SPICE Model Checklist 0.35µm CMOS process (C35)

GSA MIXED-SIGNAL/RF
SPICE MODEL CHECKLIST
Checklist Form
Version 1.4 - April 2015
Foundry and Support Contact Information
Foundry
ams AG
Process
0.35µm CMOS - C35xx – hitkit 4.10
Date
06/2012
SPICE Model Support Contact
Name
Ehrenfried Seebacher
Phone
+43 3136/500 31790
Email
[email protected]
Foundry Modeling Documents
Document
Document Number & Title
Section
Revision
Date
SPICE Model Library
ENG-182: C35 Process Parameters
4
6.0
Dec 2008
Measured vs. Simulated Data
ENG-182: C35 Process Parameters
5
6.0
Dec 2008
RF SPICE Model Library
ENG-188: C35 RF Spice Models
all
5.0
Nov 2005
Noise Model
ENG-189: C35 Noise Parameters
all
6.0
Jun 2011
Matching Models
ENG-228: C35 Matching Parameters
all
3.0
Nov 2011
Design Rules
ENG-183: C35 Design Rules
all
9.0
May 2011
Process Flow/X-section
ENG-182: C35 Process Parameters
6.0
Dec 2008
Device Characterization Report
ENG-182: C35 Process Parameters
6.0
Dec 2008
4
PCM Structure & Test Report
Device Parasitic Methods
Checklist Form
Version 1.4
Page 1
Circuit Simulators
Simulator
Vendor and Tool
Level
Support
Version
Circuit Simulator (A)
Spectre
53
MMSIM10ISR17
Circuit Simulator (B)
Eldo
53
V2010.2
Circuit Simulator (C)
Hspice
49
V2009.09
Circuit Simulator (D)
Smartspice
49
2.11.0
Circuit Simulator (E)
Smash
8
4.3.5
Circuit Simulator (F)
Saber
53
4.3
Circuit Simulator (G)
Pspice
7
V9.1
Circuit Simulator (H)
Agilent-ADSsim
8
2004A
Version
Date
Comments
1.) Model Benchmark Simulator vs. Simulator > criteria: error < 0.5%
2.) Monte Carlo and Mismatch available for Spectre, Eldo
3.) Special RF Models for Resistors, Caps, MOS available in Spectre, Eldo, ADSsim
Checklist Form
Version 1.4
Page 2
MOS
BJT
Diode
CAP
RES
No of Plots
Max Error
Corner Val
Model Val
Samples/Lots
Stat Method
Stat Model
HV Params
RF Params
HF Noise
1/f Noise
No of Bins
Terminals
Comments
Model Style
Version
Model Type
Model Name
Device Type
Device Name
Model Classification, Noise, Matching, Statistical Variation, Results
nmos4
modn
Bsim3
3.2
C
1
4
1
M
S
SMC
R
8
pmos4
modp
Bsim3
3.2
C
1
4
1
M
S
SMC
R
8
nmosh4
modnh
Bsim3
3.2
S
2
4
1
M
S
SMC
R
2
nmosm4
modnm
Bsim3
3.2
C
1
4
1
M
S
SMC
R
8
pmosm4
modpm
Bsim3
3.2
C
1
4
1
M
S
SMC
R
8
nmosmh4
modnmh
Bsim3
3.2
S
2
4
1
M
S
SMC
R
2
nmosrf
modnrf
Bsim3
3.2
S
3
4
1
M
YSF
S
SMC
R
13
pmosrf
modprf
Bsim3
3.2
S
3
4
1
M
YSF
S
SMC
R
13
nmosl4
modnl
Bsim3
3.2
C
1
4
1
M
S
SMC
R
8
pmosl4
modpl
Bsim3
3.2
C
1
4
1
M
S
SMC
R
8
nmosml4
modnml
Bsim3
3.2
C
1
4
1
M
S
SMC
R
8
pmosml4
modpml
Bsim3
3.2
C
1
4
1
M
S
SMC
R
8
nmoshl4
modnhl
Bsim3
3.2
S
2
4
1
M
S
SMC
R
2
nmosmhl4
modnmhl
Bsim3
3.2
S
2
4
1
M
S
SMC
R
2
vert10
vert10
GP
1
C
4
4
1
M
S
SMC
R
2
lat2
lat2
GP
1
C
4
5
1
M
S
SMC
R
2
subdiode
nd
Berkeley
5
C
2
1
welldiode
pd
Berkeley
5
C
2
1
nwd
nwd
Berkeley
5
C
2
1
ngatecap
ngatecap
CAP
C
1
S
SC
R
cpoly
cpoly
CAP
C
2
1
S
SC
R
cmim
cmim
CAP
C
2
1
S
SC
R
rdiffp
rdiffp
RES
C
2
1
M
S
SC
R
rdiffp3
rdiffp3
JFET
C
3
1
M
S
SC
R
rdiffn
rdiffn
RES
C
2
1
M
S
SC
R
rdiffn3
rdiffn3
JFET
C
3
1
M
S
SC
R
rnwell
rnwell
JFET
C
3
1
M
S
SC
R
rpoly1
rpoly1
RES
6
C
2
1
M
S
SMC
R
rpoly2
rpoly2
RES
6
C
2
1
M
S
SMC
R
rpolyh
rpolyh
RES
6
C
2
1
M
S
SMC
R
rpolyz
rpolyz
RES
C
2
1
M
S
SMC
R
rpolyhrf
rpolyhrf
RES
3
S
3
3
1
M
YSF
S
SC
R
6
rpoly2rf
rpoly2rf
RES
3
S
3
3
1
M
YSF
S
SC
R
6
S
3
1
YSF
C
R
9
S
3
1
YSF
SMC
R
9
IND
StxxxAyyyB
VAR
CVAR
IND
cvar
Model Style:
1/f Noise, HF Noise:
RF Parameters:
HV Parameters:
Stat Model:
Model Val:
Checklist Form
BSIM
3.2
S
C
M
Y
S
F
S
S
C
M
R
S
Subcircuit Model
Compact Model
Measured
Y-Parameters Included
S-Parameters Included
FT or Transition Frequency Numbers Included
Safe Operating Area
Statistical Parameters Available
Process Corner Models Available
Matching Parameters Available
Results of Model Validation Available
Version 1.4
Page 3
1
Comments
1.)
2.)
3.)
4.)
5.)
6.)
1.
Scalable MOS models with physical parameter set
High Voltage MOS Transistors with fixed layout; Usage for specific cells only
Fully modeled RF behavior valid to given fmax
Fixed layout for bipolar models
Model usage only in backward direction
Simple resistor model without RF behavior includes voltage, temp.- dependency and width dependency
W=f(T)
7.)Inductor name syntax: S..spiral, T..type(P=square,Y=square symm), xxx port1 drive ind *10 in nH,
A..layout, yyy..outer diameter, B..process
Active Device Specific Parameters
Device
Type
Device
Name
Model
Name
Geom
Min
Width
MOS
nmos4
modn
10
0.4
pmos4
modp
10
0.4
nmosm4
modnm
10
pmosm4
modmp
nmosh4
nmosmh4
BJT
Max
Width
Min
Length
Max
Length
Max
Finger
Min
Temp
Max
Temp
Max
Freq
0.35
-40
180
*)
0.35
-40
180
*)
0.4
0.5
-40
180
10
0.4
0.5
-40
180
modnh
10
0.4
3.0
3.0
-40
180
modnmh
10
0.4
3.0
3.0
-40
180
nmosrf
modnrf
3
5.0
200
0.35
0.35
40
-40
180
pmosrf
modprf
3
5.0
150
0.35
0.35
30
-40
180
nmosl4
modnl
10
0.4
0.35
-40
180
pmosl4
modpl
10
0.4
0.35
-40
180
nmosml4
modnml
10
0.4
0.5
-40
180
pmosml4
modpml
10
0.4
0.5
-40
180
nmoshl4
modnhl
3
0.4
3.0
3.0
-40
180
nmosmhl4
modnmhl
3
0.4
3.0
3.0
-40
180
VERT10
vert10
10
10
10
10
-40
180
LAT2
lat2
2
2
2
2
-40
180
*) Max. frequency is strongly dependent on the transistor length:
for L=0.35um fmax=1GHz.
Checklist Form
Version 1.4
Page 4
Passive Device Specific Parameters
Device
Type
Device
Name
Model
Name
Diode
subdiode
Min
Temp
Max
Temp
nd
-40
180
welldiode
pd
-40
180
nwd
nwd
-40
180
VAR
cvar
cvar
-40
125
6
IND
StxxxAyyyB
-40
125
>6
CAP
ngatecap
ngatecap
0.4
0.35
-40
125
cpoly
cpoly
0.8
0.8
-40
180
cmim
cmim
4.0
-40
125
rdiffp
rdiffp
0.3
L/W>5
-40
180
rdiffp3
rdiffp3
0.3
L/W>5
-40
180
rdiffp
rdiffn
0.3
L/W>5
-40
180
rdiffp3
rdiffn3
0.3
L/W>5
-40
180
rnwell
rnwell
3.0
L/W>5
-40
180
0.65
L/W>5
-40
180
0.8
L/W>5
-40
180
RES
Geom
Min
Width
6
3
Max
Width
1000
30
Min
Length
0.65
4.0
Max
Length
0.65
30
Max
Freq
rpoly2
rpoly2
rpoly2p
rpoly2ph
rpolyh
rpolyh
rpolyhrf
rpolyhrf
3
1
3
30
-40
180
>6
rpoly2rf
rpoly2rf
3
1
3
90
-40
180
>6
*Inductor name syntax: S..spiral, T..type(P=square,Y=square symm), xxx port1 drive ind *10 in nH,
A..layout, yyy..outer diameter, B..process
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Checklist Form
Version 1.4
Page 5