VISHAY SIP12503

SiP12503
Vishay Siliconix
500-mA - Adjustable Boost Converter for Single or Dual Cell
DESCRIPTION
FEATURES
SiP12503 is a boost converter IC with adjustable output
voltage for single or dual cell NiMH or Alkaline battery pack.
Featuring with an internal low resistance power MOSFET, it
is capable of starting up with a low battery voltage of 0.85 V.
It only needs six external components (an inductor, a diode,two capacitors and two resistors) to construct a step-up
converter. For best efficiency performance, it is designed to
operate in PWM mode with 300 kHZ switching frequency
under normal load and in PFM mode under light load. The
voltage-mode control loop is internally compensated,
simplifying converter design and reducing external parts
count. It accepts input voltages from 0.85 V to 5.0 V, and
adjustable output voltages from 2 V to 5 V. It also features
low shutdown current of under 1 µA, over voltage protection,
thermal shutdown protection, and antiring control to minimize
EMI.
• Voltage mode control with internal frequency
compensation
• 0.85 V to 5.0 V input voltage range
• Adjustable output voltage range from 2.0 V to 5.0 V
• Low startup voltage: 0.65 V
• PWM control with 300 kHz fixed switching frequency
• PFM control for light load
• Powered from the output voltage supply
• Integrated UVLO and soft-start
• Logic controlled shutdown (< 1 µA)
• 85 % typical efficiency
• Internal power MOS switch: 0.2 Ω at 3.3 V output
• Antiringing switch to minimize EMI
• Shutdown input
• Thermal shutdown
• Minimum external components
• PowerPAK® MLP33-6 package (DFN-6, 3 x 3)
• Over voltage protection
SiP12503 is available in a lead (Pb)-free 6 pin, PowerPAK
MLP33 package and is specified to operate over the
industrial temperature range of - 40 °C to 85 °C.
APPLICATIONS
•
•
•
•
•
•
Portable applications
Battery-powered equipment
Handheld devices
Digital cameras
Wireless handsets
LCD and OLED bias
TYPICAL APPLICATION CIRCUIT
VIN
10 µH
2
10 µF
VIN
XSHD
1
XSHD
LX
6
MBR0520
VOUT
47 µF
450 KΩ
SiP12503
FB
3
VOUT
GND
4
100 KΩ
5
Document Number: 73579
S09-1454-Rev. B, 03-Aug-09
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1
SiP12503
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (all voltages referenced to GND = 0 V)
Parameter
Limit
Input Voltage, VIN
- 0.3 to VOUT + 0.5
LX Voltage
Output Voltage, VOUT
V
- 0.3 to 6
- 0.3 to VIN + 0.5
XSHD Voltage
FB Voltage
- 0.3 to 6
Maximum Junction Temperature
150
Storage Temperature
- 55 to 150
Operating Junction Temperature
°C
125
PowerPAK MLP33-6 (TA = 70 °C)a
Power Dissipationa
Thermal Resistance
Unit
- 0.3 to 6
b
PowerPAK MLP33-6
1100
mW
50
°C/W
Notes:
a. Derate 20 mW/°C above 70 °C.
b. Device mounted with all leads soldered or welded to PC board.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE (all voltages referenced to GND = 0 V)
Parameter
Limit
Input Voltage, VIN
Unit
0.85 to 5.0
Output Voltage, VOUT
2.0 to 5
XSHD Voltage
0 to VIN
V
LX Voltage
0 to VOUT + 0.5
FB Voltage
0 to 5 VOUT
Operating Temperature Range
- 40 to 85
°C
SPECIFICATIONS
Limits
Test Conditions Unless Specified
Parameter
Symbol
VIN = 1.2 V, VOUT = Vnome, TA = 25 °C
Temp.a
Minimum Start-Up Voltage
VSTART
ILOAD = 1 mA
Full
Minimum Operating Voltaged
VHOLD
XSHD = VIN
UVLO
VUVLO
Rising VOUT
UVLO Hysteresis
VUVLOHYST
FB Voltage Accuracy
VFB
Feedback Input Current
IFB
Min.b
Typ.c
Max.b
0.65
0.85
0.55
Full
1.8
Full
V
0.100
- 1.5
+ 1.5
- 25 to
85 °C
- 3.0
+ 3.0
Full
- 3.5
+ 3.5
VFB = 0.6 V
1
Maximum PWM Duty Cycle
MAXDTY
Full
80
87
PWM Switching Frequency
fOSC
Full
225
300
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2
2
Unit
%
nA
%
375
kHz
Document Number: 73579
S09-1454-Rev. B, 03-Aug-09
SiP12503
Vishay Siliconix
SPECIFICATIONS
Limits
Test Conditions Unless Specified
Parameter
Symbol
Supply Current 1
Supply Current 2
OUT
VIN = 1.2 V, VOUT = Vnome, TA = 25 °C
Typ.c
Max.b
VOUT = Vnom X 0.95
330
450
VOUT = Vnom + 0.5 V, VLX > VIN
134
Temp.
Min.b
VOUT = Vnom + 0.5 V, VLX < VIN
Supply Current 3
Stand-By Current
ISTB
XSHD = 0 V, not including switch leakage
NMOS Switch Leakage
ILEAK
LX = 5 V
RDS(on)
VOUT = 3.3 V
NMOS Switch On Resistance
a
44
1
1
Full
3
IFTOF
22
VXSHDL
Softstart Time
tSTART
0.8 V ≤ VIN ≤ 0.9 V
Full
0.55
0.9 V< VIN ≤ 2 V
Full
0.8
2 V < VIN ≤ 5 V
Full
1.2
mA
V
Full
ViN = 1.8 V
Ω
0.2
IWTOF
XSHD Input Low Level
2
10
PWM to PFM Current Threshold
VXSHDH
µA
Full
PFM to PWM Current Threshold
XSHD Input High Level
Unit
0.2
1.6
Over Voltage Threshold
VOV
110
Over Voltage Hysteresis
VOVHYST
10
Thermal Shutdown
TSHD
160
Thermal Shutdown Hysteresis
THYST
20
ms
%
°C
Notes:
a. Full = - 40 °C to 85 °C.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum (- 40 °C to 85 °C).
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Minimum operating voltage is determined by the battery’s capability to provide energy as it is deeply discharged.
e. Vnom equals programmed output voltage.
Document Number: 73579
S09-1454-Rev. B, 03-Aug-09
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SiP12503
Vishay Siliconix
PIN CONFIGURATION AND TRUTH TABLE
PowerPAK MLP33-6
XSHD
1
6
LX
VIN
2
5
GND
VOUT
3
4
FB
Top View
ORDERING INFORMATION
Part Number
Temperature Range
Marking
SiP12503DMP-T1-E3
- 40 °C to 85 °C
2503
PIN DESCRIPTION
Pin Number
Name
1
XSDH
2
VIN
3
VOUT
4
FB
5
GND
6
LX
Function
Logic controlled shutdown Input, XSHD = high: normal operation, XSHD = low: shutdown
Input voltage
Output of the boost converter and power source for the IC-battery
Output voltage feedback pin
Signal and power ground
Switch pin
PIN FUNCTIONS
XSHD (Pin 1)
GND (Pin 5)
XSHD is a logic-level shutdown control pin. When XSHD is
low, the IC’s switching is disabled, and an antiringing switch
is connected between LX and VIN. When XSHD is high, the
IC is working in normal operation.
GND is the ground pin for signal and power ground.
VIN (Pin 2)
VIN is the pin connected to battery input voltage. At start-up,
SiP12503 is powered from the voltage at the VIN pin. Once
VOUT exceeds VIN, the SiP12503 is powered from VOUT.
This increases the drive to the gate of the internal power
switch, to allow higher maximum output currents and higher
converter efficiency.
LX (Pin 6)
LX connects to the drain of the internal power MOSFET
(boost switch). Externally, the LX pin should be connected to
the boost inductor and Schottky diode. If the inductor current
falls to zero, or XSHD is low, an internal antiringing switch is
short from LX to VIN to minimize EMI.
VOUT (Pin 3)
VOUT is the output of the boost converter and also the power
source for the IC.
FB (Pin 4)
FB is the output voltage feedback pin via an external resistor
divider. The feedback voltage is nominally 0.6 V.
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Document Number: 73579
S09-1454-Rev. B, 03-Aug-09
SiP12503
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM
VIN
VOUT
GND
Over Voltage
Compensation
Antiringing SW
Start-Up
LX
FB
XSHD
E/A
+
Reference and Soft-Start
+
PWM
-
Driver
PFM
Oscillator
DETAILED OPERATION
SiP12503 is a 300 kHz boost converter IC, packaged in 6 pin
MLP33 PowerPAKTM package. With start-up from input
voltages as low as 0.65 V, this device features fixed
frequency voltage mode PWM control with internal frequency
compensation. With its low RDS(on) internal power MOSFET,
this device maintains high efficiency over a wide range of
load current. Under light load conditions, it switches to in
PFM mode to maintain high efficiency. A FB pin is available
to adjust the output voltage.
Low Voltage Start-Up
SiP12503 is designed to start-up at input voltage of typically
0.65 V. At start-up, VOUT is lower than VIN due to the voltage
drop of the Schottky diode. Therefore, the device uses VIN as
the power source for its control logic and internal gate drive,
until VOUT exceeds VIN. During the start-up interval, the
boost switch’s conduction interval during each cycle is
determined by the time taken for the inductor current to reach
internal current limit, followed by a fixed off time before the
switch is allowed to turn on again. Once VOUT exceeds VIN,
the device uses VOUT as the IC’s power source. When VOUT
exceeds 1.89 V, the device engages is built-in soft-start
circuitry.
Over Voltage Protection
If the output voltage is above 10 % of the regulation voltage,
the device will turn off the internal power mosfet and wait until
the output voltage fails below the regulation voltage, then the
PWM operation is enabled again.
Thermal Shutdown Protection
If the internal device temperature rises above 160 °C, the
device will turn off the internal power MOSFET. Once the die
temperature falls below 140 °C, then the device performs a
new soft-start cycle, and the converter resumes normal
operation.
Antiringing Control
The antiringing control circuitry prevents high frequency
ringing at the LX pin as the inductor current goes to zero by
damping the resonant circuit formed by L and CLX
(capacitance on LX pin). When the IC is shutdown, this
antiringing switch is also turned on.
APPLICATION INFORMATION
Soft-Start
Setting the Adjustable Output Voltage
During soft-start, the loop compensation guarantees the slow
increase of output voltage, so that no large voltage overshoot
or inrush current transients occur when the soft-start period
ends.
The SiP12503 regulated output can be adjusted from 1.8 V
to 5.0 V via a resistor divider network from VOUT to GND. R1
and R2 should be kept in the 50 kΩ to 100 kΩ range for low
power consumption while maintaing adequate noise
immunity. The value of R1 is calculated using the following
formula:
PWM operation
After the soft-start interval is over, the device works in PWM
operation with a fixed frequency of 300 kHz, with automatic
switch-over to PFM operation during light load conditions.
R1 = R2 * [(VOUT/VFB) - 1]
VFB = 0.6 V
PFM Operation
When operating into light loads, the SiP12502 automatically
switches to PFM operation. This reduces gate charge losses
in the boost switch, hence raising converter efficiency.
Document Number: 73579
S09-1454-Rev. B, 03-Aug-09
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SiP12503
Vishay Siliconix
TYPICAL CHARACTERISTICS
0.40
320
310
0.35
Supply Current 1 (mA)
Frequency (kHz)
300
290
280
270
0.30
0.25
260
250
- 50
- 30
- 10
10
30
50
70
0.20
- 50
90
- 30
- 10
10
30
50
70
90
Temperature (°C)
Temperature (°C)
Supply Current 1 vs Temperature
Frequency vs. Temperature
93
0.180
92
0.175
90
0.165
% Duty Cycle
Supply Current 2 (mA)
91
0.170
0.160
0.155
89
88
87
86
0.150
85
0.145
84
0.140
- 50
- 30
- 10
10
30
50
70
83
- 60
90
- 40
- 20
Supply Current 2 vs. Temperature
20
40
60
80
100
Maximum PWM Duty Cycle vs. Temperature
0.18
1.0
0.16
0.9
Shutdown Input Voltage
Threshold (V)
0.14
0.12
RDS(on) Ω
0
Temperature (°C)
Temperature (°C)
0.10
0.08
0.06
0.8
0.7
0.6
0.5
0.4
0.04
0.3
0.02
0.00
0
1
2
3
4
VOUT (V)
RDS(on) vs. Output Voltage
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6
5
6
0.2
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VIN (V)
Shutdown Input Voltage Threshold vs. VIN
Document Number: 73579
S09-1454-Rev. B, 03-Aug-09
SiP12503
Vishay Siliconix
TYPICAL CHARACTERISTICS
1.2
4
VIN = 5.0 V
1.0
Shutdown Threshold (V)
Feedback Voltage Accuracy (%)
3
2
1
0
-1
0.8
VIN = 2.0 V
0.6
VIN = 0.8 V
0.4
-2
0.2
-3
-4
- 50
- 30
- 10
10
30
50
70
0.0
- 50
90
10
30
50
70
Temperature (°C)
Temperature (°C)
Shutdown Threshold vs. Temperature
100
80
90
70
80
90
70
Efficiency (%)
60
Efficiency (%)
- 10
Feedback Voltage vs. Temperature
90
50
40
30
60
50
40
30
20
20
10
10
0
0.1
- 30
1
10
100
1000
0
0.1
1
10
100
Load Current (mA)
Load Current (mA)
VIN = 1.2 V, VOUT = 2 V
VIN = 2.4 V, VOUT = 3.3 V
1000
100
90
80
Efficiency (%)
70
60
50
40
30
20
10
0
0.1
1
10
100
1000
Load Current (mA)
VIN = 2.4 V, VOUT = 5 V
Document Number: 73579
S09-1454-Rev. B, 03-Aug-09
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SiP12503
Vishay Siliconix
TYPICAL WAVEFORMS
VOUT
50 mV/div
VOUT
20 mV/div
LX
2 V/div
LX
2 V/div
1 µs/div
100 µs/div
Typical Switching Waveform PWM Mode
VIN = 1.2 V, VOUT = 3.3 V, Load Current = 150 mA,
L = 10 µH; COUT = 47 µF
Typical Switching Waveform PFM Mode
VIN = 1.2 V, VOUT = 3.3 V, Load Current = 10 mA,
L = 10 µH; COUT = 47 µF
VOUT
1 V/div
5 ms/div
Soft Start
VIN = 1.2 V, VOUT = 3.3 V, Load Current = 50 mA,
L = 10 µH; COUT = 47 µF
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73579.
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Document Number: 73579
S09-1454-Rev. B, 03-Aug-09
Package Information
Vishay Siliconix
PowerPAKr MLP33-6, 8 and 10 (POWER IC ONLY)
4xQ
//
ccc
A
NX
8
Detail D
TopView
C
A2
A1
A3
0.08 C
Side View
Detail C
NX b
bbb M C A A
e
1
ÉÉÉ
ÇÇ
ÉÉÉ
ÇÇ
ÉÉÉ
Detail C
A1
Seating
Plane
C
5
ddd M C
2
Exposed
Pad
(Optional)
L
7
R2
R
11
D
E2
L2
E2/2
Detail D
A
B
NxK
See Detail A
7
N
8
N-1
6
See Detail B
D2/2
(ND-1) x
Pin 1
Mark
4
e
9
D2
aaa C
9
Bottom View
2X
2X
Datum A or B
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
aaa C
1
E
L2
Datum A or B
NX R1
NX R1
L
e/2
e
Even pin/Side
L2
pin Tip
e
pin Tip
5
Odd pin/Side
5
Detail B
0.17 min
L1
Exposed Slug/Heat Sink
L2
This Feature Applies To
Both Ends of The Package
0.17
0.30
B
Exposed Metalized Feature
Detail A
Document Number: 72820
28-Jan-04
10
Edge of Plastic Body
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1
Package Information
Vishay Siliconix
PowerPAKr MLP33-6, 8, 10
N = 6 PITCH: 0.95 mm
N = 8 PITCH: 0.65 mm
N = 10 PITCH: 0.50 mm
MILLIMETERS*
Dim
A
A1
A2
A3
aaa
b-6
b-8
b-10
bbb
ccc
D
D2
ddd
E
E2
e-6
e-8
e-10
K
L
L1-6
L1-8
L1-10
L2
R Ref
R1 Ref-6
R1 Ref-8
R1 Ref-10
Q
INCHES
Basic
Min
Nom
Max
Basic
Min
Nom
Max
Notes
−
0.80
0.90
1.00
−
0.031
0.035
0.039
1, 2
−
0.00
0.025
0.05
−
0.000
0.001
0.002
1, 2
−
0.65
0.70
0.75
−
0.026
0.028
0.030
1, 2
−
0.15
0.20
0.25
−
0.006
0.008
0.010
1, 2
−
−
0.10
−
−
−
0.004
−
1, 2
−
0.33
0.35
0.43
−
0.013
0.014
0.017
1, 2, 8
−
0.285
0.305
0.385
−
0.011
0.012
0.015
1, 2, 8
−
0.18
0.20
0.28
−
0.007
0.008
0.011
1, 2, 8
−
−
0.10
−
−
−
0.004
−
1, 2
−
−
0.10
−
−
−
0.004
−
1, 2
3.00
−
−
−
0.118
−
−
−
1, 2, 8
−
1.92
2.02
2.12
−
0.076
0.080
0.083
1, 2, 8
−
−
0.05
−
−
3.00
−
−
−
0.118
−
−
−
1, 2, 8
−
1.10
1.20
1.30
−
0.043
0.047
0.051
1, 2, 8
−
−
0.95
−
−
−
0.037
−
1, 2
−
−
0.65
−
−
−
0.026
−
1, 2
−
−
0.50
−
−
−
0.020
−
1, 2
−
0.20
−
−
−
0.008
−
−
5, 11
−
0.20
0.29
0.45
−
0.008
0.011
0.018
1, 2, 8
−
0.16
0.24
0.40
−
0.006
0.009
0.016
1, 2, 8
−
0.16
0.24
0.40
−
0.006
0.009
0.016
1, 2, 8
−
−
−
−
−
−
−
−
1, 2, 8
−
−
−
0.125
−
−
−
0.005
5, 11
−
−
0.15
−
−
−
0.006
−
1, 2, 8
−
−
0.127
−
−
−
0.005
−
1, 2, 8
−
−
0.15
−
−
−
0.006
−
1, 2, 8
−
−
0.075
−
−
−
0.003
−
1, 2, 8
−
0_
10_
12_
−
0_
10_
12_
1, 2
0.002
1, 2
* Use millimeters as the primary measurement.
ECN: S-40082—Rev. A, 02-Feb-04
DWG: 5925
NOTES:
1.
Dimensioning and tolerancing conform to ASME Y14.5M-1994.
2.
All dimensions are in millimeters. All angels are in degrees.
3.
N is the total number of pins.
4.
The pin #1 identifier and pin numbering convention shall conform to JESD 95-1 SPP-012. Details of pin #1 identifier is located within the
zone indicated. The pin #1 identifier is marked.
5.
Dimension b applies to metallized pin and is measured between 0.15 mm and 0.20 mm from the pin tip.
6.
ND refers to the maximum number of pins on the D side.
7.
Depopulation of pins is allowed and will be called out on the individual variation.
8.
Coplanarity applies to the exposed heat sink slug as well as the pins.
9.
Profile tolerance (aaa) will be applicable only to the plastic body and not to the metallized features (such as the pin tips and tie bars.)
Metallized features may protrude a maximum of L2 from the plastic body profile.
10.
L1 max is not called out, the metallized feature will extend to the exposed pad. Thus, the 0.17-mm gap does not apply.
11.
The corner will be sharp unless otherwise specified with radius dimensions.
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Document Number: 72820
28-Jan-04
Legal Disclaimer Notice
Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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