HVM14 Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator REJ03G0112-0400Z (Previous: ADE-208-082C) Rev.4.00 Oct.08.2003 Features • Low forward resistance. (rf = 7.0 Ω max) • Low capacitance. (C = 0.25 pF typ) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HVM14 H5 MPAK Pin Arrangement 3 2 1 (Top View) Rev.4.00, Oct.08.2003, page 1 of 4 1. NC 2. Anode 3. Cathode HVM14 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse voltage VR 50 V Forward current IF 50 mA Power dissipation Pd 100 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.0 V IF = 50 mA Reverse current IR — — 100 nA VR = 50 V Capacitance C — 0.25 — pF VR = 50 V, f = 1 MHz rf — — 7.0 Ω IF = 10 mA, f = 100 MHz — 200 — — V C = 200 pF, Both forward and reverse direction 1 pulse. Forward resistance 1 ESD-Capability * Note: 1. Failure criterion; IR ≥ 200 nA at VR = 50 V Rev.4.00, Oct. 08.2003, page 2 of 4 HVM14 Main Characteristic 10–8 10–1 Reverse current IR (A) Forward current IF (A) 10–3 10–5 10–7 –9 10–9 10–10 10–11 10 10–11 0 0.2 0.4 0.6 0.8 1.0 10–12 0 10 20 30 40 50 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage 104 f = 100MHz f = 1MHz Forward resistance rf (Ω) Capacitance C (pF) 10 1.0 0.1 1.0 10 100 103 102 10 1.0 –5 10 10–4 10–3 10–2 Reverse voltage VR (V) Forward current IF (A) Fig.3 Capacitance vs. Reverse voltage Fig.4 Forward resistance vs. Forward current Rev.4.00, Oct. 08.2003, page 3 of 4 HVM14 Package Dimensions As of January, 2003 1.9 ± 0.2 2.8 + 0.2 – 0.6 + 0.2 1.1 – 0.1 0.3 2.8 +– 0.1 0 – 0.1 (0.3) (0.95) (0.95) + 0.10 0.16 – 0.06 (0.65) 1.5 ± 0.15 0.10 3–0.4 +– 0.05 (0.65) Unit: mm Package Code JEDEC JEITA Mass (reference value) Rev.4.00, Oct. 08.2003, page 4 of 4 MPAK(D) — Conforms 0.011 g Sales Strategic Planning Div. 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