GSA MIXED-SIGNAL/RF SPICE MODEL CHECKLIST Checklist Form Version 1.4, Apr 2015 Foundry and Support Contact Information Foundry ams AG Process 0.35µm SiGe-BiCMOS - S35xx – hitkit 4.10 Date 06/2012 SPICE Model Support Contact Name Ehrenfried Seebacher Phone +43 3136/500 31790 Email [email protected] Foundry Modeling Documents Document SPICE Model Library Measured vs. Simulated Data Document Number & Title ENG-219: S35 Process Parameters ENG-308: S35 12V HBT Module PP ENG-219: S35 Process Parameters ENG-308: S35 12V HBT Module PP Section Revision Date 4 5.0 1.0 May 2009 Oct 2006 5.0 May 2009 1.0 Oct 2006 5 RF SPICE Model Library ENG-221: S35 RF Spice Models all 3.0 Nov 2005 Noise Model ENG-225: S35 Noise Parameters all 3.0 Jun 2011 Matching Models ENG-223: S35 Matching Parameters all 2.0 May 2006 6.0 May 2011 2.0 Jan 2007 ENG-219: S35 Process Parameters 5.0 May 2009 ENG-308: S35 12V HBT Module PP 1.0 Oct 2006 5.0 May 2009 1.0 Oct 2006 Design Rules Process Flow/X-section Device Characterization Report ENG-218: S35 Design Rules ENG-309: S35 12V HBT Module DR ENG-219: S35 Process Parameters ENG-308: S35 12V HBT Module PP all 5 PCM Structure & Test Report Device Parasitic Methods Checklist Form Version 1.4 Page 1 Circuit Simulators Level Support Simulator Vendor and Tool Version Circuit Simulator (A) Spectre 53 MMSIM10isr17 Circuit Simulator (B) Eldo 53 V2010.2 Circuit Simulator (C) Hspice 49 V2009.09 Circuit Simulator (D) Smartspice 49 2.11.0 Circuit Simulator (E) Smash 8 4.3.5 Circuit Simulator (F) Agilent-ADSsim 8 2004A Version Date Comments 1.) Model Benchmark Simulator vs. Simulator > criteria: error < 0.5% 2.) Monte Carlo and Mismatch available for Spectre, Eldo 3.) Special RF Models for Resistors, Caps, MOS available in Spectre, Eldo, ADSsim Checklist Form Version 1.4 Page 2 MOS BJT Diode CAP No of Plots Max Error Corner Val Model Val Samples/Lots Stat Method Stat Model HV Params RF Params HF Noise 1/f Noise No of Bins Terminals Comments Model Style Version Model Type Model Name Device Type Device Name Model Classification, Noise, Matching, Statistical Variation, Results nmos4 modn Bsim3 3.2 C 1 4 1 M SMC R 9 pmos4 modp Bsim3 3.2 C 1 4 1 M SMC R 9 nmosh4 modnh Bsim3 3.2 C 2 4 1 M SMC R 2 nmosm4 modnm Bsim3 3.2 C 1 4 1 M SMC R 9 pmosm4 modpm Bsim3 3.2 C 1 4 1 M SMC R 9 nmosmh4 modnmh Bsim3 3.2 C 2 4 1 M SMC R 2 nmosrf modnrf Bsim3 3.2 S 3 4 1 M YSF SMC R 13 pmosrf modprf Bsim3 3.2 S 3 4 1 M YSF SMC R 13 pldmos modpld Bsim3 3.2 S 3 4 1 m YSF SMC R 8 vert10 vert10 GP 1 C 4 4 1 M F SMC R 2 lat2 lat2 GP 1 C 4 5 1 M F SMC R 2 npn111 npn111 VBIC 1.2 C 5 4 1 M M F SMC R 10 npn121 npn121 VBIC 1.2 C 5 4 1 M M F SMC R 10 npn132 npn132 VBIC 1.2 C 5 4 1 M M F SMC R 10 npn143 npn143 VBIC 1.2 C 5 4 1 M M F SMC R 10 npn232 npn232 VBIC 1.2 C 5 4 1 M M F SMC R 10 npn243 npn243 VBIC 1.2 C 5 4 1 M M F SMC R 10 npn254 npn254 VBIC 1.2 C 5 4 1 M M F SMC R 10 npn111h5 npn111h5 VBIC 1.2 C 5 4 1 M M F SMC R 10 npn121h5 npn121h5 VBIC 1.2 C 5 4 1 M M F SMC R 10 npn132h5 npn132h5 VBIC 1.2 C 5 4 1 M M F SMC R 10 npn143h5 npn143h5 VBIC 1.2 C 5 4 1 M M F SMC R 10 npn232h5 npn232h5 VBIC 1.2 C 5 4 1 M M F SMC R 10 npn243h5 npn243h5 VBIC 1.2 C 5 4 1 M M F SMC R 10 npn254h5 npn254h5 VBIC 1.2 C 5 4 1 M M F SMC R 10 non221h12 npn221h12 VBIC 1.2 C 5 4 1 M M F SMC R 4 npn232h12 npn232h12 VBIC 1.2 C 5 4 1 M M F SMC R 4 npn243h12 npn243h12 VBIC 1.2 C 5 4 1 M M F SMC R 4 subdiode nd Berkeley 1 C 6 2 1 welldiode pd Berkeley 1 C 6 2 1 nwd nwd Berkeley 1 C 6 2 1 ngatecap Ngatecap CAP C 1 SC R csink csink CAP C 2 1 SC R 1 cpoly cpoly CAP C 2 1 SC R 1 cstack cstack CAP C 2 1 SC R cmim cmim CAP C 2 1 SC R cmimrf cmimrf CAP S 3 3 1 YSF SC R 9 cpolyrf cpolyrf CAP S 3 3 1 YSF SC R 9 Model Style: 1/f Noise, HF Noise: RF Parameters: HV Parameters: Stat Model: Model Val: Checklist Form S C M Y S F S S C M R S S Subcircuit Model Compact Model Measured Y-Parameters Included S-Parameters Included FT or Transition Frequency Numbers Included Safe Operating Area Statistical Parameters Available Process Corner Models Available Matching Parameters Available Results of Model Validation Available Version 1.4 Page 3 IND No of Plots Max Error Corner Val Model Val Samples/Lots Stat Method Stat Model HV Params RF Params HF Noise 1/f Noise No of Bins Terminals Comments Model Style Version Model Type Model Name Device Name Device Type RES rdiffp rdiffp RES C 2 1 SC R rdiffp3 rdiffp3 JFET C 3 1 SC R rdiffn rdiffn RES C 2 1 SC R rdiffn3 rdiffn3 JFET C 3 1 SC R rnwell rnwell JFET C 3 1 SC R rpolyb rpolyb RES C 2 1 SC R rpolybrf rpolybrf RES S 3 3 1 SC R rpoly1 rpoly1 RES C 7 2 1 SC R rpoly2 rpoly2 RES C 7 2 1 SC R rpoly2rf rpoly2rf RES S 3 3 1 SC R rpolyh rpolyh RES C 7 2 1 SC R rpolyhrf rpolyhrf RES S 3 3 1 YSF SC R 6 IND S 3 1 YSF C R 9 StxxxAyyyB YSF YSF 6 6 DIxx VAR cvar cvar BSIM 3.2 S 3 1 YSF SMC R 9 jvar jvar VBIC 1.2 C 3 1 YSF SMC R 9 Model Style: 1/f Noise, HF Noise: RF Parameters: HV Parameters: Stat Model: Model Val: S C M Y S F S S C M R Subcircuit Model Compact Model Measured Y-Parameters Included S-Parameters Included FT or Transition Frequency Numbers Included Safe Operating Area Statistical Parameters Available Process Corner Models Available Matching Parameters Available Results of Model Validation Available Comments 1. 2. 3. 4. 5. 6. 7. Scalable MOS models with physical parameter set High Voltage MOS Transistors with fixed layout; Usage for specific cells only Fully modelled RF behavior valid to given fmax Fixed layout for bipolar models NPN transistor area scales with length Model usage only in backward direction Simple resistor model without RF behavior includes voltage, temp.- dependency and widthdependency W=f(T) Checklist Form Version 1.4 Page 4 Active Device Specific Parameters Device Type Device Name Model Name Geom Min Width MOS nmos4 modn 10 0.4 pmos4 modp 10 nmosm4 modnm pmsom4 modmp nmosh BJT Max Width Min Length Max Length Max Finger Min Temp Max Temp Max Freq 0.35 -40 125 *) 0.4 0.35 -40 125 *) 10 0.4 0.5 -40 125 10 0.4 0.5 -40 125 modnh 10 0.4 3.0 3.0 -40 125 nmosmh modnmh 10 0.4 3.0 3.0 -40 125 nmosrf modnrf 3 5 200 0.35 0.35 -40 125 pmosrf modprf 3 5 150 0.35 0.35 pldmos modpld 10 20 120 0.35 0.35 vert10 vert10 10 10 10 10 lat2 lat2 2 2 2 2 npn111 npn111 0.4 0.4 0.8 npn121 npn121 0.4 0.4 npn132 npn132 0.4 npn143 npn143 npn232 npn232 npn243 -40 125 24 -40 125 24 1 -40 125 45 0.8 24 1 -40 125 45 0.4 0.8 24 1 -40 125 45 0.4 0.4 0.8 24 1 -40 125 45 0.4 0.4 0.8 24 1 -40 125 45 npn243 0.4 0.4 0.8 24 1 -40 125 45 npn254 npn254 0.4 0.4 0.8 24 1 -40 125 45 npn111h5 npn111h5 0.4 0.4 0.8 24 1 -40 125 45 npn121h5 npn121h5 0.4 0.4 0.8 24 1 -40 125 45 npn132h5 npn132 0.4 0.4 0.8 24 1 -40 125 45 npn143h5 npn143h5 0.4 0.4 0.8 24 1 -40 125 45 npn232h5 npn232 0.4 0.4 0.8 24 1 -40 125 45 npn243h5 npn243h5 0.4 0.4 0.8 24 1 -40 125 45 npn254h5 npn254h5 0.4 0.4 0.8 24 1 -40 125 45 npn221h12 npn221h12 0.4 0.4 0.8 24 1 -40 125 45 npn232h12 npn232h12 0.4 0.4 0.8 24 1 -40 125 45 npn243h12 npn243h12 0.4 0.4 0.8 24 1 -40 125 45 *) Max. frequency is strongly dependent on the transistor length: for L=0.35um fmax=1GHz. Checklist Form Version 1.4 Page 5 Passive Device Specific Parameters Device Type Device Name Model Name Diode subdiode nd welldiode VAR IND Min Temp Max Temp 1 -40 125 pd 1 -40 125 nwd nwd 1 -40 125 cvar cvar 6 1000 0.65 0.65 -40 125 >6 jvar jvar 50 1000 1.4 1.4 -40 125 >6 -40 125 >6 Geom Min Width Max Width Min Length Max Length StxxxAyyyB * Max Freq DIxx CAP RES ngatecap ngatecap 0.4 0.35 -40 125 csink csink 0.35 0.35 -40 125 cpoly cpoly 0.8 0.8 -40 125 cstack cstack 5.2 5.2 -40 125 cmim cmim 4.0 30 4.0 30 -40 125 cpolyrf cpolyrf 1 10.6 33.9 10.6 33.9 -40 125 >6 cmimrf cmimrf 1 10 30 7.7 26 -40 125 >6 rdiffp rdiffp 0.3 L/W>5 -40 125 rdiffp3 rdiffp3 0.3 L/W>5 -40 125 rdiffn rdiffn 0.3 L/W>5 -40 125 rdiffn3 rdiffn3 0.3 L/W>5 -40 125 rnwell rnwell 3.0 L/W>5 -40 125 rpolyb rpolyb 0.7 L/W>5 -40 125 rpoly1 rpoly1 0.65 L/W>5 -40 125 rpoly2 rpoly2 0.65 L/W>5 -40 125 rpolyh rpolyh 0.8 L/W>5 -40 125 rpolybrf rpolybrf 3 1 3 60 -40 125 >6 rpolyhrf rpolyhrf 3 1 3 30 -40 125 >6 rpoly2rf rpoly2rf 3 1 3 90 -40 125 >6 3 *Inductor name syntax: S..spiral, T..type(P=square,Y=square symm), xxx port1 drive ind *10 in nH, A..layout, yyy..outer diameter, B..process IMPORTANT DISCLOSURES Copyright© 2007 by GSA. All rights reserved. GSA grants a worldwide license to all model developers to add their data, contact information and logo to a copy of the GSA Mixed-Signal/RF SPICE Model Checklist and distribute it to their partners, prospects and customers; however, all references to GSA, including GSA logo and GSA references may not be altered in any way. GSA makes no claims to the accuracy of the data entered on an GSA Mixed-Signal/RF SPICE Model Checklist. Checklist Form Version 1.4 Page 6