T1210T-8T 12 A logic level Triac Datasheet − production data Description $ Available in through-hole package, the T1210T-8T Triac can be used for the on/off or phase angle control function in general purpose AC switching. This device can be directly driven by a microcontroller due to its 10 mA gate current requirement. * Table 1. Device summary $ $ Symbol Value Unit IT(rms) 12 A VDRM, V RRM 800 V VDSM, V RSM 900 V IGT 10 mA * $ $ 72$% Features • Medium current Triac • Three quadrants • ECOPACK®2 compliant component Applications • General purpose AC line load switching • Motor control circuits • Small home appliances • Lighting • Inrush current limiting circuits • Overvoltage crowbar protection November 2014 This is information on a product in full production. DocID026311 Rev 1 1/9 www.st.com 9 Characteristics 1 T1210T-8T Characteristics Table 2. Absolute ratings (limiting values, Tj = 25 °C unless otherwise stated) Symbol IT(rms) ITSM I ²t Parameter Value Unit A On-state rms current (full sine wave) Tc = 131 °C 12 Non repetitive surge peak on-state f = 50 Hz current (full cycle, Tj initial = 25 °C) f = 60 Hz t = 20 ms 90 t = 16.7 ms 95 I²t value for fusing, Tj initial = 25 °C tp = 10 ms 54 Tj = 150 °C 600 Tj = 125 °C 800 A A ²s VDRM, VRRM Repetitive surge peak off-state voltage VDSM, VRSM Non repetitive surge peak off-state voltage tp = 10 ms 900 V dI/dt Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns F = 100 Hz 100 A/µs IGM Peak gate current Tj = 150 °C 4 A Tj = 150 °C 1 W - 40 to + 150 - 40 to + 150 °C 260 °C PG(AV) tp = 20 µs Average gate power dissipation Tstg Tj Storage junction temperature range Operating junction temperature range TL Maximum lead temperature for soldering during 10 s V Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test conditions Quadrant Value Min. 0.5 Max. 10 I - II - III Max. 1.3 V I - II - III Min. 0.2 V Max. 15 mA IGT VD = 12 V, RL = 30 Ω I - II - III VGT VD = 12 V, RL = 30 Ω VGD VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C IH (1) IT = 500 mA IL IG = 1.2 IGT mA I - III dV/dt(1) (dI/dt)c(1) 20 Max. II VD = VR = 536 V, gate open Tj = 125 °C VD = VR = 402 V, gate open Tj = 150 °C Tj = 125 °C (dV/dt)c = 0.1 V/µs Tj = 125 °C (dV/dt)c = 10 V/µs Tj = 150 °C 1. For both polarities of A2 referenced to A1 2/9 DocID026311 Rev 1 mA 25 250 V/µs 170 V/µs Min. 11.7 Min. Tj = 150 °C (dI/dt)c(1) Unit A/ms 8.2 6 Min. A/ms 2.7 T1210T-8T Characteristics Table 4. Static characteristics Symbol Test conditions VT (1) Value Unit ITM = 17 A, tp = 380 µs Tj = 25 °C Max. 1.55 V Vt0 (1) Threshold voltage Tj = 150 °C Max. 0.85 V Rd (1) Dynamic resistance Tj = 150 °C Max. 37 mΩ 7.5 µA Tj = 25 °C VDRM = VRRM = 800 V IDRM IRRM Max. Tj = 125 °C VDRM = VRRM = 600 V 1 mA Tj = 150 °C Max. 2.7 1. For both polarities of A2 referenced to A1 Table 5. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 1.3 °C/W Rth(j-a) Junction to ambient (DC) 60 °C/W Figure 1. Maximum power dissipation versus on-state rms current Figure 2. On-state rms current versus case temperature 3: D q D q , 506$ 7 Į Į ,7 506 Figure 3. On-state rms current versus ambient temperature (free air convection) 7F& $ ,7506$ Figure 4. Relative variation of thermal impedance versus pulse duration ( . >= 5 @ WK WK =WKMF =WKMD ( 7 & D W3V ( ( DocID026311 Rev 1 ( ( ( ( ( ( ( 3/9 Characteristics T1210T-8T Figure 5. On-state characteristics (maximum values) Figure 6. Surge peak on-state current versus number of cycles ,70$ ,760$ 1RQUHSHWLWLYH7MLQLWLDO & 7MPD[ 9WR 9 5G Pȍ PV 2QHF\FOH 5HSHWLWLYH7 & F 7M & 7M & 9709 Figure 7. Non repetitive surge peak on-state current 1XPEHURIF\FOHV Figure 8. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values) ,*7 9*7>7M@,*7 9*7>7M &@ ,760$ 7MLQLWLDO & GOGWOLPLWDWLRQ$V ,*74 ,760 , 44 *7 9*7 7 & M 7SPV Figure 9. Relative variation of critical rate of decrease of main current versus junction temperature (typical values) G,GWF>7M@G,GWF>7M &@ Figure 10. Relative variation of holding current and latching current versus junction temperature (typical values) ,+,/ >7M@,+,/ >7M &@ G9GWF 9V , / , + 4/9 7 & 7M& DocID026311 Rev 1 M T1210T-8T Characteristics Figure 11. Relative variation of critical rate of decrease of main current (dI/dt)C versus reapplied (dV/dt)C (maximum values) G,GWF>G9GWF@VSHFLILHGG,GWF Figure 12. Relative variation of static dV/dt immunity versus junction temperature (typical values) G9GW>7M@G9GW>7M &@ 9' 95 9& 7M & 7M & G9GWF9V 7M& Figure 13. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values) ,'50,550>7M9'509550@,'50,550 ( 9 '50 ( 9 '50 9 9 550 9 9 550 ( 9 9 9 '50 550 ( >7 &9@ M >7 &9@ M 7M& ( DocID026311 Rev 1 5/9 Package information 2 T1210T-8T Package information • Epoxy meets UL94, V0 • Lead-free package • Recommended torque: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 14. TO-220AB dimension definitions A E ∅P Resin gate 0.5 mm max. protrusion(1) F Q H1 D D1 L30 L20 b1 J1 L1 L b e e1 Resin gate 0.5 mm max. protrusion(1) (1) Resin gate position accepted in each of the two position shown as well as the symmetrical opposites 6/9 DocID026311 Rev 1 c T1210T-8T Package information Table 6. TO-220AB dimension values Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.17 0.18 b 0.61 0.88 0.024 0.035 b1 1.14 1.70 0.045 0.067 c 0.48 0.70 0.019 0.027 D 15.25 15.75 0.60 0.62 D1 1.27 typ. 0.05 typ. E 10 10.40 0.39 0.41 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.19 0.20 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.24 0.26 J1 2.40 2.72 0.094 0.107 L 13 14 0.51 0.55 L1 3.50 3.93 0.137 0.154 L20 16.40 typ. 0.64 typ. L30 28.90 typ. 1.13 typ. ∅P 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 DocID026311 Rev 1 7/9 Ordering information 3 T1210T-8T Ordering information Figure 15. Ordering information scheme 7 77 7ULDF &XUUHQW $ *DWHVHQVLWLYLW\ P$ 6SHFLILFDSSOLFDWLRQ 7 ,QFUHDVHGG,GWFDQGG9GWSURGXFLQJUHGXFHG,760 9ROWDJH 9 3DFNDJH 7 72$% Table 7. Ordering information 4 Order code Marking Package Weight Base qty Delivery mode T1210T-8T T1210T-8T TO-220AB 2.0 g 50 Tube Revision history Table 8. Document revision history 8/9 Date Revision 07-Nov-2014 1 Changes Initial release. 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All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved DocID026311 Rev 1 9/9