Dual N-channel MOSFET ELM34802AA-N ■General description ■Features ELM34802AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=4.5A Rds(on) < 68mΩ (Vgs=10V) Rds(on) < 98mΩ (Vgs=5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note 30 V ±20 V Symbol Vds Vgs Ta=25°C Ta=70°C Continuous drain current 4.5 3.6 20 Id Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg A A 2.0 3 W 1.3 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Steady-state Typ. Rθja ■Pin configuration Max. Unit 62.5 °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. Pin name 1 2 3 SOURCE1 GATE1 SOURCE2 4 5 6 GATE2 DRAIN2 DRAIN2 7 8 DRAIN1 DRAIN1 4-1 D2 D1 G2 G1 S1 S2 Dual N-channel MOSFET ELM34802AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note 30 V Vds=24V, Vgs=0V 1 Vds=20V, Vgs=0V, Ta=55°C 10 Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Static drain-source on-resistance Rds(on) 1.0 20 μA ±100 nA 3.0 V A 1 mΩ 1 1.2 S V 1 1 200 40 20 240 55 30 pF pF pF 6.5 8.5 nC 2 1.5 Vgs=10V, Id=4.5A 55 68 Vgs=5V, Id=3.5A 75 98 Vds=5V, Id=4.5A If=1A, Vgs=0V 4.5 Forward transconductance Diode forward voltage DYNAMIC PARAMETERS Gfs Vsd Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Ciss Coss Crss Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Qgs Vgs=10V, Vds=15V, Id=4.5A Qgd td(on) 1.2 1.6 7 1.8 2.4 11 nC nC ns 2 2 2 tr Vgs=10V, Vds=15V, Id=1A td(off) RL=15Ω, Rgen=6Ω 12 12 18 18 ns ns 2 2 7 11 ns 2 40 80 ns Turn-off delay time Vgs=0V, Vds=15V, f=1MHz Qg Turn-off fall time tf Body diode reverse recovery time trr If=1A, dIf/dt=100A/μs NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 Dual N-channel MOSFET NIKO-SEM P6803HVG Dual N-Channel Enhancement Mode ELM34802AA-N Field Effect Transistor ■Typical electrical and thermal characteristics 6.0V 4.5V 8 4.0V 6 4 3.5V 2 1.8 0 1 VGS= 4.0V 1.6 4.5V 1.4 5.0V 1.2 6.0V 7.0V 1 3.0V 0 On-Resistance Variation with Drain Current and Gate Voltage. 2 DS(ON) ID, Drain-source current(A) VGS= 10V R , Noemalized Drain-source on-resistance On-Region Characteristics. 10 10V 0.8 2 3 0 4 2 ID= 4.5A VGS= 10V 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 0.175 0.125 TA= 125° C TA= 25° C 0.075 0.025 150 Is, Reverse Drain Current (A) ID, Drain Current(A) 25°C 4 2 0 1 2 3 4 6 8 10 Body Diode Forword Voltage Variation with Source Current and Temperature. 125°C 6 4 2 VGS, Gate to Source Voltage(V) 10 TA= -55°C 10 ID=3A 0.225 Transfer Characteristics. 8 8 0.275 TJ, Junction Temperature(°C) VDS= 5V 6 On-Resistance Variation with Gate-to-Source Voltage. RDS(ON), On-resistance(OHM) DS(ON) R , Normalized Drain-source on-resistance On-Resistance Variation with Temperature. 1.4 4 ID, Drain Current(A) VDS, Drain-Source Voltage(V) 1.6 SOP-8 Lead-Free 5 VGS, Gate to Source Voltage(V) 6 VGS= 0V 1 TA= 125°C 25°C 0.1 -55°C 0.01 0.001 0.0001 0 3 4-3 10 0.2 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forword Voltage(V) May-10-2006 1.4 Dual N-channel MOSFET NIKO-SEM 10 ID = 4.5A 400 15V VDS= 5V Capacitance(pF) 8 VGS (Voltage) 10V 6 4 2 300 Ciss 200 Coss 100 Crss 0 0 1 2 3 4 5 5 0 7 6 15 20 25 30 Single Pulse Maximum Power Dissipation. Maximum Safe Operating Area. 5 30 100 3 us 4 MIT )LI (ON S RD 1m s Power(W) 10 ID, Drain Current(A) 10 VDS,Drain to Source Voltage(V) Qg (nC) 10m s 1 100 0.3 1s DC VGS= 10V SINGLE PULSE R¿ JA=125°C/W TA=25°C 0.1 0.03 0.01 SOP-8 Lead-Free Capacitance Characteristics Gate-Charge Characteristics 0 P6803HVG Dual N-Channel Enhancement Mode ELM34802AA-N Field Effect Transistor 0.1 0.3 1 ms 3 2 VGS= 10V SINGLE PULSE R¿ JA=125°C/W TA=25°C 1 3 10 30 50 0 0.01 0.1 1 10 100 300 Single pulse time(SEC) VDS, Drain-Source Voltage(V) D=0.5 0.5 P(pk) r(t), Normalized Effective Transient Thermal Resistance Transient Thermal Response Curve. 1 0.2 0.2 0.1 0.05 0.05 0.02 R¿ JA(t) = r(t) * R¿ �� R¿ JA=125°C/W TJ-TA=P*R¿ JA(t) Duty Cycle, D= t1/ t2 0.02 0.01 Single Pulse 0.01 0.0001 t1 t2 0.1 0.001 0.01 0.1 1 10 100 300 t1 Time(Sec) 4-4 4 May-10-2006