STFI260N6F6 N-channel 60 V, 0.0024 Ω, 80 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAKFP package Datasheet — preliminary data Features Order codes VDSS RDS(on) max ID STFI260N6F6 60 V < 0.003 Ω 80 A ■ Fully insulated and low profile package with increased creepage path from pin to heatsink plate ■ Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness 1 2 3 I²PAKFP (TO-281) Application ■ Switching applications Figure 1. Internal schematic diagram Description $ This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging STFI260N6F6 260N6F6 I²PAK (TO-281) Tube April 2012 Doc ID 023096 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/12 www.st.com 12 Contents STFI260N6F6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 Doc ID 023096 Rev 1 STFI260N6F6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ± 20 V (1) A ID Drain current (continuous) at TC = 25 °C 80 ID Drain current (continuous) at TC = 100 °C 80(1) A Drain current (pulsed) 320 A Total dissipation at TC = 25 °C 41.7 W Derating factor 0.28 W/°C - 55 to 175 °C Value Unit Thermal resistance junction-case max 3.6 °C/W Rthj-a Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C IDM (1) PTOT Tstg Tj Storage temperature Operating junction temperature 1. Current limited by package. Table 3. Symbol Rthj-case Thermal data Parameter Doc ID 023096 Rev 1 3/12 Electrical characteristics 2 STFI260N6F6 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage (VGS = 0) ID = 250 µA Zero gate voltage Drain current (VGS = 0) IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 60 A Symbol Parameter Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Symbol Typ. Max. 60 Unit V 1 µA 100 µA ± 100 nA 4 V 2.4 3 mΩ Typ. Max. Unit VDS = 60 V, TC=125 °C 2 Dynamic Ciss Table 6. Min. VDS = 60 V IDSS Table 5. 4/12 On/off states Test conditions Min. 11400 VDS = 25 V, f = 1 MHz, VGS = 0 VDD = 30 V, ID = 120 A, VGS = 10 V (see Figure 14) - - 1100 pF - pF 400 pF 183 nC 53 - 41 nC nC Switching times Parameter td(on) tr Turn-on delay time Rise time td(off) tf Turn-off-delay time Fall time Test conditions VDD = 30 V, ID = 60 A RG = 4.7 Ω VGS = 10 V (see Figure 13) Doc ID 023096 Rev 1 Min. Typ. Max. Unit - 31.4 165 - ns ns - 144.4 62.6 - ns ns STFI260N6F6 Electrical characteristics Table 7. Symbol ISD Source drain diode Parameter Test conditions Min. Typ. Max Unit Source-drain current - 120 A ISDM (1) Source-drain current (pulsed) - 480 A VSD (2) Forward on voltage ISD = 120 A, VGS = 0 - 1.1 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 120 A, VDD = 48 V di/dt = 100 A/µs, Tj = 150 °C (see Figure 15) - trr Qrr IRRM 55.6 116 3.8 ns nC A 1. Current limited by package. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 023096 Rev 1 5/12 Electrical characteristics STFI260N6F6 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM12623v1 ID (A) is ea ) ar S(on is th RD in ax n m tio by ra pe ed O mit Li 100 100µs 1ms 10ms Tj=175°C Tc=25°C 10 Sinlge pulse 1 Figure 4. 10 1 0.1 VDS(V) Output characteristics AM09069v1 AM09070v1 ID(A) ID (A) 400 VDS=2V 400 VGS=10V 350 350 6V 300 300 250 250 5V 200 200 150 150 100 100 50 50 0 0 Figure 6. 1 2 3 VDS(V) Normalized BVDSS vs. temperature AM09071v1 BVDSS (norm) ID=1mA 1.1 0 0 Figure 7. 1 2 4 3 5 VGS(V) Static drain-source on-resistance AM09072v1 RDS(on) (mΩ) 4.0 VGS=10V 3.5 1.0 3.0 2.5 0.9 2.0 0.8 1.5 1.0 0.7 0.5 0.6 -75 6/12 -25 25 75 125 175 TJ(°C) 0.0 0 Doc ID 023096 Rev 1 20 40 60 80 100 120 ID(A) STFI260N6F6 Figure 8. Electrical characteristics Gate charge vs. gate-source voltage Figure 9. AM09073v1 VGS (V) Capacitance variations AM09074v1 C (pF) f=1MHz VDD=30V ID=120A 12 10 10000 Ciss 1000 Coss 8 6 4 Crss 2 0 0 100 50 150 200 100 Qg(nC) Figure 10. Normalized gate threshold voltage vs. temperature AM09075v1 VGS(th) (norm) 0.1 1 Figure 11. Normalized on-resistance vs. temperature AM09076v1 RDS(on) (norm) ID=60A VGS=10V ID=250µA 1.2 VDS(V) 10 2.0 1.0 1.5 0.8 0.6 1.0 0.4 0.5 0.2 -75 25 -25 75 175 TJ(°C) 125 0 -75 -25 25 75 125 175 TJ(°C) Figure 12. Source-drain diode forward characteristics AM09077v1 VSD (V) TJ=-55°C 1.0 0.9 TJ=25°C 0.8 0.7 TJ=175°C 0.6 0.5 0.4 0 20 40 60 80 100 120 ISD(A) Doc ID 023096 Rev 1 7/12 Test circuits 3 STFI260N6F6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/12 0 Doc ID 023096 Rev 1 10% AM01473v1 STFI260N6F6 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 023096 Rev 1 9/12 Package mechanical data Table 8. STFI260N6F6 I2PAKFP (TO-281) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 F1 1.20 - G 4.95 5.20 H 10.00 10.40 L1 21.00 23.00 L2 13.20 14.10 L3 10.55 10.85 L4 2.70 3.20 L5 0.85 1.25 L6 7.30 7.50 Figure 19. I2PAKFP (TO-281) drawing REV! 10/12 Doc ID 023096 Rev 1 STFI260N6F6 5 Revision history Revision history Table 9. Document revision history Date Revision 13-Apr-2012 1 Changes First release. Doc ID 023096 Rev 1 11/12 STFI260N6F6 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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