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TAOS Inc.
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ams AG
The technical content of this TAOS datasheet is still valid.
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TSL257T
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
r
r
TAOS065B − APRIL 2007
D Converts Light Intensity to Output Voltage
D Monolithic Silicon IC Containing
PACKAGE T
4-LEAD SMD
(TOP VIEW)
D
D
D
D
D
4 OUT
GND 2
3 VDD
lv
D
N/C 1
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D
D
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Photodiode, Operational Amplifier, and
Feedback Components
High Sensitivity
Single Voltage Supply Operation (2.7 V to
5.5 V)
High Irradiance Responsivity . . . Typical
680 mV/(μW/cm2) at λp = 640 nm
Low Noise (200 μVrms Typ to 1 kHz)
Rail-to-Rail Output
High Power-Supply Rejection (35 dB at
1 kHz)
Low-Profile Surface-Mount Package
RoHS Compliant
Description
The TSL257T is a high-sensitivity low-noise light-to-voltage optical converter that combines a photodiode and
a transimpedance amplifier on a single monolithic CMOS integrated circuit. Output voltage is directly
proportional to light intensity (irradiance) on the photodiode. The TSL257T has a transimpedance gain of
320 MΩ. The device has improved offset voltage stability and low power consumption and is supplied in a
compact 4-lead surface-mount package.
Functional Block Diagram
−
Voltage
Output
ni
ca
+
Terminal Functions
ch
TERMINAL
NAME
2
Te
GND
DESCRIPTION
T PKG
NO.
Power supply ground (substrate). All voltages are referenced to GND.
OUT
4
Output voltage.
VDD
3
Supply voltage.
N/C
1
No connection.
The LUMENOLOGY r Company
Copyright E 2007, TAOS Inc.
r
Texas Advanced Optoelectronic Solutions Inc.
1001 Klein Road S Suite 300 S Plano, TX 75074 S (972)
r 673-0759
www.taosinc.com
1
TSL257T
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS065B − APRIL 2007
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10 mA
Duration of short-circuit current at (or below) 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 s
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25°C to 85°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25°C to 85°C
Solder conditions in accordance with JEDEC−J−SRD−020A, maximum temperature . . . . . . . . . . . . . . 260°C
†
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Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
lv
Recommended Operating Conditions
Supply voltage, VDD
MAX
2.7
5.5
V
0
70
°C
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Operating free-air temperature, TA
MIN
UNIT
Electrical Characteristics at VDD = 5 V, TA = 25°C, λp = 640 nm, RL = 10 kΩ (unless otherwise noted)
(see Notes 2, 3, and 4)
PARAMETER
VD
Dark voltage
TEST CONDITIONS
MIN
Ee = 0
TYP
0
VDD = 4.5 V,
No Load
VDD = 4.5 V,
RL = 10 kΩ
MAX
15
4.49
UNIT
mV
VOM
Maximum output voltage swing
VO
Output voltage
αVD
Temperature coefficient of dark voltage (VD)
TA = 0°C to 70°C
−15
μV/°C
Re
Irradiance responsivity
See Note 5
680
mV/(μW/cm2)
PSRR
Power supply
pp y rejection
j
ratio
fac = 100 Hz, see Note 6
55
dB
fac = 1 kHz, see Note 6
35
IDD
Supply current
Ee = 2.93 μW/cm2
4
4.2
1.5
2
Ee = 2.93 μW/cm2
3.8
V
dB
mA
Measured with RL = 10 kΩ between output and ground.
Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source.
The input irradiance Ee is supplied by an AlInGaP LED with peak wavelength λp = 640 nm.
Irradiance responsivity is characterized over the range VO = 0.1 V to 4.5 V. The best-fit straight line of Output Voltage VO versus
Irradiance Ee over this range will typically have a positive extrapolated VO value for Ee = 0.
6. Power supply rejection ratio PSRR is defined as 20 log (ΔVDD(f)/ΔVO(f)) with VDD(f = 0) = 5 V and VO(f = 0) = 2 V.
ca
NOTES: 2.
3.
4.
5.
2
2.5
V
ni
Switching Characteristics at VDD = 5 V, TA = 25°C, λp = 640 nm, RL = 10 kΩ (unless otherwise noted)
PARAMETER
TYP
MAX
UNIT
See Note 10 and Figure 1
TEST CONDITIONS
160
250
μs
Output pulse fall time, 10% to 90% of final value
See Note 10 and Figure 1
150
250
μs
Output settling time to 1% of final value
See Note 10 and Figure 1
330
μs
Integrated noise voltage
f = dc to 1 kHz
Ee = 0
200
μVrms
f = 10 Hz
Ee = 0
6
f = 100 Hz
Ee = 0
6
f = 1 kHz
Ee = 0
7
Output pulse rise time, 10% to 90% of final value
tf
ts
Te
ch
tr
Vn
Output
p noise voltage,
g , rms
MIN
μV/√Hz
μ
/
rms
NOTE 7: Switching characteristics apply over the range VO = 0.1 V to 4.5 V.
Copyright E 2007, TAOS Inc.
2
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TSL257T
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS065B − APRIL 2007
PARAMETER MEASUREMENT INFORMATION
VDD
Pulse
Generator
Ee
2
Input
−
3
+
90%
RL
TSL257T
1
tf
tr
Output
Output
(see Note B)
10%
90%
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LED
(see Note A)
10%
VOLTAGE WAVEFORM
TEST CIRCUIT
NOTES: A. The input irradiance is supplied by a pulsed AlInGaP light-emitting diode with the following characteristics: λp = 640 nm,
tr < 1 μs, tf < 1 μs.
lv
B. The output waveform is monitored on an oscilloscope with the following characteristics: tr < 100 ns, Zi ≥ 1 MΩ, Ci ≤ 20 pF.
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Figure 1. Switching Times
TYPICAL CHARACTERISTICS
POWER SUPPLY REJECTION RATIO
vs
FREQUENCY
PHOTODIODE SPECTRAL RESPONSIVITY
TA = 25°C
0.6
0.4
ca
Relative Responsivity
0.8
ni
0.2
400
500
70
60
50
40
30
20
10
0
ch
0
300
80
Power Supply Rejection Ratio — dB
1
600 700 800 900
λ − Wavelength − nm
1000 1100
10
102
105
106
Figure 3
Te
Figure 2
103
104
f − Frequency − Hz
The LUMENOLOGY r Company
Copyright E 2007, TAOS Inc.
r
www.taosinc.com
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3
TSL257T
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS065B − APRIL 2007
TYPICAL CHARACTERISTICS
DARK VOLTAGE
vs
FREE-AIR TEMPERATURE
10
VDD = 5 V
9
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7
6
5
lv
V D− Dark Voltage − mV
8
4
3
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2
1
0
0
10
20
40
60
30
50
TA − Free-Air Temperature − °C
70
Figure 4
NORMALIZED OUTPUT VOLTAGE
vs.
ANGULAR DISPLACEMENT
ca
0.6
0.2
ni
0.4
-Q
−60
Copyright E 2007, TAOS Inc.
4
+Q
−30
0
30
60
Q − Angular Displacement − °
Te
0
−90
90
0.8
Optical Axis
Optical Axis
0.8
VO — Output Voltage — Normalized
1
ch
VO — Output Voltage — Normalized
1
NORMALIZED OUTPUT VOLTAGE
vs.
ANGULAR DISPLACEMENT
0.6
0.4
0.2
0
−90
-Q
−60
+Q
−30
0
30
60
Q − Angular Displacement − °
Figure 5
90
Figure 6
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TSL257T
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS065B − APRIL 2007
APPLICATION INFORMATION
PCB Pad Layout
Suggested PCB pad layout guidelines for the T package are shown in Figure 7.
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2.90
lv
1.50
0.90
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1.00
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
Te
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Figure 7. Suggested T Package PCB Layout
The LUMENOLOGY r Company
Copyright E 2007, TAOS Inc.
r
www.taosinc.com
r
5
TSL257T
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS065B − APRIL 2007
MECHANICAL DATA
The TSL257T is supplied in a low-profile surface-mount package. This package contains no lead (Pb).
PACKAGE T
Four-Lead Surface Mount Device
TOP VIEW
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1.89
lv
2.60
1.0
3.80
Photodiode
(Note C)
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DETAIL A: TYPICAL PACKAGE TERMINAL
0.10
SIDE VIEW
3.10
0.35
7
ÎÎÎ
ÈÈÈÈÈÈÈÈ
ÎÎÎ
ÈÈÈÈÈÈÈÈ
1.35
0.90
0.40
0.45
0.80
R 0.20
0.50
BOTTOM VIEW
A
ca
1.50
Pb
Lead Free
0.55
All linear dimensions are in millimeters.
Terminal finish is gold.
The center of the 0.75 mm diameter integrated photodiode active area is typically located 0.1 mm above the center of the package.
Dimension tolerance is ± 0.15 mm.
This drawing is subject to change without notice.
ch
NOTES: A.
B.
C.
D.
E.
ni
PIN 1
Te
Figure 8. Package T — Four-Lead Surface Mount Device Packaging Configuration
Copyright E 2007, TAOS Inc.
6
The LUMENOLOGY r Company
r
www.taosinc.com
r
TSL257T
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS065B − APRIL 2007
MECHANICAL DATA
2.10
0.30 0.050
SIDE VIEW
B
1.50
4 0.100
8 Typ
2 0.100
TOP VIEW
12 0.100
1.50
R 0.20 TYP
B
A
lv
5.50
0.100
END VIEW
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1.75 0.100
A
2.90 0.100 Ao
3.09 MAX
ni
4.10 0.100 Bo
1.80 Ko
ch
Te
NOTES: A.
B.
C.
D.
E.
F.
G.
R 0.20 TYP
4.29 MAX
ca
R 0.20 TYP
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DETAIL B
DETAIL A
All linear dimensions are in millimeters.
The dimensions on this drawing are for illustrative purposes only. Dimensions of an actual carrier may vary slightly.
Symbols on drawing Ao, Bo, and Ko are defined in ANSI EIA Standard 481−B 2001.
Each reel is 178 millimeters in diameter and contains 1000 parts.
TAOS packaging tape and reel conform to the requirements of EIA Standard 481−B.
In accordance with EIA standard, device pin 1 is located next to the sprocket holes in the tape.
This drawing is subject to change without notice.
Figure 9. Four Lead Surface Mount Package Carrier Tape
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Copyright E 2007, TAOS Inc.
r
www.taosinc.com
r
7
TSL257T
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS065B − APRIL 2007
MANUFACTURING INFORMATION
The reflow profile specified here describes expected maximum heat exposure of devices during the solder
reflow process of the device on a PWB. Temperature is measured at the top of the device. Devices should be
limited to one pass through the solder reflow profile.
Table 1. TSL257T Solder Reflow Profile
REFERENCE
TSL257T
tsoak
2 to 3 minutes
Time above T1, 217°C
t1
Max 60 sec
Time above T2, 230°C
t2
Max 50 sec
Time above T3, (Tpeak −10°C)
t3
Max 10 sec
Tpeak
260° C (−0°C/+5°C)
Peak temperature in reflow
lv
Soak time
2.5°C/sec
Max −5°C/sec
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Temperature gradient in cooling
Tpeak
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PARAMETER
Average temperature gradient in preheating
Not to scale — for reference only
T3
T2
Temperature (C)
T1
Time (sec)
t3
ca
t2
tsoak
t1
Te
ch
ni
Figure 10. TSL257T Solder Reflow Profile
Copyright E 2007, TAOS Inc.
8
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r
www.taosinc.com
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TSL257T
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS065B − APRIL 2007
MANUFACTURING INFORMATION
Moisture Sensitivity
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Optical characteristics of the device can be adversely affected during the soldering process by the release and
vaporization of moisture that has been previously absorbed into the package molding compound. To ensure the
package molding compound contains the smallest amount of absorbed moisture possible, each device is
dry−baked prior to being packed for shipping. Devices are packed in a sealed aluminized envelope with silica
gel to protect them from ambient moisture during shipping, handling, and storage before use.
This package has been assigned a moisture sensitivity level of MSL 3 and the devices should be stored under
the following conditions:
5°C to 50°C
60% maximum
6 months from the date code on the aluminized envelope — if unopened
168 hours or fewer
lv
Temperature Range
Relative Humidity
Total Time
Opened Time
Te
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Rebaking will be required if the devices have been stored unopened for more than 6 months or if the aluminized
envelope has been open for more than 168 hours. If rebaking is required, it should be done at 90°C for 4 hours.
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TSL257T
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS065B − APRIL 2007
PRODUCTION DATA — information in this document is current at publication date. Products conform to
specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard
warranty. Production processing does not necessarily include testing of all parameters.
LEAD-FREE (Pb-FREE) and GREEN STATEMENT
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Pb-Free (RoHS) TAOS’ terms Lead-Free or Pb-Free mean semiconductor products that are compatible with the current
RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous
materials. Where designed to be soldered at high temperatures, TAOS Pb-Free products are suitable for use in specified
lead-free processes.
Green (RoHS & no Sb/Br) TAOS defines Green to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and
Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material).
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Important Information and Disclaimer The information provided in this statement represents TAOS’ knowledge and
belief as of the date that it is provided. TAOS bases its knowledge and belief on information provided by third parties,
and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate
information from third parties. TAOS has taken and continues to take reasonable steps to provide representative
and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and
chemicals. TAOS and TAOS suppliers consider certain information to be proprietary, and thus CAS numbers and other
limited information may not be available for release.
NOTICE
Texas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this
document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised
to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems.
TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product
design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that
the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular
purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any
and all liability, including without limitation consequential or incidental damages.
ca
TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR
USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY
RESULT IN PERSONAL INJURY OR DEATH. USE OF TAOS PRODUCTS IN LIFE SUPPORT SYSTEMS IS EXPRESSLY
UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMER’S RISK.
Te
ch
ni
LUMENOLOGY, TAOS, the TAOS logo, and Texas Advanced Optoelectronic Solutions are registered trademarks of Texas Advanced
Optoelectronic Solutions Incorporated.
Copyright E 2007, TAOS Inc.
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