GD25Q16BxIGx (Uniform sector dual and quad serial flash)

GD25Q16B
DATASHEET
48 - 1
Rev.1.1
Uniform Sector Uniform sector dual and quad serial flash
GD25Q16BxIGx
Dual and Quad Serial Flash
GD25Q16B
Contents
1.
FEATURES.......................................................................................................................................................... 44
2.
GENERAL DESCRIPTION ..................................................................................................................................... 5
5
3.
MEMORY ORGANIZATION ................................................................................................................................. 77
4.
DEVICE OPERATION ........................................................................................................................................... 88
5.
DATA PROTECTION ............................................................................................................................................ 99
6.
STATUS REGISTER ............................................................................................................................................ 11
11
7.
COMMANDS DESCRIPTION .............................................................................................................................. 13
13
8.
7.1.
WRITE ENABLE (WREN) (06H)................................................................................................................................ 16
16
7.2.
WRITE DISABLE (WRDI) (04H) ................................................................................................................................ 16
16
7.3.
READ STATUS REGISTER (RDSR) (05H OR 35H) .......................................................................................................... 16
16
7.4.
WRITE STATUS REGISTER (WRSR) (01H) ................................................................................................................... 17
17
7.5.
READ DATA BYTES (READ) (03H)............................................................................................................................. 17
17
7.6.
READ DATA BYTES AT HIGHER SPEED (FAST READ) (0BH).............................................................................................. 18
18
7.7.
DUAL OUTPUT FAST READ (3BH).............................................................................................................................. 18
18
7.8.
QUAD OUTPUT FAST READ (6BH) ............................................................................................................................. 19
19
7.9.
DUAL I/O FAST READ (BBH) .................................................................................................................................... 19
19
7.10.
QUAD I/O FAST READ (EBH) ............................................................................................................................... 21
21
7.11.
QUAD I/O WORD FAST READ (E7H) ..................................................................................................................... 22
22
7.12.
PAGE PROGRAM (PP) (02H)................................................................................................................................ 22
22
7.13.
QUAD PAGE PROGRAM (32H).............................................................................................................................. 23
23
7.14.
SECTOR ERASE (SE) (20H)................................................................................................................................... 24
24
7.15.
32KB BLOCK ERASE (BE) (52H)........................................................................................................................... 25
25
7.16.
64KB BLOCK ERASE (BE) (D8H) .......................................................................................................................... 25
25
7.17.
CHIP ERASE (CE) (60/C7H)................................................................................................................................. 26
26
7.18.
DEEP POWER-DOWN (DP) (B9H)......................................................................................................................... 26
26
7.19.
RELEASE FROM DEEP POWER-DOWN OR HIGH PERFORMANCE MODE AND READ DEVICE ID (RDI) (ABH).......................... 27
27
7.20.
READ MANUFACTURE ID/ DEVICE ID (REMS) (90H) ............................................................................................... 28
28
7.21.
READ MANUFACTURE ID/ DEVICE ID DUAL I/O (92H) ............................................................................................. 28
28
7.22.
READ MANUFACTURE ID/ DEVICE ID QUAD I/O (94H) ............................................................................................ 29
29
7.23.
READ IDENTIFICATION (RDID) (9FH)..................................................................................................................... 30
30
7.24.
HIGH PERFORMANCE MODE (HPM) (A3H)............................................................................................................ 31
31
7.25.
CONTINUOUS READ MODE RESET (CRMR) (FFH) ................................................................................................... 31
31
7.26.
PROGRAM/ERASE SUSPEND (PES) (75H)............................................................................................................... 32
32
7.27.
PROGRAM/ERASE RESUME (PER) (7AH) ............................................................................................................... 32
32
7.28.
ERASE SECURITY REGISTERS (44H) ........................................................................................................................ 33
33
7.29.
PROGRAM SECURITY REGISTERS (42H)................................................................................................................... 34
34
7.30.
READ SECURITY REGISTERS (48H) ......................................................................................................................... 35
35
ELECTRICAL CHARACTERISTICS......................................................................................................................... 36
36
2
48 - 2
Rev.1.1
GD25Q16BxIGx Uniform sector dual and quad serial flash
Uniform Sector
Dual and Quad Serial Flash
GD25Q16B
8.1.
POWER-ON TIMING ........................................................................................................................................... 36
36
8.2.
INITIAL DELIVERY STATE..................................................................................................................................... 36
36
8.3.
DATA RETENTION AND ENDURANCE ................................................................................................................. 36
36
8.4.
LATCH UP CHARACTERISTICS ............................................................................................................................. 36
36
8.5.
ABSOLUTE MAXIMUM RATINGS ........................................................................................................................ 37
37
8.6.
CAPACITANCE MEASUREMENT CONDITIONS .................................................................................................... 37
37
8.7.
DC CHARACTERISTIC .......................................................................................................................................... 38
38
8.8.
AC CHARACTERISTICS......................................................................................................................................... 39
39
ORDERING INFORMATION ............................................................................................................................... 41
41
9.
10.
PACKAGE INFORMATION ............................................................................................................................. 42
42
10.1.
PACKAGE SOP8 150MIL .................................................................................................................................... 42
42
10.2.
PACKAGE SOP8 208MIL .................................................................................................................................... 43
43
10.3.
PACKAGE TSOP8 208MIL .................................................................................................................................. 44
44
10.4.
PACKAGE DIP8 300MIL ..................................................................................................................................... 45
45
10.5.
PACKAGE SOP16 300MIL .................................................................................................................................. 46
46
10.6.
PACKAGE WSON8 (6*5MM) .............................................................................................................................. 47
47
10.7.
PACKAGE TFBGA-24BALL.................................................................................................................................. 48
48
48 3- 3
Rev.1.1
Uniform Sector Uniform sector dual and quad serial flash
GD25Q16BxIGx
Dual and Quad Serial Flash
GD25Q16B
1. FEATURES
�
16M-bit Serial Flash
� Program/Erase
Speed
-2048K-byte
-Page Program time: 0.7ms typical
-256 bytes per programmable page
-Sector Erase time: 100ms typical
-Block Erase time: 0.2/0.4s typical
-Chip Erase time: 10s typical
�
Standard, Dual, Quad SPI
-Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#
�
Flexible Architecture
-Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD#
-Sector of 4K-byte
-Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3
-Block of 32/64k-byte
� Low
�
Power Consumption
High Speed Clock Frequency
-20mA maximum active current
-120MHz for fast read with 30PF load
-5uA maximum power down current
-Dual I/O Data transfer up to 240Mbits/s
-Quad I/O Data transfer up to 480Mbits/s
�
Advanced security Features(1)
-16-Bit Customer ID
-4*256-Byte Security Registers With OTP Lock
� Software/Hardware
Write Protection
-Write protect all/portion of memory via software
�
-Enable/Disable protection with WP# Pin
Single Power Supply Voltage
-Full voltage range:2.7~3.6V
-Top or Bottom, Sector or Block selection
�
�
Minimum 100,000 Program/Erase Cycles
Package Information
-SOP8 (150mil)
-SOP8 (208mil)
�
Typical 10 years Data Retention
-TSOP8 (208mil)
-SOP16 (300mil)
-DIP8 (300mil)
- WSON8 (6*5mm)
-TFBGA24 (6*4 ball array)
4
48 - 4
Rev.1.1
Uniform Sector
Dual and Quad Serial Flash
GD25Q16B
GD25Q16BxIGx Uniform sector dual and quad serial flash
2. GENERAL DESCRIPTION
The GD25Q16B (16M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and supports the
Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), and I/O3 (HOLD#). The Dual I/O
data is transferred with speed of 240Mbits/s and the Quad I/O & Quad output data is transferred with speed of
480Mbits/s.
CONNECTION DIAGRAM
8
VCC
CS#
1
7
HOLD#
SO
2
3
6
SCLK
WP# 3
6 SCLK
4
5
SI
VSS 4
5
CS#
1
SO
2
WP#
VSS
Top View
8–LEAD SOP/DIP
Top View
8
VCC
7
HOLD#
SI
8–LEAD WSON
Top View
4
NC
VCC
WP# HOLD# NC
NC
NC
VSS
NC
SI
NC
NC
NC
SCLK CS#
SO
NC
NC
3
2
1
NC
NC
NC
NC
NC
NC
A
B
C
D
E
F
24-BALL TFBGA
PIN DESCRIPTION
Pin Name
I/O
Description
CS#
I
Chip Select Input
SO (IO1)
I/O
Data Output (Data Input Output 1)
WP# (IO2)
I/O
Write Protect Input (Data Input Output 2)
VSS
SI (IO0)
SCLK
HOLD# (IO3)
Ground
Uniform Sector
Data Input (Data Input Output 0)
I/O
Dual
and Quad Serial Flash
I
Serial Clock Input
I/O
Hold Input (Data Input Output 3)
GD25Q16B
Power Supply
VCC
5
BLOCK DIAGRAM
Write Control
Logic
Rev.1.1
48 - 5
Status
Register
ogic
ode
WP#(IO2)
Uniform Sector
Dual and Quad Serial Flash
GD25Q16B
Hold Input (Data Input Output 3)
I/O
Uniform sector dual and quad serial flash
GD25Q16BxIGx
Power Supply
HOLD# (IO3)
VCC
BLOCK DIAGRAM
Write Control
Logic
Status
Register
HOLD#(IO3)
SCLK
CS#
SPI
Command &
Control Logic
High Voltage
Generators
Page Address
Latch/Counter
Write Protect Logic
and Row Decode
WP#(IO2)
Flash
Memory
Column Decode And
256-Byte Page Buffer
SI(IO0)
SO(IO1)
Byte Address
Latch/Counter
6
48 - 6
Rev.1.1
Uniform Sector Uniform sector dual and quad serial flash
GD25Q16BxIGx
Dual and Quad Serial Flash
GD25Q16B
3. MEMORY ORGANIZATION
GD25Q16B
Each device has
Each block has
Each sector has
Each page has
2M
64/32K
4K
256
bytes
8K
256/128
16
-
pages
512
16/8
-
-
sectors
32/64
-
-
-
blocks
UNIFORM BLOCK SECTOR ARCHITECTURE
GD25Q16B 64K Bytes Block Sector Architecture
Block
31
30
……
……
2
1
0
Sector
Address range
511
1FF000H
1FFFFFH
……
……
……
496
1F0000H
1F0FFFH
495
1EF000H
1EFFFFH
……
……
……
480
1E0000H
1E0FFFH
……
……
……
……
……
……
……
……
……
……
……
……
……
……
……
……
……
……
47
02F000H
02FFFFH
……
……
……
32
020000H
020FFFH
31
01F000H
01FFFFH
……
……
……
16
010000H
010FFFH
15
00F000H
00FFFFH
……
……
……
0
000000H
000FFFH
7
48 - 7
Rev.1.1
Uniform Sector Uniform sector dual and quad serial flash
GD25Q16BxIGx
Dual and Quad Serial Flash
GD25Q16B
4. DEVICE OPERATION
SPI Mode
Standard SPI
The GD25Q16B features a serial peripheral interface on 4 signals bus: Serial Clock (SCLK), Chip Select (CS#),
Serial Data Input (SI) and Serial Data Output (SO). Both SPI bus mode 0 and 3 are supported. Input data is latched on the
rising edge of SCLK and data shifts out on the falling edge of SCLK.
Dual SPI
The GD25Q16B supports Dual SPI operation when using the “Dual Output Fast Read” and “Dual I/O Fast Read”
(3BH and BBH) commands. These commands allow data to be transferred to or from the device at two times the rate of the
standard SPI. When using the Dual SPI command the SI and SO pins become bidirectional I/O pins: IO0 and IO1.
Quad SPI
The GD25Q16B supports Quad SPI operation when using the “Quad Output Fast Read”,” Quad I/O Fast Read”,
“Quad I/O Word Fast Read” (6BH, EBH, E7H) commands. These commands allow data to be transferred to or from the
device at four times the rate of the standard SPI. When using the Quad SPI command the SI and SO pins become
bidirectional I/O pins: IO0 and IO1, and WP# and HOLD# pins become IO2 and IO3. Quad SPI commands require the
non-volatile Quad Enable bit (QE) in Status Register to be set.
Hold
The HOLD# signal goes low to stop any serial communications with the device, but doesn’t stop the operation of write
status register, programming, or erasing in progress.
The operation of HOLD, need CS# keep low, and starts on falling edge of the HOLD# signal, with SCLK signal being
low (if SCLK is not being low, HOLD operation will not start until SCLK being low). The HOLD condition ends on rising edge
of HOLD# signal with SCLK being low (If SCLK is not being low, HOLD operation will not end until SCLK being low).
The SO is high impedance, both SI and SCLK don’t care during the HOLD operation, if CS# drives high during HOLD
operation, it will reset the internal logic of the device. To re-start communication with chip, the HOLD# must be at high and
then CS# must be at low.
Figure 1. Hold Condition
CS#
SCLK
HOLD#
HOLD
HOLD
8
48 - 8
Rev.1.1
Uniform Sector Uniform sector dual and quad serial flash
GD25Q16BxIGx
Dual and Quad Serial Flash
GD25Q16B
5. DATA PROTECTION
The GD25Q16B provide the following data protection methods:
�
Write Enable (WREN) command: The WREN command is set the Write Enable Latch bit (WEL). The WEL bit will
return to reset by the following situation:
-Power-Up
-Write Disable (WRDI)
-Write Status Register (WRSR)
-Page Program (PP)
-Sector Erase (SE) / Block Erase (BE) / Chip Erase (CE)
�
Software Protection Mode: The Block Protect (BP4, BP3, BP2, BP1, BP0) bits define the section of the memory
array that can be read but not change.
�
Hardware Protection Mode: WP# going low to protected the BP0~BP4 bits and SRP0~1 bits.
�
Deep Power-Down Mode: In Deep Power-Down Mode, all commands are ignored except the Release from Deep
Power-Down Mode command.
Table1.0 GD25Q16B Protected area size (CMP=0)
Status Register Content
Memory Content
BP4
BP3
BP2
BP1
BP0
Blocks
Addresses
Density
Portion
X
X
0
0
0
NONE
NONE
NONE
NONE
0
0
0
0
1
31
1F0000H-1FFFFFH
64KB
Upper 1/32
0
0
0
1
0
30 to 31
1E0000H-1FFFFFH
128KB
Upper 1/16
0
0
0
1
1
28 to 31
1C0000H-1FFFFFH
256KB
Upper 1/8
0
0
1
0
0
24 to 31
180000H-1FFFFFH
512KB
Upper 1/4
0
0
1
0
1
16 to 31
100000H-1FFFFFH
1M
Upper 1/2
0
1
0
0
1
0
000000H-00FFFFH
64KB
Lower 1/32
0
1
0
1
0
0 to 1
000000H-01FFFFH
128KB
Lower 1/16
0
1
0
1
1
0 to 3
000000H-03FFFFH
256KB
Lower 1/8
0
1
1
0
0
0 to 7
000000H-07FFFFH
512KB
Lower 1/4
0
1
1
0
1
0 to 15
000000H-0FFFFFH
1M
Lower 1/2
X
X
1
1
X
0 to 31
000000H-1FFFFFH
2M
ALL
1
0
0
0
1
31
1FF000H-1FFFFFH
4KB
Top Block
1
0
0
1
0
31
1FE000H-1FFFFFH
8KB
Top Block
1
0
0
1
1
31
1FC000H-1FFFFFH
16KB
Top Block
1
0
1
0
X
31
1F8000H-1FFFFFH
32KB
Top Block
1
1
0
0
1
0
000000H-000FFFH
4KB
Bottom Block
1
1
0
1
0
0
000000H-001FFFH
8KB
Bottom Block
1
1
0
1
1
0
000000H-003FFFH
16KB
Bottom Block
1
1
1
0
X
0
000000H-007FFFH
32KB
Bottom Block
9
48 - 9
Rev.1.1
GD25Q16BxIGx Uniform sector dual and quad serial flash
Uniform Sector
Dual and Quad Serial Flash
GD25Q16B
Table1.1 GD25Q16B Protected area size (CMP=1)
Status Register Content
Memory Content
BP4
BP3
BP2
BP1
BP0
Blocks
Addresses
Density
Portion
X
X
0
0
0
0 to 31
000000H-1FFFFFH
2M
ALL
0
0
0
0
1
0 to 30
000000H-1EFFFFH
1984KB
Lower 31/32
0
0
0
1
0
0 to 29
000000H-1DFFFFH
1920KB
Lower 15/16
0
0
0
1
1
0 to 27
000000H-1BFFFFH
1792KB
Lower 7/8
0
0
1
0
0
0 to 23
000000H-17FFFFH
1536KB
Lower 3/4
0
0
1
0
1
0 to 15
000000H-0FFFFFH
1M
Lower 1/2
0
1
0
0
1
1 to 31
010000H-1FFFFFH
1984KB
Upper 31/32
0
1
0
1
0
2 to 31
020000H-1FFFFFH
1920KB
Upper 15/16
0
1
0
1
1
4 to 31
040000H-1FFFFFH
1792KB
Upper 7/8
0
1
1
0
0
8 to 31
080000H-1FFFFFH
1536KB
Upper 3/4
0
1
1
0
1
16 to 31
100000H-1FFFFFH
1M
Upper 1/2
X
X
1
1
X
NONE
NONE
NONE
NONE
1
0
0
0
1
0 to 31
000000H-1FEFFFH
2044KB
Lower 511/512
1
0
0
1
0
0 to 31
000000H-1FDFFFH
2040KB
Lower 255/256
1
0
0
1
1
0 to 31
000000H-1FBFFFH
2032KB
Lower 127/128
1
0
1
0
X
0 to 31
000000H-1F7FFFH
2016KB
Lower 63/64
1
1
0
0
1
0 to 31
001000H-1FFFFFH
2044KB
Upper 511/512
1
1
0
1
0
0 to 31
002000H-1FFFFFH
2040KB
Upper 255/256
1
1
0
1
1
0 to 31
004000H-1FFFFFH
2032KB
Upper 127/128
1
1
1
0
X
0 to 31
008000H-1FFFFFH
2016KB
Upper 63/64
48 10
- 10
Rev.1.1
Uniform Sector Uniform sector dual and quad serial flash
GD25Q16BxIGx
Dual and Quad Serial Flash
GD25Q16B
6. STATUS REGISTER
S15
S14
S13
S12
S11
S10
S9
S8
SUS
CMP
Reserved
Reserved
Reserved
LB
QE
SRP1
S7
S6
S5
S4
S3
S2
S1
S0
SRP0
BP4
BP3
BP2
BP1
BP0
WEL
WIP
The status and control bits of the Status Register are as follows:
WIP bit.
The Write In Progress (WIP) bit indicates whether the memory is busy in program/erase/write status register progress.
When WIP bit sets to 1, means the device is busy in program/erase/write status register progress, when WIP bit sets 0,
means the device is not in program/erase/write status register progress.
WEL bit.
The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch. When set to 1 the internal
Write Enable Latch is set, when set to 0 the internal Write Enable Latch is reset and no Write Status Register, Program or
Erase command is accepted.
BP4, BP3, BP2, BP1, BP0 bits.
The Block Protect (BP4, BP3, BP2, BP1, BP0) bits are non-volatile. They define the size of the area to be software
protected against Program and Erase commands. These bits are written with the Write Status Register (WRSR) command.
When the Block Protect (BP4, BP3, BP2, BP1, BP0) bits are set to 1, the relevant memory area (as defined in
Table1).becomes protected against Page Program (PP), Sector Erase (SE) and Block Erase (BE) commands. The Block
Protect (BP4, BP3, BP2, BP1, BP0) bits can be written provided that the Hardware Protected mode has not been set. The
Chip Erase (CE) command is executed, if the Block Protect (BP2, BP1, BP0) bits are “000” when CMP=0, or “110/111”
when CMP=1.
SRP1, SRP0 bits.
The Status Register Protect (SRP1 and SRP0) bits are non-volatile Read/Write bits in the status register. The SRP
bits control the method of write protection: software protection, hardware protection, power supply lock-down or one time
programmable protection.
SRP1
SRP0
#WP
Status Register
0
0
X
Software Protected
0
1
0
Hardware Protected
0
1
1
Hardware Unprotected
1
0
X
Power Supply Lock-Down(1)
1
1
X
One Time Program
Description
The Status Register can be written to after a Write Enable
command, WEL=1.(Default)
WP#=0, the Status Register locked and can not be written to.
WP#=1, the Status Register is unlocked and can be written to
after a Write Enable command, WEL=1.
Status Register is protected and can not be written to again
until the next Power-Down, Power-Up cycle.
Status Register is permanently protected and can not be
written to.
NOTE:
1. When SRP1, SRP0= (1, 0), a Power-Down, Power-Up cycle will change SRP1, SRP0 to (0, 0) state.
11
48 - 11
Rev.1.1
GD25Q16BxIGx Uniform sector dual and quad serial flash
Uniform Sector
Dual and Quad Serial Flash
GD25Q16B
QE bit.
The Quad Enable (QE) bit is a non-volatile Read/Write bit in the Status Register that allows Quad operation. When
the QE bit is set to 0 (Default) the WP# pin and HOLD# pin are enable. When the QE pin is set to 1, the Quad IO2 and IO3
pins are enabled. (The QE bit should never be set to 1 during standard SPI or Dual SPI operation if the WP# or HOLD#
pins are tied directly to the power supply or ground)
LB bit.
The LB bit is a non-volatile One Time Program (OTP) bit in Status Register (S10) that provide the write protect control
and status to the Security Registers. The default state of LB is 0, the security registers are unlocked. LB can be set to 1
individually using the Write Register instruction. LB is One Time Programmable, once it’s set to 1, the Security Registers
will become read-only permanently.
CMP bit
The CMP bit is a non-volatile Read/Write bit in the Status Register (S14). It is used in conjunction the BP4-BP0 bits to
provide more flexibility for the array protection. Please see the Status registers Memory Protection table for details. The
default setting is CMP=0.
SUS bit
The SUS bit is a read only bit in the status register (S15 ) that is set to 1 after executing an Erase/Program Suspend
(75H) command. The SUS bit is cleared to 0 by Erase/Program Resume (7AH) command as well as a power-down,
power-up cycle.
4812- 12
Rev.1.1
Uniform Sector
Uniform
sector dual and quad serial
flash
GD25Q16BxIGx
Dual and Quad Serial
Flash
GD25Q16B
7. COMMANDS DESCRIPTION
All commands, addresses and data are shifted in and out of the device, beginning with the most significant bit on the
first rising edge of SCLK after CS# is driven low. Then, the one-byte command code must be shifted in to the device, most
significant bit first on SI, each bit being latched on the rising edges of SCLK.
See Table2, every command sequence starts with a one-byte command code. Depending on the command, this
might be followed by address bytes, or by data bytes, or by both or none. CS# must be driven high after the last bit of the
command sequence has been shifted in. For the command of Read, Fast Read, Read Status Register or Release from
Deep Power-Down, and Read Device ID, the shifted-in command sequence is followed by a data-out sequence. CS# can
be driven high after any bit of the data-out sequence is being shifted out.
For the command of Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register, Write Enable,
Write Disable or Deep Power-Down command, CS# must be driven high exactly at a byte boundary, otherwise the
command is rejected, and is not executed. That is CS# must driven high when the number of clock pulses after CS# being
driven low is an exact multiple of eight. For Page Program, if at any time the input byte is not a full byte, nothing will happen
and WEL will not be reset.
Table2. Commands
Command Name
Byte 1
Byte 2
Write Enable
Write Disable
Read Status Register
Read Status Register-1
Write Status Register
Read Data
Fast Read
Dual Output
Fast Read
Dual I/O
Fast Read
Quad Output
Fast Read
Quad I/O
Fast Read
Quad I/O Word
Fast Read(7)
Continuous Read Reset
Page Program
Quad Page Program
Sector Erase
Block Erase(32K)
Block Erase(64K)
Chip Erase
Program/Erase
Suspend
Program/Erase Resume
Deep Power-Down
Release From Deep
Power-Down, And
Read Device ID
Release From Deep
Power-Down
06H
04H
05H
35H
01H
03H
0BH
3BH
(S7-S0)
(S15-S8)
(S7-S0)
A23-A16
A23-A16
A23-A16
BBH
A23-A8(2)
6BH
A23-A16
EBH
E7H
FFH
02 H
32H
20H
52H
D8H
C7/60 H
75H
7AH
B9H
ABH
Byte 3
Byte 4
Byte 5
Byte 6
n-Bytes
(continuous)
(continuous)
(S15-S8)
A15-A8
A15-A8
A15-A8
A7-A0
A7-A0
A7-A0
(D7-D0)
dummy
dummy
(Next byte)
(D7-D0)
(D7-D0)(1)
(D7-D0)(1)
(continuous)
(continuous)
(continuous)
A7-A0
M7-M0(2)
A15-A8
(continuous)
A7-A0
A23-A0
M7-M0(4)
A23-A0
M7-M0(4)
dummy(5)
(D7-D0)(3)
(continuous)
dummy(6)
(D7-D0)(3)
(continuous)
A23-A16
A23-A16
A23-A16
A23-A16
A23-A16
A15-A8
A15-A8
A15-A8
A15-A8
A15-A8
A7-A0
A7-A0
A7-A0
A7-A0
A7-A0
(D7-D0)
(D7-D0)(3)
dummy
dummy
dummy
(DID7DID0)
dummy
(D7-D0)(3)
(continuous)
Next byte
(continuous)
ABH
13
48 - 13
Rev.1.1
Uniform Sector Uniform sector dual and quad serial flash
GD25Q16BxIGx
Dual and Quad Serial Flash
Manufacturer/
Device ID
High Performance Mode
Manufacturer/
Device ID by Dual I/O
Manufacturer/
Device ID by Quad I/O
Read Identification
Erase Security
Registers(8)
Program Security
Registers(8)
Read Security
Registers(8)
NOTE:
1. Dual Output data
GD25Q16B
90H
dummy
dummy
00H
A3H
dummy
dummy
92H
A23-A8
A7-A0,
M7-M0
94H
A23-A0,
M7-M0
dummy
44H
(MID7MID0)
A23-A16
(JDID15JDID8)
A15-A8
dummy
MID7MID0
DID7-DID0
MID7MID0
DID7-DID0
(JDID7JDID0)
A7-A0
42H
A23-A16
A15-A8
A7-A0
(D7-D0)
(D7-D0)
48H
A23-A16
A15-A8
A7-A0
dummy
(D7-D0)
9FH
(MID7MID0)
(DID7DID0)
(continuous)
(continuous)
(continuous)
(continuous)
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1)
2. Dual Input Address
IO0 = A22, A20, A18, A16, A14, A12, A10, A8
A6, A4, A2, A0, M6, M4, M2, M0
IO1 = A23, A21, A19, A17, A15, A13, A11, A9
A7, A5, A3, A1, M7, M5, M3, M1
3. Quad Output Data
IO0 = (D4, D0, …..)
IO1 = (D5, D1, …..)
IO2 = (D6, D2, …..)
IO3 = (D7, D3,…..)
4. Quad Input Address
IO0 = A20, A16, A12, A8,
A4, A0, M4, M0
IO1 = A21, A17, A13, A9,
A5, A1, M5, M1
IO2 = A22, A18, A14, A10, A6, A2, M6, M2
IO3 = A23, A19, A15, A11, A7, A3, M7, M3
5. Fast Read Quad I/O Data
IO0 = (x, x, x, x, D4, D0,…)
IO1 = (x, x, x, x, D5, D1,…)
IO2 = (x, x, x, x, D6, D2,…)
IO3 = (x, x, x, x, D7, D3,…)
6. Fast Word Read Quad I/O Data
IO0 = (x, x, D4, D0,…)
IO1 = (x, x, D5, D1,…)
IO2 = (x, x, D6, D2,…)
IO3 = (x, x, D7, D3,…)
7. Fast Word Read Quad I/O Data: the lowest address bit must be 0.
8. Security Registers Address:
Security Register0: A23-A16=00H, A15-A8=00H, A7-A0= Byte Address;
Security Register1: A23-A16=00H, A15-A8=01H, A7-A0= Byte Address;
14
48 - 14
Rev.1.1
GD25Q16BxIGx Uniform sector dual and quad serial flash
Uniform Sector
Dual and Quad Serial Flash
GD25Q16B
Security Register2: A23-A16=00H, A15-A8=02H, A7-A0= Byte Address;
Security Register3: A23-A16=00H, A15-A8=03H, A7-A0= Byte Address.
Table of ID Definitions:
GD25Q16B
Operation Code
M7-M0
ID15-ID8
ID7-ID0
9FH
C8
40
15
90H
C8
14
ABH
14
4815- 15
Rev.1.1
GD25Q16BxIGx
Uniform Sector Uniform sector dual and quad serial flash
Dual and Quad Serial Flash
GD25Q16B
7.1. Write Enable (WREN) (06H)
The Write Enable (WREN) command is for setting the Write Enable Latch (WEL) bit. The Write Enable Latch (WEL)
bit must be set prior to every Page Program (PP), Sector Erase (SE), Block Erase (BE), Chip Erase (CE) and Write Status
Register (WRSR) command. The Write Enable (WREN) command sequence: CS# goes low � sending the Write Enable
command � CS# goes high.
Figure 2. Write Enable Sequence Diagram
CS#
1
0
SCLK
2
3
4
5
6
7
Command
SI
06H
High-Z
SO
7.2. Write Disable (WRDI) (04H)
The Write Disable command is for resetting the Write Enable Latch (WEL) bit. The Write Disable command sequence:
CS# goes low�Sending the Write Disable command �CS# goes high. The WEL bit is reset by following condition:
Power-up and upon completion of the Write Status Register, Page Program, Sector Erase, Block Erase and Chip Erase
commands.
Figure 3. Write Disable Sequence Diagram
CS#
1
0
SCLK
2
3
4
5
6
7
Command
SI
04H
High-Z
SO
7.3. Read Status Register (RDSR) (05H or 35H)
The Read Status Register (RDSR) command is for reading the Status Register. The Status Register may be read at
any time, even while a Program, Erase or Write Status Register cycle is in progress. When one of these cycles is in
progress, it is recommended to check the Write In Progress (WIP) bit before sending a new command to the device. It is
also possible to read the Status Register continuously. For command code “05H”, the SO will output Status Register bits
S7~S0. The command code “35H”, the SO will output Status Register bits S15~S8.
Figure 4. Read Status Register Sequence Diagram
CS#
SCLK
SI
SO
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
Command
05H or 35H
High-Z
7
S7~S0 or S15~S8 out
6 5 4 3 2 1 0
MSB
7
S7~S0 or S15~S8 out
6 5 4 3 2 1 0
7
MSB
16
48 - 16
Rev.1.1
GD25Q16BxIGx
Uniform Sector Uniform sector dual and quad serial flash
Dual and Quad Serial Flash
GD25Q16B
7.4. Write Status Register (WRSR) (01H)
The Write Status Register (WRSR) command allows new values to be written to the Status Register. Before it can be
accepted, a Write Enable (WREN) command must previously have been executed. After the Write Enable (WREN)
command has been decoded and executed, the device sets the Write Enable Latch (WEL).
The Write Status Register (WRSR) command has no effect on S15, S1 and S0 of the Status Register. CS# must be
driven high after the eighth or sixteen bit of the data byte has been latched in. If not, the Write Status Register (WRSR)
command is not executed. If CS# is driven high after eighth bit of the data byte, the CMP and QE and SRP1 bits will be
cleared to 0. As soon as CS# is driven high, the self-timed Write Status Register cycle (whose duration is tW) is initiated.
While the Write Status Register cycle is in progress, the Status Register may still be read to check the value of the Write In
Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is
completed. When the cycle is completed, the Write Enable Latch (WEL) is reset.
The Write Status Register (WRSR) command allows the user to change the values of the Block Protect (BP4, BP3,
BP2, BP1, BP0) bits, to define the size of the area that is to be treated as read-only, as defined in Table1. The Write Status
Register (WRSR) command also allows the user to set or reset the Status Register Protect (SRP1 and SRP0) bits in
accordance with the Write Protect (WP#) signal. The Status Register Protect (SRP1 and SRP0) bits and Write Protect
(WP#) signal allow the device to be put in the Hardware Protected Mode. The Write Status Register (WRSR) command is
not executed once the Hardware Protected Mode is entered.
Figure 5. Write Status Register Sequence Diagram
CS#
0
SCLK
1
2
3
4
5
6
7
8
Command
SI
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Status Register in
01H
7
6
MSB
SO
5
4
3
2
1
0 15 14 13 12 11 10 9
8
High-Z
7.5. Read Data Bytes (READ) (03H)
The Read Data Bytes (READ) command is followed by a 3-byte address (A23-A0), each bit being latched-in during
the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, each bit being shifted out, at a
Max frequency fR, during the falling edge of SCLK. The first byte addressed can be at any location. The address is
automatically incremented to the next higher address after each byte of data is shifted out. The whole memory can,
therefore, be read with a single Read Data Bytes (READ) command. Any Read Data Bytes (READ) command, while an
Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress.
Figure 6. Read Data Bytes Sequence Diagram
CS#
SCLK
SI
SO
0
1
2
3
4
5
6
7
8
24-bit address
Command
03H
High-Z
28 29 30 31 32 33 34 35 36 37 38 39
9 10
23 22 21
3
2
1
0
MSB
MSB
17
48 - 17
7
6
5
Data Out1
4 3 2
Data Out2
1
0
Rev.1.1
GD25Q16BxIGx
Uniform Sector Uniform sector dual and quad serial flash
Dual and Quad Serial Flash
GD25Q16B
7.6. Read Data Bytes at Higher Speed (Fast Read) (0BH)
The Read Data Bytes at Higher Speed (Fast Read) command is for quickly reading data out. It is followed by a 3-byte
address (A23-A0) and a dummy byte, each bit being latched-in during the rising edge of SCLK. Then the memory content,
at that address, is shifted out on SO, each bit being shifted out, at a Max frequency fC, during the falling edge of SCLK. The
first byte addressed can be at any location. The address is automatically incremented to the next higher address after each
byte of data is shifted out.
Figure 7. Read Data Bytes at Higher Speed Sequence Diagram
CS#
0
SCLK
1
2
3
4
5
6
8
7
9 10
24-bit address
Command
SI
28 29 30 31
23 22 21
0BH
3
1
2
0
High-Z
SO
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
SI
Dummy Byte
7
6
5
4
3
0
1
2
SO
7 6
MSB
Data Out1
5 4 3 2
0
1
Data Out2
7 6 5
MSB
7.7. Dual Output Fast Read (3BH)
The Dual Output Fast Read command is followed by 3-byte address (A23-A0) and a dummy byte, each bit being
latched in during the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO.
The command sequence is shown in followed Figure8. The first byte addressed can be at any location. The address is
automatically incremented to the next higher address after each byte of data is shifted out.
Figure 8. Dual Output Fast Read Sequence Diagram
CS#
SCLK
SI
SO
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
24-bit address
Command
3BH
23 22 21
3
2
1
0
High-Z
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
SI
SO
Dummy Clocks
0
6
Data Out2
Data Out1
7 5 3 1 7 5 3 1
MSB
MSB
7
6
18
4
2
48 - 18
0
6
4
2
Rev.1.1
GD25Q16BxIGx
Uniform Sector Uniform sector dual and quad serial flash
Dual and Quad Serial Flash
GD25Q16B
7.8. Quad Output Fast Read (6BH)
The Quad Output Fast Read command is followed by 3-byte address (A23-A0) and a dummy byte, each bit being
latched in during the rising edge of SCLK, then the memory contents are shifted out 4-bit per clock cycle from IO3, IO2, IO1
and IO0. The command sequence is shown in followed Figure9. The first byte addressed can be at any location. The
address is automatically incremented to the next higher address after each byte of data is shifted out.
Figure 9. Quad Output Fast Read Sequence Diagram
CS#
SCLK
0
1
2
3
4
5
6
8
7
9 10
24-bit address
Command
SI(IO0)
6BH
23 22 21
SO(IO1)
High-Z
WP#(IO2)
High-Z
HOLD#(IO3)
High-Z
CS#
SCLK
28 29 30 31
3
1
2
0
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Dummy Clocks
SI(IO0)
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7 3 7 3 7 3 7 3 7
Byte1 Byte2 Byte3 Byte4
7.9. Dual I/O Fast Read (BBH)
The Dual I/O Fast Read command is similar to the Dual Output Fast Read command but with the capability to input
the 3-byte address (A23-0) and a “Continuous Read Mode” byte 2-bit per clock by SI and SO, each bit being latched in
during the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO. The
command sequence is shown in followed Figure10. The first byte addressed can be at any location. The address is
automatically incremented to the next higher address after each byte of data is shifted out. To ensure optimum
performance the High Performance Mode (HPM) command (A3H) must be executed once, prior to the Dual I/O Fast Read
command.
Dual I/O Fast Read with “Continuous Read Mode”
The Dual I/O Fast Read command can further reduce command overhead through setting the “Continuous Read
Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M7-0) =AXH, then the next
Dual I/O Fast Read command (after CS# is raised and then lowered) does not require the BBH command code. The
command sequence is shown in followed Figure11. If the “Continuous Read Mode” bits (M7-0) are any value other than
AXH, the next command requires the first BBH command code, thus returning to normal operation. A “Continuous Read
Mode” Reset command can be used to reset (M7-0) before issuing normal command.
19
48 - 19
Rev.1.1
GD25Q16BxIGx Uniform sector dual and quad serial flash
Uniform Sector
Dual and Quad Serial Flash
GD25Q16B
Figure 10. Dual I/O Fast Read Sequence Diagram (M7-0= 0XH or not AXH)
CS#
1
0
SCLK
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
6
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
7
5
3
1
7
5
3
1
7
5
3
1
7
5
3
1
Command
SI(IO0)
BBH
SO(IO1)
A23-16
A15-8
A7-0
M7-0
CS#
SCLK
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39
SI(IO0)
6
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
6
SO(IO1)
7
5
3
1
7
5
3
1
7
5
3
1
7
5
3
1
7
Byte1
Byte2
Byte3
Byte4
Figure 11. Dual I/O Fast Read Sequence Diagram (M7-0= AXH)
CS#
SCLK
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
6
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
7
5
3
1
7
5
3
1
7
5
3
1
7
5
3
1
A23-16
A15-8
A7-0
M7-0
CS#
SCLK
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31
SI(IO0)
6
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
6
SO(IO1)
7
5
3
1
7
5
3
1
7
5
3
1
7
5
3
1
7
Byte1
Byte2
Byte3
4820- 20
Byte4
Rev.1.1
GD25Q16BxIGx
Uniform Sector Uniform sector dual and quad serial flash
Dual and Quad Serial Flash
GD25Q16B
7.10. Quad I/O Fast Read (EBH)
The Quad I/O Fast Read command is similar to the Dual I/O Fast Read command but with the capability to input the
3-byte address (A23-0) and a “Continuous Read Mode” byte and 4-dummy clock 4-bit per clock by IO0, IO1, IO3, IO4, each
bit being latched in during the rising edge of SCLK, then the memory contents are shifted out 4-bit per clock cycle from IO0,
IO1, IO2, IO3. The command sequence is shown in followed Figure12. The first byte addressed can be at any location. The
address is automatically incremented to the next higher address after each byte of data is shifted out. The Quad Enable bit
(QE) of Status Register (S9) must be set to enable for the Quad I/O Fast read command. To ensure optimum performance
the High Performance Mode (HPM) command (A3H) must be executed once, prior to the Quad I/O Fast Read command.
Quad I/O Fast Read with “Continuous Read Mode”
The Quad I/O Fast Read command can further reduce command overhead through setting the “Continuous Read
Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M7-0) =AXH, then the next
Quad I/O Fast Read command (after CS# is raised and then lowered) does not require the EBH command code. The
command sequence is shown in followed Figure13. If the “Continuous Read Mode” bits (M7-0) are any value other than
AXH, the next command requires the first EBH command code, thus returning to normal operation. A “Continuous Read
Mode” Reset command can be used to reset (M7-0) before issuing normal command.
Figure 12. Quad I/O Fast Read Sequence Diagram (M7-0= 0XH or not AXH)
CS#
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
4
0
4
0
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
0
SCLK
Command
SI(IO0)
EBH
A23-16 A15-8 A7-0 M7-0
Dummy
Byte1 Byte2
Figure 13. Quad I/O Fast Read Sequence Diagram (M7-0= AXH)
CS#
8
9 10 11 12 13 14 15
0
1
2
3
4
5
6
7
SI(IO0)
4
0
4
0
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
SCLK
A23-16 A15-8 A7-0 M7-0
21
48 - 21
Dummy
Byte1 Byte2
Rev.1.1
GD25Q16BxIGx
Uniform Sector Uniform sector dual and quad serial flash
Dual and Quad Serial Flash
GD25Q16B
7.11. Quad I/O Word Fast Read (E7H)
The Quad I/O Word Fast Read command is similar to the Quad I/O Fast Read command except that the lowest
address bit (A0) must equal 0 and only 2-dummy clock. The command sequence is shown in followed Figure14. The first
byte addressed can be at any location. The address is automatically incremented to the next higher address after each
byte of data is shifted out. The Quad Enable bit (QE) of Status Register (S9) must be set to enable for the Quad I/O Word
Fast read command. To ensure optimum performance the High Performance Mode (HPM) command (A3h) must be
executed once, prior to the Quad I/O Word Fast Read command.
Quad I/O Word Fast Read With “Continuous Read Mode”
The Quad I/O Word Fast Read command can further reduce command overhead through setting the “Continuous
Read Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M7-0) =AXH, then the
next Quad I/O Word Fast Read command (after CS# is raised and then lowered) does not require the E7H command code.
The command sequence is shown in followed Figure15. If the “Continuous Read Mode” bits (M7-0) are any value other
than AXH, the next command requires the first E7H command code, thus returning to normal operation. A “Continuous
Read Mode” Reset command can be used to reset (M7-0) before issuing normal command.
Figure 14. Quad I/O Word Fast Read Sequence Diagram (M7-0= 0XH or not AXH)
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
3
7
SCLK
Command
SI(IO0)
E7H
A23-16 A15-8 A7-0 M7-0 Dummy Byte1 Byte2 Byte3
Figure 15. Quad I/O Word Fast Read Sequence Diagram (M7-0= AXH)
CS#
0
1
2
3
4
5
6
7
SI(IO0)
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
3
7
SCLK
8
9 10 11 12 13 14 15
A23-16 A15-8 A7-0 M7-0 Dummy Byte1 Byte2 Byte3
7.12. Page Program (PP) (02H)
The Page Program (PP) command is for programming the memory. A Write Enable (WREN) command must
22
48 - 22
Rev.1.1
Uniform Sector Uniform sector dual and quad serial flash
GD25Q16BxIGx
Dual and Quad Serial Flash
GD25Q16B
previously have been executed to set the Write Enable Latch (WEL) bit before sending the Page Program command.
The Page Program (PP) command is entered by driving CS# Low, followed by the command code, three address
bytes and at least one data byte on SI. If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data
that goes beyond the end of the current page are programmed from the start address of the same page (from the address
whose 8 least significant bits (A7-A0) are all zero). CS# must be driven low for the entire duration of the sequence. The
Page Program command sequence: CS# goes low � sending Page Program command � 3-byte address on SI � at least
1 byte data on SI � CS# goes high. The command sequence is shown in Figure16. If more than 256 bytes are sent to the
device, previously latched data are discarded and the last 256 data bytes are guaranteed to be programmed correctly
within the same page. If less than 256 data bytes are sent to device, they are correctly programmed at the requested
addresses without having any effects on the other bytes of the same page. CS# must be driven high after the eighth bit of
the last data byte has been latched in; otherwise the Page Program (PP) command is not executed.
As soon as CS# is driven high, the self-timed Page Program cycle (whose duration is tPP) is initiated. While the Page
Program cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The
Write In Progress (WIP) bit is 1 during the self-timed Page Program cycle, and is 0 when it is completed. At some
unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset.
A Page Program (PP) command applied to a page which is protected by the Block Protect (BP4, BP3, BP2, BP1, BP0)
is not executed.
Figure 16. Page Program Sequence Diagram
CS#
5
6
7
8
9 10
Command
24-bit address
02H
3
23 22 21
2
Data Byte 1
1
0 7
MSB
6
5
4
3
2
1
2079
SI
28 29 30 31 32 33 34 35 36 37 38 39
2078
4
2077
3
2075
2
2076
1
2074
0
SCLK
1
0
0
2073
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
2072
MSB
CS#
7
6
SCLK
SI
Data Byte 2
7
6
5
4
3
2
MSB
Data Byte 3
1
0 7
6
5
4
3
2
Data Byte 256
1
MSB
0
5
4
3
2
MSB
7.13. Quad Page Program (32H)
The Quad Page Program command is for programming the memory using four pins: IO0, IO1, IO2, and IO3. To use
Quad Page Program the Quad enable in status register Bit9 must be set (QE=1). A Write Enable (WREN) command must
previously have been executed to set the Write Enable Latch (WEL) bit before sending the Page Program command. The
Quad Page Program command is entered by driving CS# Low, followed by the command code (32H), three address bytes
and at least one data byte on IO pins.
The command sequence is shown in Figure17. If more than 256 bytes are sent to the device, previously latched data
are discarded and the last 256 data bytes are guaranteed to be programmed correctly within the same page. If less than
256 data bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on
the other bytes of the same page. CS# must be driven high after the eighth bit of the last data byte has been latched in;
otherwise the Quad Page Program command is not executed.
As soon as CS# is driven high, the self-timed Quad Page Program cycle (whose duration is tPP) is initiated. While the
23
48 - 23
Rev.1.1
Uniform Sector Uniform sector dual and quad serial flash
GD25Q16BxIGx
Dual and Quad Serial Flash
GD25Q16B
Quad Page Program cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP)
bit. The Write In Progress (WIP) bit is 1 during the self-timed Quad Page Program cycle, and is 0 when it is completed. At
some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset.
A Quad Page Program command applied to a page which is protected by the Block Protect (BP4, BP3, BP2, BP1,
BP0) is not executed.
Figure 17.Quad Page Program Sequence Diagram
CS#
0
SCLK
1
2
3
4
5
6
8
7
24-bit address
Command
SI(IO0)
28 29 30 31 32 33 34 35 36 37 38 39
9 10
0 4
0
4
0
4
0
4
0
5
1
5
1
5
1
5
1
WP#(IO2)
6
2
6
2
6
2
6
2
HOLD#(IO3)
7
3
7
3
7
3
7
3
537
538
539
540
541
542
543
32H
Byte1 Byte2
23 22 21
2
3
1
MSB
SO(IO1)
SCLK
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
Byte11Byte12
536
CS#
Byte256
Byte253
SI(IO0)
4
SO(IO1)
5 1
5 1
5 1
5 1
5 1
5 1
5 1
5 1
5 1
5 1
5 1
5 1
WP#(IO2)
6 2
6 2
6 2
6 2
6 2
6 2
6 2
6 2
6 2
6 2
6 2
6 2
HOLD#(IO3)
7 3
7 3
7 3
7 3
7 3
7 3
7 3
7 3
7 3
7 3
7 3
7 3
0
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
0
7.14. Sector Erase (SE) (20H)
The Sector Erase (SE) command is for erasing the all data of the chosen sector. A Write Enable (WREN) command
must previously have been executed to set the Write Enable Latch (WEL) bit. The Sector Erase (SE) command is entered
by driving CS# low, followed by the command code, and 3-address byte on SI. Any address inside the sector is a valid
address for the Sector Erase (SE) command. CS# must be driven low for the entire duration of the sequence.
The Sector Erase command sequence: CS# goes low � sending Sector Erase command � 3-byte address on SI �
CS# goes high. The command sequence is shown in Figure18. CS# must be driven high after the eighth bit of the last
address byte has been latched in; otherwise the Sector Erase (SE) command is not executed. As soon as CS# is driven
high, the self-timed Sector Erase cycle (whose duration is tSE) is initiated. While the Sector Erase cycle is in progress, the
Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1
during the self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch (WEL) bit is reset. A Sector Erase (SE) command applied to a sector which is protected
by the Block Protect (BP4, BP3, BP2, BP1, BP0) bit (see Table1.0&1.1) is not executed.
24
48 - 24
Rev.1.1
Uniform Sector Uniform sector dual and quad serial flash
GD25Q16BxIGx
Dual and Quad Serial Flash
GD25Q16B
Figure 18. Sector Erase Sequence Diagram
CS#
SCLK
0
1
2
3
4
5
6
7
8
Command
SI
9
29 30 31
24 Bits Address
20H
23 22
MSB
2
1
0
7.15. 32KB Block Erase (BE) (52H)
The 32KB Block Erase (BE) command is for erasing the all data of the chosen block. A Write Enable (WREN)
command must previously have been executed to set the Write Enable Latch (WEL) bit. The 32KB Block Erase (BE)
command is entered by driving CS# low, followed by the command code, and three address bytes on SI. Any address
inside the block is a valid address for the 32KB Block Erase (BE) command. CS# must be driven low for the entire duration
of the sequence.
The 32KB Block Erase command sequence: CS# goes low � sending 32KB Block Erase command � 3-byte
address on SI � CS# goes high. The command sequence is shown in Figure19. CS# must be driven high after the eighth
bit of the last address byte has been latched in; otherwise the 32KB Block Erase (BE) command is not executed. As soon
as CS# is driven high, the self-timed Block Erase cycle (whose duration is tBE) is initiated. While the Block Erase cycle is in
progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress
(WIP) bit is 1 during the self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the
cycle is completed, the Write Enable Latch (WEL) bit is reset. A 32KB Block Erase (BE) command applied to a block which
is protected by the Block Protect (BP4, BP3, BP2, BP1, BP0) bits (see Table1.0&1.1) is not executed.
Figure 19. 32KB Block Erase Sequence Diagram
CS#
SCLK
SI
0
1
2
3
4
5
6
7
9
29 30 31
24 Bits Address
Command
52H
8
23 22
MSB
2
1
0
7.16. 64KB Block Erase (BE) (D8H)
The 64KB Block Erase (BE) command is for erasing the all data of the chosen block. A Write Enable (WREN)
command must previously have been executed to set the Write Enable Latch (WEL) bit. The 64KB Block Erase (BE)
command is entered by driving CS# low, followed by the command code, and three address bytes on SI. Any address
inside the block is a valid address for the 64KB Block Erase (BE) command. CS# must be driven low for the entire duration
of the sequence.
The 64KB Block Erase command sequence: CS# goes low � sending 64KB Block Erase command � 3-byte
address on SI � CS# goes high. The command sequence is shown in Figure20. CS# must be driven high after the eighth
bit of the last address byte has been latched in; otherwise the 64KB Block Erase (BE) command is not executed. As soon
as CS# is driven high, the self-timed Block Erase cycle (whose duration is tBE) is initiated. While the Block Erase cycle is in
progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress
(WIP) bit is 1 during the self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the
cycle is completed, the Write Enable Latch (WEL) bit is reset. A 64KB Block Erase (BE) command applied to a block which
is protected by the Block Protect (BP4, BP3, BP2, BP1, BP0) bits (see Table1.0&1.1) is not executed.
25
48 - 25
Rev.1.1
GD25Q16BxIGx
Uniform Sector Uniform sector dual and quad serial flash
Dual and Quad Serial Flash
GD25Q16B
Figure 20. 64KB Block Erase Sequence Diagram
CS#
SCLK
0
1
2
3
4
5
6
7
8
9
Command
SI
29 30 31
24 Bits Address
D8H
2
23 22
MSB
1
0
7.17. Chip Erase (CE) (60/C7H)
The Chip Erase (CE) command is for erasing the all data of the chip. A Write Enable (WREN) command must
previously have been executed to set the Write Enable Latch (WEL) bit .The Chip Erase (CE) command is entered by
driving CS# Low, followed by the command code on Serial Data Input (SI). CS# must be driven Low for the entire duration
of the sequence.
The Chip Erase command sequence: CS# goes low � sending Chip Erase command � CS# goes high. The
command sequence is shown in Figure21. CS# must be driven high after the eighth bit of the command code has been
latched in, otherwise the Chip Erase command is not executed. As soon as CS# is driven high, the self-timed Chip Erase
cycle (whose duration is tCE) is initiated. While the Chip Erase cycle is in progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Chip Erase
cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL)
bit is reset. The Chip Erase (CE) command is executed only if the Block Protect (BP2, BP1, BP0) bits are “000” when
CMP=0, or “110/111” when CMP=1. The Chip Erase (CE) command is ignored if one or more sectors are protected.
Figure 21. Chip Erase Sequence Diagram
CS#
SCLK
0
1
SI
2
3
4
5
6
7
Command
60H or C7H
7.18. Deep Power-Down (DP) (B9H)
Executing the Deep Power-Down (DP) command is the only way to put the device in the lowest consumption mode
(the Deep Power-Down Mode). It can also be used as an extra software protection mechanism, while the device is not in
active use, since in this mode, the device ignores all Write, Program and Erase commands. Driving CS# high deselects the
device, and puts the device in the Standby Mode (if there is no internal cycle currently in progress). But this mode is not the
Deep Power-Down Mode. The Deep Power-Down Mode can only be entered by executing the Deep Power-Down (DP)
command. Once the device has entered the Deep Power-Down Mode, all commands are ignored except the Release from
Deep Power-Down and Read Device ID (RDI) command. This releases the device from this mode. The Release from Deep
Power-Down and Read Device ID (RDI) command also allows the Device ID of the device to be output on SO.
The Deep Power-Down Mode automatically stops at Power-Down, and the device always Power-Up in the Standby
Mode. The Deep Power-Down (DP) command is entered by driving CS# low, followed by the command code on SI. CS#
must be driven low for the entire duration of the sequence.
The Deep Power-Down command sequence: CS# goes low � sending Deep Power-Down command � CS# goes
high. The command sequence is shown in Figure22. CS# must be driven high after the eighth bit of the command code has
been latched in; otherwise the Deep Power-Down (DP) command is not executed. As soon as CS# is driven high, it
requires a delay of tDP before the supply current is reduced to ICC2 and the Deep Power-Down Mode is entered. Any Deep
26
48 - 26
Rev.1.1
GD25Q16BxIGx
Uniform Sector Uniform sector dual and quad serial flash
Dual and Quad Serial Flash
GD25Q16B
Power-Down (DP) command, while an Erase, Program or Write cycle is in progress, is rejected without having any effects
on the cycle that is in progress.
Figure 22. Deep Power-Down Sequence Diagram
CS#
SCLK
0
1
2
3
4
5
6
Command
SI
tDP
7
Stand-by mode Deep Power-down mode
B9H
7.19. Release from Deep Power-Down or High Performance Mode and Read
Device ID (RDI) (ABH)
The Release from Power-Down or High Performance Mode / Device ID command is a multi-purpose command. It can be
used to release the device from the Power-Down state or High Performance Mode or obtain the devices electronic
identification (ID) number.
To release the device from the Power-Down state or High Performance Mode, the command is issued by driving the
CS# pin low, shifting the instruction code “ABH” and driving CS# high as shown in Figure23. Release from Power-Down
will take the time duration of tRES1 (See AC Characteristics) before the device will resume normal operation and other
command are accepted. The CS# pin must remain high during the tRES1 time duration.
When used only to obtain the Device ID while not in the Power-Down state, the command is initiated by driving the
CS# pin low and shifting the instruction code “ABH” followed by 3-dummy byte. The Device ID bits are then shifted out on
the falling edge of SCLK with most significant bit (MSB) first as shown in Figure23. The Device ID value for the
GD25Q16B is listed in Manufacturer and Device Identification table. The Device ID can be read continuously. The
command is completed by driving CS# high.
When used to release the device from the Power-Down state and obtain the Device ID, the command is the same
as previously described, and shown in Figure23, except that after CS# is driven high it must remain high for a time
duration of tRES2 (See AC Characteristics). After this time duration the device will resume normal operation and other
command will be accepted. If the Release from Power-Down / Device ID command is issued while an Erase, Program or
Write cycle is in process (when WIP equal 1) the command is ignored and will not have any effects on the current cycle.
Figure 23. Release Power-Down or High Performance Mode Sequence Diagram
CS#
SCLK
SI
0
1
2
3
4
5
6
7
t RES1
Command
ABH
Deep Power-down mode
27
48 - 27
Stand-by mode
Rev.1.1
GD25Q16BxIGx
Uniform Sector Uniform sector dual and quad serial flash
Dual and Quad Serial Flash
GD25Q16B
Figure 24. Release Power-Down/Read Device ID Sequence Diagram
CS#
0
1
2
3
4
5
6
7
8
9
29 30 31 32 33 34 35 36 37 38
SCLK
Command
SI
SO
t RES2
3 Dummy Bytes
2
23 22
ABH
1
0
MSB
High-Z
MSB
7
Device ID
5 4 3 2
6
1
0
Deep Power-down Mode Stand-by Mode
7.20. Read Manufacture ID/ Device ID (REMS) (90H)
The Read Manufacturer/Device ID command is an alternative to the Release from Power-Down / Device ID
command that provides both the JEDEC assigned Manufacturer ID and the specific Device ID.
The command is initiated by driving the CS# pin low and shifting the command code “90H” followed by a 24-bit
address (A23-A0) of 000000H. After which, the Manufacturer ID and the Device ID are shifted out on the falling edge of
SCLK with most significant bit (MSB) first as shown in Figure25. If the 24-bit address is initially set to 000001H, the Device
ID will be read first.
Figure 25. Read Manufacture ID/ Device ID Sequence Diagram
CS#
0
SCLK
2
3
4
5
6
7
8
9 10
Command
SI
28 29 30 31
24-bit address
90H
3
23 22 21
2
1
0
High-Z
SO
CS#
1
32
33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
SI
SO
7
MSB
Manufacturer ID
6 5 4 3 2 1
Device ID
0
7
6
5
4
3
2
1
0
MSB
7.21. Read Manufacture ID/ Device ID Dual I/O (92H)
The Read Manufacturer/Device ID Dual I/O command is an alternative to the Release from Power-Down / Device ID
command that provides both the JEDEC assigned Manufacturer ID and the specific Device ID by dual I/O.
The command is initiated by driving the CS# pin low and shifting the command code “92H” followed by a 24-bit
address (A23-A0) of 000000H. After which, the Manufacturer ID and the Device ID are shifted out on the falling edge of
SCLK with most significant bit (MSB) first as shown in Figure26. If the 24-bit address is initially set to 000001H, the Device
ID will be read first.
28
48 - 28
Rev.1.1
GD25Q16BxIGx Uniform sector dual and quad serial flash
Uniform Sector
Dual and Quad Serial Flash
GD25Q16B
Figure 26. Read Manufacture ID/ Device ID Dual I/O Sequence Diagram
CS#
0
SCLK
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
6
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
7
5
3
1
7
5
3
1
7
5
3
1
7
5
3
1
Command
SI(IO0)
92H
SO(IO1)
A23-16
A15-8
A7-0
M7-0
CS#
SCLK
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SI(IO0)
6
SO(IO1)
7
4
2
0
6
4
2
0
6
5
3
1
7
5
3
1
7
MFR ID
Device ID
4
2
0
6
4
2
0
6
5
3
1
7
5
3
1
7
MFR ID
(Repeat)
Device ID
(Repeat)
4
2
0
6
4
2
0
5
3
1
7
5
3
1
MFR ID
(Repeat)
Device ID
(Repeat)
7.22. Read Manufacture ID/ Device ID Quad I/O (94H)
The Read Manufacturer/Device ID Quad I/O command is an alternative to the Release from Power-Down / Device ID
command that provides both the JEDEC assigned Manufacturer ID and the specific Device ID by quad I/O.
The command is initiated by driving the CS# pin low and shifting the command code “94H” followed by a 24-bit
address (A23-A0) of 000000H. After which, the Manufacturer ID and the Device ID are shifted out on the falling edge of
SCLK with most significant bit (MSB) first as shown in Figure27. If the 24-bit address is initially set to 000001H, the Device
ID will be read first.
48
29 - 29
Rev.1.1
GD25Q16BxIGx
Uniform Sector Uniform sector dual and quad serial flash
Dual and Quad Serial Flash
GD25Q16B
Figure 27. Read Manufacture ID/ Device ID Quad I/O Sequence Diagram
CS#
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
4
0
4
0
4
0
4
0
4
0
4
0
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
0
SCLK
1
2
3
4
5
6
7
Command
SI(IO0)
94H
A23-16 A15-8 A7-0 M7-0
Dummy
MFR ID DID
CS#
SCLK
24 25 26 27 28 29 30 31
SI(IO0)
4
0
4
0
4
0
4
0
SO(IO1)
5
1
5
1
5
1
5
1
WP#(IO2)
6
2
6
2
6
2
6
2
HOLD#(IO3) 7
3
7
3
7
3
7
3
MFR ID DID MFR ID DID
(Repeat)(Repeat)(Repeat)(Repeat)
7.23. Read Identification (RDID) (9FH)
The Read Identification (RDID) command allows the 8-bit manufacturer identification to be read, followed by two
bytes of device identification. The device identification indicates the memory type in the first byte, and the memory capacity
of the device in the second byte. Any Read Identification (RDID) command while an Erase or Program cycle is in progress,
is not decoded, and has no effect on the cycle that is in progress. The Read Identification (RDID) command should not be
issued while the device is in Deep Power-Down Mode.
The device is first selected by driving CS# to low. Then, the 8-bit command code for the command is shifted in. This is
followed by the 24-bit device identification, stored in the memory, being shifted out on Serial Data Output, each bit being
shifted out during the falling edge of Serial Clock. The command sequence is shown in Figure28. The Read Identification
(RDID) command is terminated by driving CS# to high at any time during data output. When CS# is driven high, the device
is put in the Standby Mode. Once in the Standby Mode, the device waits to be selected, so that it can receive, decode and
execute commands.
30
48 - 30
Rev.1.1
Uniform Sector Uniform sector dual and quad serial flash
GD25Q16BxIGx
Dual and Quad Serial Flash
GD25Q16B
Figure 28. Read Identification ID Sequence Diagram
CS#
0
SCLK
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
7
6
9FH
Command
SI
SO
MSB
CS#
Manufacturer ID
5 4 3 2 1
0
16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31
SCLK
SI
7
SO
6
5 4 3 2 1
Memory Type
JDID15-JDID8
MSB
7
0
MSB
6
5 4 3 2
Capacity
JDID7-JDID0
1
0
7.24. High Performance Mode (HPM) (A3H)
The High Performance Mode (HPM) command must be executed prior to Dual or Quad I/O commands when
operating at high frequencies (see fR and fC1 in AC Electrical Characteristics). This command allows pre-charging of
internal charge pumps so the voltages required for accessing the flash memory array are readily available. The
command sequence: CS# goes low�Sending A3H command� Sending 3-dummy byte�CS# goes high. See
Figure29. After the HPM command is executed, the device will maintain a slightly higher standby current (Icc8) than
standard SPI operation. The Release from Power-Down or HPM command (ABH) can be used to return to standard SPI
standby current (Icc1). In addition, Write Enable command (06H) and Power-Down command (B9H) will also release
the device from HPM mode back to standard SPI standby state.
Figure 29. High Performance Mode Sequence Diagram
CS#
SCLK
0
1
SI
2
3
4
5
Command
A3H
6
7
8
9
29 30 31
t HPM
3 Dummy Bytes
23 22
MSB
2
1
0
SO
High Performance Mode
7.25. Continuous Read Mode Reset (CRMR) (FFH)
The Dual/Quad I/O Fast Read operations, “Continuous Read Mode” bits (M7-0) are implemented to further reduce
command overhead. By setting the (M7-0) to AXH, the next Dual/Quad I/O Fast Read operations do not require the
BBH/EBH/E7H command code.
Because the GD25Q16B has no hardware reset pin, so if Continuous Read Mode bits are set to “AXH”, the
GD25Q16B will not recognize any standard SPI commands. So Continuous Read Mode Reset command will release the
31
48 - 31
Rev.1.1
GD25Q16BxIGx
Uniform Sector Uniform sector dual and quad serial flash
Dual and Quad Serial Flash
GD25Q16B
Continuous Read Mode from the “AXH” state and allow standard SPI command to be recognized. The command sequence
is show in Figure30.
Figure 30. Continuous Read Mode Reset Sequence Diagram
Mode Bit Reset for Quad/Dual I/O
CS#
0
1
2
3
4
5
6
7
SCLK
SI(IO0)
FFH
SO(IO1)
Don`t Care
WP#(IO2)
Don`t Care
HOLD#(IO3)
Don`t Care
7.26. Program/Erase Suspend (PES) (75H)
The Program/Erase Suspend command “75H”, allows the system to interrupt a page program or sector/block erase
operation and then read data from any other sector or block. The Write Status Register command (01H) and Erase
Security Registers (44H, 42H) and Erase commands (20H, 52H, D8H, C7H, 60H) and Page Program command are not
allowed during Program/Erase suspend. Program/Erase Suspend is valid only during the page program or sector/block
erase operation. A maximum of time of “tsus” (See AC Characteristics) is required to suspend the program/erase
operation.
The Program/Erase Suspend command will be accepted by the device only if the SUS bit in the Status Register
equal to 0 and WIP bit equal to 1 while a Page Program or a Sector or Block Erase operation is on-going. If the SUS bit
equal to 1 or WIP bit equal to 0, the Suspend command will be ignored by the device. The WIP bit will be cleared form 1
to 0 within “tsus” and the SUS bit will be set from 0 to 1 immediately after Program/Erase Suspend. A power-off during the
suspend period will reset the device and release the suspend state. The command sequence is show in Figure31.
Figure 31. Program/Erase Suspend Sequence Diagram
CS#
SCLK
SI
SO
0
1
2
3
4
5
6
7
tSUS
Command
75H
High-Z
Accept read command
7.27. Program/Erase Resume (PER) (7AH)
The Program/Erase Resume command must be written to resume the program or sector/block erase operation after
a Program/Erase Suspend command. The Program/Erase command will be accepted by the device only if the SUS bit
32
48 - 32
Rev.1.1
Uniform sector dual and quad serial flash
GD25Q16BxIGx
Uniform Sector
Dual and Quad Serial Flash
GD25Q16B
equal to 1 and the WIP bit equal to 0. After issued the SUS bit in the status register will be cleared from 1 to 0 immediately,
the WIP bit will be set from 0 to 1 within 200ns and the Sector or Block will complete the erase operation or the page will
complete the program operation. The Program/Erase Resume command will be ignored unless a Program/Erase Suspend
is active. The command sequence is show in Figure32.
Figure 32. Program/Erase Resume Sequence Diagram
CS#
0
SCLK
1
2
3
4
5
6
7
Command
SI
7AH
SO
Resume Erase/Program
7.28. Erase Security Registers (44H)
The GD25Q16B provides four 256-byte Security Registers which can be erased and programmed individually.
These registers may be used by the system manufacturers to store security and other important information separately
from the main memory array.
The Erase Security Registers command is similar to Sector/Block Erase command. A Write Enable (WREN)
command must previously have been executed to set the Write Enable Latch (WEL) bit.
The Erase Security Registers command sequence: CS# goes low � sending Erase Security Registers command �
CS# goes high. The command sequence is shown in Figure33. CS# must be driven high after the eighth bit of the
command code has been latched in, otherwise the Erase Security Registers command is not executed. As soon as CS# is
driven high, the self-timed Erase Security Registers cycle (whose duration is tSE) is initiated. While the Erase Security
Registers cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The
Write In Progress (WIP) bit is 1 during the self-timed Erase Security Registers cycle, and is 0 when it is completed. At some
unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. The Security Registers Lock Bit
(LB) in the Status Register can be used to OTP protect the security registers. Once the LB bit is set to 1, the Security
Registers will be permanently locked; the Erase Security Registers command will be ignored.
Address
A23-A16
A15-A10
A9-A0
Security Registers
00000000
000000
Don’t Care
Figure 33. Erase Security Registers command Sequence Diagram
CS#
SCLK
SI
0
1
2
3
4
5
6
7
8
9
24 Bits Address
Command
44H
29 30 31
23 22
MSB
4833- 33
2
1
0
Rev.1.1
GD25Q16BxIGx
Uniform Sector Uniform sector dual and quad serial flash
Dual and Quad Serial Flash
GD25Q16B
7.29. Program Security Registers (42H)
The Program Security Registers command is similar to the Page Program command. It allows from 1 to 256 bytes
Security Registers data to be programmed. A Write Enable (WREN) command must previously have been executed to set
the Write Enable Latch (WEL) bit before sending the Program Security Registers command. The Program Security
Registers command is entered by driving CS# Low, followed by the command code (42H), three address bytes and at least
one data byte on SI. As soon as CS# is driven high, the self-timed Program Security Registers cycle (whose duration is tPP)
is initiated. While the Program Security Registers cycle is in progress, the Status Register may be read to check the value
of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Program Security Registers
cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL)
bit is reset.
If the Security Registers Lock Bit (LB) is set to 1, the Security Registers will be permanently locked. Program
Security Registers command will be ignored.
Address
A23-A16
A15-A8
A7-A0
Security Registers 0
00H
00H
Byte Address
Security Registers 1
00H
01H
Byte Address
Security Registers 2
00H
02H
Byte Address
Security Registers 3
00H
03H
Byte Address
Figure 34. Program Security Registers command Sequence Diagram
CS#
5
6
7
8
9 10
Command
24-bit address
42H
3
23 22 21
2
Data Byte 1
1
0
MSB
6
5
4
3
2
1
2078
SI
28 29 30 31 32 33 34 35 36 37 38 39
2079
4
2076
3
2077
2
2075
1
2074
0
SCLK
7
1
0
0
2073
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
2072
MSB
CS#
7
6
SCLK
SI
Data Byte 3
Data Byte 2
7
MSB
6
5
4
3
2
1
0
7
6
5
4
3
2
MSB
Data Byte 256
1
0
5
4
3
2
MSB
34
48 - 34
Rev.1.1
GD25Q16BxIGx
Uniform Sector Uniform sector dual and quad serial flash
Dual and Quad Serial Flash
GD25Q16B
7.30. Read Security Registers (48H)
The Read Security Registers command is similar to Fast Read command. The command is followed by a 3-byte
address (A23-A0) and a dummy byte, each bit being latched-in during the rising edge of SCLK. Then the memory content,
at that address, is shifted out on SO, each bit being shifted out, at a Max frequency fC, during the falling edge of SCLK. The
first byte addressed can be at any location. The address is automatically incremented to the next higher address after each
byte of data is shifted out. Once the A9-A0 address reaches the last byte of the register (Byte 3FFH), it will reset to 000H,
the command is completed by driving CS# high.
Address
A23-A16
A15-A10
A9-A0
Security Registers
00000000
000000
Address
Figure 35. Read Security Registers command Sequence Diagram
CS#
0
SCLK
1
2
3
4
5
6
7
8
28 29 30 31
24-bit address
Command
SI
9 10
48H
23 22 21
2
3
1
0
High-Z
SO
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
SI
SO
Dummy Byte
7
6
5
4
3
2
1
0
7 6
MSB
35
48 - 35
Data Out1
5 4 3 2
1
0
Data Out2
7 6 5
MSB
Rev.1.1
Uniform Sector Uniform sector dual and quad serial flash
GD25Q16BxIGx
Dual and Quad Serial Flash
GD25Q16B
8. ELECTRICAL CHARACTERISTICS
8.1. POWER-ON TIMING
Vcc(max)
Program, Erase and Write command are ignored
Chip Selection is not allowed
Vcc(min)
VWI
tVSL
Reset
State
Read command
is allowed
Device is fully
accessible
tPUW
Time
Table3. Power-Up Timing and Write Inhibit Threshold
Symbol
Parameter
Min
Max
Unit
tVSL
VCC(min) to CS# Low
10
us
tPUW
Time Delay Before Write Instruction
1
10
ms
VWI
Write Inhibit Voltage
1
2.5
V
8.2. INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The Status Register
contains 00H (all Status Register bits are 0).
8.3. DATA RETENTION AND ENDURANCE
Parameter
Minimum Pattern Data Retention Time
Erase/Program Endurance
Test Condition
Min
Units
150�
10
Years
125�
20
Years
-40 to 85�
100K
Cycles
8.4. LATCH UP CHARACTERISTICS
Parameter
Min
Input Voltage Respect To VSS On I/O Pins
VCC Current
36
48 - 36
Max
-1.0V
VCC+1.0V
-100mA
100mA
Rev.1.1
GD25Q16BxIGx
Uniform Sector Uniform sector dual and quad serial flash
Dual and Quad Serial Flash
GD25Q16B
8.5. ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Unit
Ambient Operating Temperature
-40 to 85
�
Storage Temperature
-65 to 150
�
Output Short Circuit Current
200
mA
Applied Input/Output Voltage
-0.5 to 4.0
V
-0.5 to 4.0
V
VCC
0.8VCC
Input timing reference level
0.7VCC
0.3VCC
0.2VCC
Output timing reference level
AC Measurement Level
0.5VCC
Note: Input pulse rise and fall time are<5ns
8.6. CAPACITANCE MEASUREMENT CONDITIONS
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
CIN
Input Capacitance
6
pF
VIN=0V
COUT
Output Capacitance
8
pF
VOUT=0V
CL
Load Capacitance
30
Input Rise And Fall time
pF
5
ns
Input Pulse Voltage
0.2VCC to 0.8VCC
V
Input Timing Reference Voltage
0.3VCC to 0.7VCC
V
Output Timing Reference Voltage
0.5VCC
V
Figure 36. Input Test Waveform and Measurement Level
Maximum Negative Overshoot Waveform
20ns
Maximum Positive Overshoot Waveform
20ns
20ns
Vss
Vcc + 2.0V
Vss-2.0V
Vcc
20ns
20ns
37
48 - 37
20ns
Rev.1.1
GD25Q16BxIGx
Uniform Sector Uniform sector dual and quad serial flash
Dual and Quad Serial Flash
GD25Q16B
8.7. DC CHARACTERISTIC
(T= -40�~85�, VCC=2.7~3.6V)
Symbol
Parameter
Test Condition
Min.
Typ
Max.
Unit.
ILI
Input Leakage Current
±2
��
ILO
Output Leakage Current
±2
��
ICC1
Standby Current
1
5
��
1
5
��
15
20
mA
13
18
mA
CS#=VCC,
VIN=VCC or VSS
ICC2
Deep Power-Down Current
CS#=VCC,
VIN=VCC or VSS
CLK=0.1VCC / 0.9VCC
at 120MHz,
ICC3
Operating Current (Read)
Q=Open(*1 I/O)
CLK=0.1VCC / 0.9VCC
at 80MHz,
Q=Open(*1,*2,*4 I/O)
ICC4
Operating Current (PP)
CS#=VCC
10
mA
ICC5
Operating Current(WRSR)
CS#=VCC
10
mA
ICC6
Operating Current (SE)
CS#=VCC
10
mA
ICC7
Operating Current (BE)
CS#=VCC
10
mA
I CC8
High Performance Current
800
uA
VIL
Input Low Voltage
-0.5
0.2VCC
V
VIH
Input High Voltage
0.7VCC
VCC+0.4
V
VOL
Output Low Voltage
IOL =1.6mA
0.4
V
VOH
Output High Voltage
IOH =-�����
600
VCC-0.2
38
48 - 38
V
Rev.1.1
GD25Q16BxIGx
Uniform Sector Uniform sector dual and quad serial flash
Dual and Quad Serial Flash
GD25Q16B
8.8. AC CHARACTERISTICS
(T= -40�~85�, VCC=2.7~3.6V, CL=30pf)
Symbol
fC
Parameter
Min.
Serial Clock Frequency For: FAST_READ(0BH),
Dual Output(3BH)
Typ.
Max.
Unit.
120
MHz
120
MHz
DC.
80
MHz
DC.
80
MHz
DC.
Serial Clock Frequency For: Dual I/O(BBH),
fC1
Quad I/O(EBH), Quad Output(6BH) (Dual I/O & Quad I/O
DC.
80
With High Performance Mode)
Serial Clock Frequency For: Dual I/O(BBH),
fC2
Quad I/O(EBH) (Dual I/O & Quad I/O Without High
Performance Mode)
fR
Serial Clock Frequency For: Read(03H)
tCLH
Serial Clock High Time
4
ns
tCLL
Serial Clock Low Time
4
ns
tCLCH
Serial Clock Rise Time (Slew Rate)
0.2
V/ns
tCHCL
Serial Clock Fall Time (Slew Rate)
0.2
V/ns
tSLCH
CS# Active Setup Time
5
ns
tCHSH
CS# Active Hold Time
5
ns
tSHCH
CS# Not Active Setup Time
5
ns
tCHSL
CS# Not Active Hold Time
5
ns
tSHSL
CS# High Time (read/write)
20
ns
tSHQZ
Output Disable Time
tCLQX
Output Hold Time
0
ns
tDVCH
Data In Setup Time
2
ns
tCHDX
Data In Hold Time
2
ns
tHLCH
Hold# Low Setup Time (relative to Clock)
5
ns
tHHCH
Hold# High Setup Time (relative to Clock)
5
ns
tCHHL
Hold# High Hold Time (relative to Clock)
5
ns
tCHHH
Hold# Low Hold Time (relative to Clock)
5
ns
tHLQZ
Hold# Low To High-Z Output
6
ns
tHHQX
Hold# Low To Low-Z Output
6
ns
tCLQV
Clock Low To Output Valid
6
ns
tWHSL
Write Protect Setup Time Before CS# Low
20
ns
tSHWL
Write Protect Hold Time After CS# High
100
ns
tDP
CS# High To Deep Power-Down Mode
tRES1
tRES2
tHPM
6
CS# High To Standby Mode Without Electronic Signature
Read
CS# High To Standby Mode With Electronic Signature
Read
CS# High To High Performance Mode
39
48 - 39
ns
0.1
��
0.1
��
0.1
��
0.2
us
Rev.1.1
GD25Q16BxIGx
Uniform SectorUniform sector dual and quad serial flash
Dual and Quad Serial Flash
tSUS
GD25Q16B
CS# High To Next Command After Suspend
2
us
2
15
ms
tW
Write Status Register Cycle Time
tPP
Page Programming Time
0.7
2.4
ms
tSE
Sector Erase Time
100
300
ms
tBE
Block Erase Time(32K Bytes/64K Bytes)
0.2/0.3
1/1.2
s
tCE
Chip Erase Time(GD25Q16B)
10
25
s
Figure 37. Serial Input Timing
tSHSL
CS#
tCHSL
SCLK
tSLCH
tDVCH
tCHSH
MSB
SO
High-Z
tCHCL
tCLCH
tCHDX
SI
tSHCH
LSB
Figure 38. Output Timing
CS#
tCH
SCLK
tCLQV
tCLQX
tCLQV
tSHQZ
tCL
tQLQH
tCLQX
SO
LSB
tQHQL
SI
Least significant address bit (LIB) in
Figure 39. Hold Timing
CS#
SCLK
SO
tCHHL
tHLCH
tCHHH
tHLQZ
tHHCH
tHHQX
HOLD#
SI do not care during HOLD operation.
48 40
- 40
Rev.1.1
Uniform Sector Uniform sector dual and quad serial flash
GD25Q16BxIGx
Dual and Quad Serial Flash
GD25Q16B
9. ORDERING INFORMATION
GD XX X XX X X X X X
Packing Type
T or no mark: Tube
Y:Tray
R:Tape & Reel
Green Code
G:Pb Free & Halogen Free Green Package
Temperature Range
I:Industrial(-40� to +85�)
��
Package Type
T: SOP8 150mil
S: SOP8 208mil
V: TSOP8 208mil
F: SOP16 300mil
W: WSON8 (6*5mm)
P: DIP8 300mil
Z: TFBGA24
Generation
B: B Version
Density
16:16Mb
Series
Q:3V, 4KB Uniform Sector, Quad I/O
Product Family
25:Serial Flash
NOTE:
1.
Standard bulk shipment is in Tube. Any alternation of packing method (for Tape, Reel and Tray etc.), please
advise in advance.
41
48 - 41
Rev.1.1
Uniform Sector Uniform sector dual and quad serial flash
GD25Q16BxIGx
Dual and Quad Serial Flash
GD25Q16B
10. PACKAGE INFORMATION
10.1. Package SOP8 150MIL
8
�
5
E1
E
L1
L
1
4
C
D
A2
S
Seating plane
A1
b
e
A
0.10
Dimensions
Symbol
A
Unit
mm
Inch
A1
A2
b
C
D
E
E1
e
L
L1
S
�
�
�
Min
1.35
0.05
1.35
0.31
0.15
4.77
5.80
-
-
0.40
0.85
0.71
0°
6°
11°
Nom
-
-
-
-
-
4.90
6.00
3.90
1.27
-
1.06
0.76
-
7°
12°
Max
1.75
0.25
1.55
0.51
0.25
5.03
6.20
-
-
0.90
1.27
0.81
8°
8°
13°
Min
0.053
0.002
0.053
0.012
0.006
0.188
0.228
-
-
0.016
0.033
0.028
0°
6°
11°
Nom
-
-
-
0.016
-
0.193
0.236
0.154
0.050
-
0.042
0.030
-
7°
12°
Max
0.069
0.010
0.061
0.020
0.010
0.198
0.244
-
-
0.035
0.050
0.032
8°
8°
13°
Note:Both package length and width do not include mold flash.
42
48 - 42
Rev.1.1
GD25Q16BxIGx
Uniform Sector Uniform sector dual and quad serial flash
Dual and Quad Serial Flash
GD25Q16B
10.2. Package SOP8 208MIL
8
�
5
E1
E
L
1
L1
4
C
D
A2
S
A1
b
e
A
Dimensions
Symbol
A1
A2
b
C
D
E
E1
Min
0.05
1.70
0.31
0.18
5.13
7.70
5.18
Nom
0.15
1.80
0.41
0.21
5.23
7.90
5.28
0.25
1.91
0.51
0.25
5.33
8.10
Min
0.002
0.067
0.012
0.007
0.202
Nom
0.006
0.071
0.016
0.008
0.010
0.075
0.020
0.010
Unit
mm
Max
Inch
Max
A
2.16
0.085
e
L
L1
S
�
0.50
1.21
0.62
0
0.67
1.31
0.74
5
5.38
0.85
1.41
0.88
8
0.303
0.204
0.020
0.048
0.024
0
0.206
0.311
0.208
0.026
0.052
0.029
5
0.210
0.319
0.212
0.033
0.056
0.035
8
1.27
0.050
Note:Both package length and width do not include mold flash.
43
48 - 43
Rev.1.1
GD25Q16BxIGx
Uniform Sector Uniform sector dual and quad serial flash
Dual and Quad Serial Flash
GD25Q16B
10.3. Package TSOP8 208MIL
Dimensions
Symbol
A
A1
A2
b
D
E
E1
e
L
Min
-
0.05
0.75
0.35
5.18
7.70
5.18
-
0.50
Nom
-
0.10
0.80
0.42
5.28
7.90
5.28
1.27BSC
0.65
Max
1.00
0.15
0.85
0.48
5.38
8.10
5.38
-
Min
-
0.002
0.030
0.014
0.204
0.303
0.204
Nom
-
0.004
0.031
0.017
0.206
0.311
Max
0.04
0.006
0.033
0.019
0.210
0.319
Unit
mm
Inch
L1
C
�
0.09
0°
-
-
0.80
0.2
10°
-
0.020
0.004
0°
0.206
0.050BSC
0.026
0
-
0.210
-
0.031
0.008
10°
1.31REF
0.052REF
Note:Both package length and width do not include mold flash.
44
48 - 44
Rev.1.1
GD25Q16BxIGx
Uniform Sector Uniform sector dual and quad serial flash
Dual and Quad Serial Flash
GD25Q16B
10.4. Package DIP8 300MIL
4
1
E1
R0.005xDP0.020
5
8
E
D
11°
A2
L
11°
A1
b
S
b1
5°
C
e
eB
Dimensions
Symbol
A1
A2
Min
0.38
3.00
mm
Nom
0.72
Max
Inch
b
E
E1
eB
L
S
7.62
3.04
0.50
8.49
3.30
0.76
6.64
9.35
3.56
1.02
0.300
0.242
0.333
0.12
0.02
0.367
0.215
0.252
0.345
0.13
0.03
0.378
0.366
0.262
0.357
0.14
0.04
b1
C
D
1.27
0.38
0.20
9.05
7.62
6.12
3.25
1.46
0.46
0.28
9.32
7.94
6.38
1.05
3.50
1.65
0.54
0.34
9.59
8.26
Min
0.015
0.118
0.05
0.015
0.008
0.356
Nom
0.028
0.128
0.058
0.018
0.011
Max
0.041
0.138
0.065
0.021
0.014
Unit
e
2.54
0.1
Note:Both package length and width do not include mold flash.
45
48 - 45
Rev.1.1
GD25Q16BxIGx
Uniform Sector Uniform sector dual and quad serial flash
Dual and Quad Serial Flash
GD25Q16B
10.5. Package SOP16 300MIL
�
9
15
E1
E
L
1
L1
8
C
D
A
A2
S
A1
b
e
Dimensions
Symbol
A
A1
A2
b
C
D
E
E1
Min
2.36
0.10
2.24
0.36
0.20
10.10
10.10
7.42
Nom
2.55
0.20
2.34
0.41
0.25
10.30
10.35
7.52
Max
2.75
0.30
2.44
0.51
0.30
10.50
10.60
Min
0.093
0.004
0.088
0.014
0.008
0.397
Nom
0.100
0.008
0.092
0.016
0.010
Max
0.108
0.012
0.096
0.020
0.012
Unit
mm
Inch
e
L
L1
S
0.40
1.31
0.51
0
0.84
1.44
0.64
5
7.60
1.27
1.57
0.77
8
0.397
0.292
0.016
0.052
0.020
0
0.405
0.407
0.296
0.033
0.057
0.025
5
0.413
0.417
0.299
0.050
0.062
0.030
8
1.27
0.050
�
Note:Both package length and width do not include mold flash.
46
48 - 46
Rev.1.1
GD25Q16BxIGx
Uniform Sector Uniform sector dual and quad serial flash
Dual and Quad Serial Flash
GD25Q16B
10.6. Package WSON8 (6*5mm)
D
A2
y
E
A1
A
Top View
L
Side View
D1
b
1
E1
e
Bottom View
Dimensions
Symbol
Unit
mm
Inch
A
A1
A2
b
D
D1
E
E1
e
y
L
0.00
0.50
0.04
0.60
Min
0.70
0.19
0.35
5.90
3.25
4.90
3.85
Nom
0.75
0.22
0.42
6.00
3.37
5.00
3.97
Max
0.80
0.25
0.48
6.10
3.50
5.10
4.10
0.08
0.75
Min
0.028
0.007
0.014
0.232
0.128
0.193
0.151
0.000
0.020
Nom
0.030
0.009
0.016
0.236
0.133
0.197
0.156
0.001
0.024
Max
0.032
0.010
0.019
0.240
0.138
0.201
0.161
0.003
0.030
0.05
0.002
1.27
0.05
Note:Both package length and width do not include mold flash.
47
48 - 47
Rev.1.1
GD25Q16BxIGx
Uniform Sector Uniform sector dual and quad serial flash
Dual and Quad Serial Flash
GD25Q16B
10.7. Package TFBGA-24BALL
1
2
3
4
4
3
2
1
A
A
e
B
B
C
C
E1
E
D
D
E
E
F
F
D
D1
�b
0.10
C
A1
0.10
e
C
C
A2
A
SEATING PLANE
Dimensions
Symbol
A
mm
D
0.35
5.90
0.40
6.00
0.35
0.45
6.10
8.10
Min
0.010
0.014
0.232
0.311
Nom
0.012
0.016
0.236
0.018
0.240
Min
0.25
Nom
0.30
Max
Inch
A1
Max
1.20
0.047
0.014
A2
0.85
0.033
D1
E
b
Unit
E1
e
5.00
1.00
0.200
0.039
7.90
3.00
0.120
8.00
0.315
0.319
Note:Both package length and width do not include mold flash.
48
48 - 48
Rev.1.1