< HVIGBT MODULE > CMH1200DC-34S HIGH POWER SWITCHING USE INSULATED TYPE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module CMH1200DC-34S I C ································································ 1200A V CES ·························································· 1700V 2-element in a Pack Insulated Type CSTBT™ SiC Schottky-Barrier Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Mar. 2013 (HVM-1066-C) Dimensions in mm 1 < HVIGBT MODULE > CMH1200DC-34S HIGH POWER SWITCHING USE INSULATED TYPE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module MAXIMUM RATINGS Symbol V CES V GES IC I CRM IE I ERM I2t P tot V iso T jop T stg t psc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current (Note 2) Surge current load integral Maximum power dissipation (Note 3) Isolation voltage Operating junction temperature Storage temperature Short circuit pulse width Conditions V GE = 0V V CE = 0V, T j = 25°C DC, T c = 110°C Pulse DC Pulse T j = 125°C, V R = 0V, t p = 10ms T c = 25°C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1min. Ratings 1700 ±20 1200 2400 1200 2400 — 6750 4000 −50 ~ +150 −50 ~ +150 10 (Note 1) (Note 1) V CC = 1200 V, V CE ≤ V CES , V GE = 15V, T j = 150°C Unit V V A A A A kA2s W V °C °C µs ELECTRICAL CHARACTERISTICS Symbol Item Conditions T j = 25°C T j = 125°C T j = 150°C I CES Collector cutoff current V CE = V CES , V GE = 0V V GE(th) I GES C ies C oes C res QG Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge V CE = 10V, I C = 120mA, T j = 25°C V GE = V GES , V CE = 0V, T j = 25°C V CEsat Collector-emitter saturation voltage t d(on) Turn-on delay time tr Turn-on rise time E on Turn-on switching energy t d(off) Turn-off delay time tf Turn-off fall time E off Turn-off switching energy (Note 5) V EC Emitter-collector voltage (Note 2) QC Total capacitive charge Mar. 2013 (HVM-1066-C) V CE = 10V, V GE = 0V, f = 100kHz T j = 25°C V CC = 850V, I C = 1200A, V GE = 15V (Note 5) (Note 2,6) I C = 1200 A V GE = 15 V (Note 4) V CC = 850 V I C = 1200 A V GE = ±15 V R G(on) = 1.3 Ω L s = 100 nH Inductive load V CC = 850 V I C = 1200 A V GE = ±15 V R G(off) = 3.3 Ω L s = 100 nH Inductive load I E = 1200A V GE = 0V (Note 4) V CC = 850V, I E = 1200 A R G(on) = 1.3Ω, L s = 100 nH 2 Tj Tj Tj Tj Tj Tj Tj Tj Tj Tj Tj Tj Tj Tj Tj Tj Tj Tj Tj Tj Tj Tj Tj Tj Tj Tj Tj = 25°C = 125°C = 150°C = 25°C = 125°C = 150°C = 25°C = 125°C = 150°C = 25°C = 125°C = 150°C = 25°C = 125°C = 150°C = 25°C = 125°C = 150°C = 25°C = 125°C = 150°C = 25°C = 125°C = 150°C = 25°C = 125°C = 150°C Min — — — — −0.5 — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — Limits Typ 36 150 180 6.0 — 216 8.0 1.6 12.0 1.95 2.25 2.30 0.50 0.50 0.50 0.14 0.15 0.15 110 135 140 1.25 1.35 1.35 0.30 0.55 0.60 250 370 390 1.60 2.20 2.30 5.0 8.5 9.0 Max — — — — 0.5 — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — Unit mA V µA nF nF nF µC V µs µs mJ µs µs mJ V µC < HVIGBT MODULE > CMH1200DC-34S HIGH POWER SWITCHING USE INSULATED TYPE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module THERMAL CHARACTERISTICS Symbol Item R th(j-c)Q R th(j-c)D Thermal resistance R th(c-s) Contact thermal resistance Conditions Junction to Case, IGBT part, 1/2 module Junction to Case, FWDi part, 1/2 module Case to heat sink, 1/2 module λ grease = 1W/m·k, D (c-s) = 100µm Min — — Limits Typ — — Max 18.5 36.0 K/kW K/kW — 16.0 — K/kW Min 7.0 3.0 1.0 — 600 9.5 15.0 — — Limits Typ — — — 0.8 — — — 30.0 0.28 Max 20.0 6.0 3.0 — — — — — — Unit MECHANICAL CHARACTERISTICS Symbol Mt Ms Mt m CTI da ds L P CE R CC’+EE’ Note1. 2. 3. 4. 5. 6. Item Mounting torque Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance Conditions Main terminals screw Mounting screw Auxiliary terminals screw 1/2 module T c = 25°C, 1/2 module Pulse width and repetition rate should be such that junction temperature (T j ) does not exceed T jopmax rating. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (T j ) should not exceed T jmax rating. Pulse width and repetition rate should be such as to cause negligible temperature rise. Definition of all items is according to IEC 60747, unless otherwise specified. Capacitive charge during anti-paralleled FWDi’s turn-off operation. © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Mar. 2013 (HVM-1066-C) 3 Unit N·m N·m N·m kg — mm mm nH mΩ < HVIGBT MODULE > CMH1200DC-34S HIGH POWER SWITCHING USE INSULATED TYPE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 2500 2500 Tj = 125°C VCE = 10V VGE = 17V 2000 VGE = 11V VGE = 15V 1500 Collector Current [A] 2000 Collector Current [A] TRANSFER CHARACTERISTICS (TYPICAL) VGE = 13V VGE = 9V 1000 500 1500 Tj = 125°C / 150°C 1000 Tj = 25°C 500 0 0 0 1 2 3 4 5 6 0 Collector - Emitter Voltage [V] 5 10 15 Gate - Emitter Voltage [V] FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 2500 2500 VGE = 15V Tj = 125°C 2000 Tj = 25°C Emitter Current [A] Collector Current [A] 2000 Tj = 150°C 1500 1000 500 Tj = 150°C Tj = 25°C 1500 Tj = 125°C 1000 500 0 0 1 2 3 0 4 0 2 3 Emitter-Collector Voltage [V] Collector-Emitter Saturation Voltage [V] Mar. 2013 (HVM-1066-C) 1 4 4 < HVIGBT MODULE > CMH1200DC-34S HIGH POWER SWITCHING USE INSULATED TYPE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 1000 Cies 15 Gate-Emitter Voltage [V] 100 Capacitance [nF] VCE = 850V, IC = 1200A Tj = 25°C 10 Coes 1 Cres 10 5 0 -5 -10 VGE = 0V, Tj = 25°C f = 100kHz 0.1 -15 0.1 1 10 100 0 5 15 Gate Charge [µC] Collector-Emitter Voltage [V] HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 2.0 1.2 VCC = 850V, VGE = ±15V RG(on) = 1.3Ω, RG(off) = 3.3Ω Tj = 150°C, Inductive load 1.0 VCC = 850V, IC = 1200A VGE = ±15V, Tj = 150°C Inductive load Eoff Switching Energies [J] Switching Energies [J] 10 0.8 0.6 0.4 Eon 1.5 Eon 1.0 Eoff 0.5 0.2 0.0 0.0 0 500 1000 1500 2000 2500 0 Collector Current [A] Mar. 2013 (HVM-1066-C) 5 10 15 Gate Resistance [Ω] 5 20 < HVIGBT MODULE > CMH1200DC-34S HIGH POWER SWITCHING USE INSULATED TYPE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module PERFORMANCE CURVES HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) REVERSE BIAS SAFE OPERATING AREA (RBSOA) 10 3000 VCC ≤ 1200V, VGE = ±15V Tj = 150°C, RG(off) ≥ 3.3Ω VCC = 850V, VGE = ±15V RG(on) = 1.3Ω, RG(off) = 3.3Ω Tj = 150°C, Inductive load 2500 1 2000 Collector Current [A] Switching Times [µs] td(off) tf td(on) 1500 0.1 1000 tr 500 0.01 100 1000 10000 0 0 Collector Current [A] 500 1000 Voltage 1500 Collector-Emitter [V] 2000 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Normalized Transient Thermal impedance 1.2 Rth(j-c)Q = 18.5K/kW Rth(j-c)D = 36.0K/kW 1 Z 0.8 (t ) = th( j − c ) 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 Time [s] Mar. 2013 (HVM-1066-C) 6 n i ∑ R 1−exp i =1 t − i τ 1 2 3 4 R i [K/kW] 0.0096 0.1893 0.4044 0.3967 t i [sec] 0.0001 0.0058 0.0602 0.3512 < HVIGBT MODULE > CMH1200DC-34S HIGH POWER SWITCHING USE INSULATED TYPE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module Keep safety first in your circuit designs! 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