STFI13NM60N - STMicroelectronics

STFI13NM60N
N-channel 600 V, 0.28 Ω, 11 A MDmesh™ II Power MOSFET
in I²PAKFP package
Datasheet — production data
Features
Type
VDSS
(@Tjmax)
STFI13NM60N
650 V
RDS(on)
max
PTOT
ID
< 0.36 Ω 11 A
25 W
■
Fully insulated and low profile package with
increased creepage path from pin to heatsink
plate
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
1
2
3
I²PAKFP
(TO-281)
Applications
■
Switching applications
Description
Figure 1.
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Internal schematic diagram
$
'
3
3#
Table 1.
Device summary
Order codes
Marking
Packages
Packaging
STFI13NM60N
13NM60N
I2PAKFP
(TO-281)
Tube
May 2012
This is information on a product in full production.
Doc ID 018960 Rev 4
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www.st.com
12
Contents
STFI13NM60N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
.............................................. 8
Doc ID 018960 Rev 4
STFI13NM60N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
600
V
VGS
Gate-source voltage
± 25
V
(1)
A
ID
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM
(2)
PTOT
dv/dt
(3)
Drain current (pulsed)
6.93 (1)
44
(1)
A
A
Total dissipation at TC = 25 °C
25
W
Peak diode recovery voltage slope
15
V/ns
2500
V
- 55 to 150
°C
150
°C
Value
Unit
5
°C/W
62.5
°C/W
Value
Unit
3.5(1)
A
200
mJ
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t=1 s;TC=25 °C)
Tstg
Storage temperature
Tj
11
Max. operating junction temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 11 A, di/dt ≤ 400 A/µs, VDSpeak ≤V(BR)DSS, VDD = 80% V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
Table 4.
Symbol
Avalanche characteristics
Parameter
IAS
Repetitive or non repetitive avalanche current
EAS
Single pulse avalanche energy
(starting TJ=25 °C, ID=IAS, VDD=50 V)
1. Limited by maximum junction temperature.
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Electrical characteristics
2
STFI13NM60N
Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source
breakdown voltage (VGS = 0)
ID = 1 mA
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 600 V
VDS = 600 V, Tc = 125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
±0.1
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 5.5 A
0.28
0.36
Ω
V(BR)DSS
Table 6.
Symbol
600
2
V
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
-
pF
pF
pF
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-
790
60
3.6
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
-
135
-
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 11 A,
VGS = 10 V,
(see Figure 14)
-
30
4
15
-
nC
nC
nC
RG
Gate input resistance
f=1 MHz, ID = 0
3
4.7
6
Ω
Ciss
Coss
Crss
Coss eq. (1)
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
Table 7.
Symbol
td(on)
tr
td(off)
tf
4/12
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300 V, ID = 5.5 A
RG = 4.7 Ω VGS = 10 V
(see Figure 13)
Doc ID 018960 Rev 4
Min.
Typ.
-
3
8
30
10
Max. Unit
-
ns
ns
ns
ns
STFI13NM60N
Electrical characteristics
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min
Typ.
Max
Unit
-
11
44
A
A
1.5
V
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
ISD = 11 A, VGS = 0
-
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 9 A, di/dt = 100 A/µs
VDD = 100 V
(see Figure 15)
-
230
2
18
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 9 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 15)
-
290
190
17
ns
µC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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Electrical characteristics
STFI13NM60N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 5.
Transfer characteristics
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ON
/
P
,I ERA
M
ITE TION
D IN
BY
M THIS
AX A
2 RE
A
$
3
IS
—S
—S
MS
4J #
4C #
MS
3INGLE
PULSE
Figure 4.
ID
(A)
Output characteristics
AM03300v1
VGS=10V
22
20
18
16
14
12
10
8
6
4
2
0
0
Figure 6.
6$36
5V
4V
10
15
20
25
VDS(V)
Normalized VDS vs temperature
AM09028v1
VDS
(norm)
ID=1mA
1.10
VDS=20V
22
20
6V
5
AM03301v1
ID
(A)
18
16
14
12
10
8
6
4
2
0
0
Figure 7.
2
1.06
8
6
10 VGS(V)
Static drain-source on resistance
AM03302v1
RDS(on)
(Ω)
0.30
1.08
4
VGS=10V
0.28
1.04
1.02
0.26
1.00
0.24
0.98
0.96
0.94
0.92
-50 -25
6/12
0.22
0
25
50
75 100
TJ(°C)
0.2
0
Doc ID 018960 Rev 4
2
4
6
8
10
ID(A)
STFI13NM60N
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
AM03305v1
VGS
(V)
VDS(V)
VDD=480V
12
AM03304v1
C
(pF)
500
ID=11A
VDS
Capacitance variations
1000
10
Ciss
400
8
300
100
6
Coss
200
4
10
100
2
0
20
10
0
30
1
0.1
0
Qg(nC)
Figure 10. Normalized gate threshold voltage
vs temperature
AM03306v1
VGS(th)
(norm)
1.10
Crss
1
10
100
VDS(V)
Figure 11. Normalized on resistance vs
temperature
AM03307v1
RDS(on)
(norm)
2.1
ID=250µA
1.9
ID=5.5A
VGS=10V
1.7
1.00
1.5
1.3
0.90
1.1
0.80
0.9
0.70
-50 -25
0.5
-50 -25
0.7
0
25
50
75 100
TJ(°C)
0
25
50
75 100
TJ(°C)
Figure 12. Source-drain diode forward
characteristics
AM09290v1
VSD
(V)
TJ=-50°C
TJ=25°C
1.2
1.0
TJ=150°C
0.8
0.6
0.4
0
2
4
6
8
10 ISD(A)
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Test circuits
3
STFI13NM60N
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
Figure 16. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 17. Unclamped inductive waveform
AM01471v1
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/12
0
Doc ID 018960 Rev 4
10%
AM01473v1
STFI13NM60N
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Doc ID 018960 Rev 4
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Package mechanical data
Table 9.
STFI13NM60N
I2PAKFP (TO-281) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
B
2.50
2.70
D
2.50
2.75
D1
0.65
0.85
E
0.45
0.70
F
0.75
1.00
F1
1.20
G
4.95
H
10.00
10.40
L1
21.00
23.00
L2
13.20
14.10
L3
10.55
10.85
L4
2.70
3.20
L5
0.85
1.25
L6
7.30
7.50
-
5.20
Figure 19. I2PAKFP (TO-281) drawing
8291506 rev.A
10/12
Doc ID 018960 Rev 4
STFI13NM60N
5
Revision history
Revision history
Table 10.
Document revision history
Date
Revision
Changes
21-Jun-2011
1
First release.
03-Nov-2011
2
Figure 2: Safe operating area and Figure 3: Thermal
impedance have been added.
20-Mar-2012
3
Document status promoted from preliminary data to production
data.
Package name has been updated.
15-May-2012
4
RG values have been modified in Table 6: Dynamic
Doc ID 018960 Rev 4
11/12
STFI13NM60N
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