured from centerline of sprocket hole to centerline of pocket. 8234350_Tape_rev_C Figure 23. PowerFLAT™ 5x6 package orientation in carrier tape. Pin 1 identification a. All dimensions are in millimeters. DocID026363 Rev 2 13/16 16 Packaging mechanical data STL13N60M2 Figure 24. PowerFLAT™ 5x6 reel R0.60 W3 11.9/15.4 PART NO. 1.90 2.50 R25.00 ØN 178(±2.0) ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES W2 18.4 (max) A 330 (+0/-4.0) 4.00 2.50 77 ESD LOGO W1 12.4 (+2/-0) 06 PS ØA 128 2.20 R1.10 Ø21.2 All dimensions are in millimeters 13.00 CORE DETAIL 8234350_Reel_rev_C 14/16 DocID026363 Rev 2 STL13N60M2 6 Revision history Revision history Table 10. Document revision history Date Revision Changes 15-May-2014 1 First release. 27-Jun-2014 2 – Updated: Figure 3 – Minor text changes DocID026363 Rev 2 15/16 16 STL13N60M2 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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