Single N-channel MOSFET ELM3C0660A ■General description ■Features ELM3C0660A uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • Vds=600V • Id=6A • Rds(on) < 1.25Ω (Vgs=10V) ■Maximum absolute ratings Parameter Symbol Drain-source voltage Gate-source voltage Continuous drain current Vds Vgs Ta=25°C Ta=100°C Pulsed drain current Avalanche energy L=10mH Idm 6.0 4.3 20 Eas 45 V V 24 Pd Tc=100°C Junction and storage temperature range 600 ±30 Id Tc=25°C Power dissipation Ta=25°C. Unless otherwise noted. Limit Unit Note 4 A 3, 4 mJ 5 W 10 Tj, Tstg A -55 to 150 °C ■Thermal characteristics Parameter Symbol Maximum junction-to-case Maximum junction-to-ambient Rθjc Rθja ■Pin configuration Typ. Max. Unit 5.2 62.5 °C/W °C/W ■Circuit D TO-220F(TOP VIEW) 1 2 3 Note Pin No. 1 Pin name GATE 2 3 DRAIN SOURCE 6-1 G S Single N-channel MOSFET ELM3C0660A ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss 600 V Vds=600V, Vgs=0V, Ta=25°C 25 Vds=600V, Vgs=0V, Ta=100°C 250 Vds=0V, Vgs=±30V ±250 nA 4.5 V A 1 Ω 1 S 1 V A 1 3 Gate threshold voltage On-state drain current Vgs(th) Vds=Vgs, Id=250μA Id(on) Vds=10V, Vgs=10V Static drain-source on-resistance Rds(on) Vgs=10V, Id=3A Forward transconductance Gfs Vds=10V, Id=3A Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is If=10A, Vgs=0V Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Ciss Coss Crss Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note 2.5 20 0.98 1.25 8 1.5 6 μA 1274 126 23 pF pF pF 28.9 nC 2 Qgs Vgs=10V, Vds=300V, Id=6A Qgd td(on) 5.8 10.0 47 nC nC ns 2 2 2 tr Vds=300V, Id=6A, Rgen=25Ω td(off) 32 140 ns ns 2 2 55 ns 2 560 ns 6 μC Vgs=0V, Vds=25V, f=1MHz Qg Turn-off fall time tf Body diode reverse recovery time trr Body diode reverse recovery charge Qrr If=6A, dIf/dt=100A/μs NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Limited only by maximum temperature allowed. 5. Vdd=50V, starting Tj=25°C. 6-2 Single N-channel MOSFET ELM3C0660A ■Typical electrical and thermal characteristics 6-3 Single N-channel MOSFET ELM3C0660A � � � 6-4 Single N-channel MOSFET ELM3C0660A 6-5 Single N-channel MOSFET ELM3C0660A 6-6