QRD1210005 Split Dual SiC Super Fast Diode Module

QRD1210005 Preliminary
Split Dual SiC Super
Fast Diode Module
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
100 Amperes/1200 Volts
Y
A
AA
D
AC
AB
F
Z
DETAIL "B"
Q
Q
Q
P
1 2
3
U
4
D1
5
6
7
S1
8
9
Description:
Powerex Super Fast Recovery
Dual Diode Modules are designed
for use in applications requiring
fast switching. The modules are
isolated for easy mounting with
other components on common
heatsinks.
10 11 12
D2
S2
X
B
M
N
E
G
DETAIL "B"
NC
NC
20 19 18 17
L
16 15 14 13
T
S
R
W
DETAIL "A"
V
H
K
C
T
DETAIL "A"
Switch 1
D1 (Pins 1 - 3)
D2 (Pins 7 - 9)
A
A
C
Switch 2
S1 (Pins 4 - 6)
C
S2 (Pins 10 - 12)
Outline Drawing and Circuit Diagram
DimensionsInches Millimeters
A
4.32
109.8
B
2.21
56.1
C
0.71
18.0
D
3.70±0.02 94.0±0.5
E
2.026
51.46
F
3.17
80.5
G
1.96
49.8
H
1.00
25.5
K
0.87
22.0
L
0.266
6.75
M
0.26
6.5
N
0.59
15.0
DimensionsInches Millimeters
Q
0.449
11.40
R
0.885
22.49
S
1.047
26.6
T
0.15
3.80
U
0.16
4.0
V
0.30
7.5
W
0.045
1.15
X
0.03
0.8
Y
0.16
4.0
Z
0.47
12.1
AA
0.17 Dia.
4.3 Dia.
AB
0.10 Dia.
2.5 Dia.
P
11/14 Rev. 1
0.586
14.89
AC
0.08 Dia.
Features:
 Super Fast Switching Time
 RoHS Compliant
 Isolated Mounting
 AlSiC Baseplate
 Low Thermal Impedance
 2500V Isolating Voltage
 Zero Reverse Recovery
Applications:
 Free Wheeling
 Welding and Plasma
Cutting Machine
2.1 Dia.
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
1
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QRD1210005
Split Dual SiC Super Fast Diode Module
100 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
SymbolQRD1210005Units
Repetitive Peak Reverse Blocking Voltage
VRRM 1200Volts
Non-Repetitive Peak Reverse Blocking Voltage
VRSMVRRM + 100
DC Current, TC = 80°C (Resistive load)
IF(DC)
100Amperes
IFSM
I2t
TBDAmperes
TBDA2sec
Peak Half Cycle Non-repetitive Surge Current (t = 8.3mS, 100% VRRM Reapplied)
I2t for Fusing for One Cycle (t = 8.3mS, 100% VRRM Reapplied)
Operating Junction Temperature
Storage Temperature
Volts
Tj
-40 to 175
°C
Tstg
-40 to 150
°C
Maximum Mounting Torque, M6 Mounting Screw
—
40in-lb
Module Weight (Typical)
—
140Grams
V Isolation (60 Hz, Circuit to Base, All Terminals Shorted, t = 1 sec)
VRMS2500Volts
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Reverse Leakage Current
IRRM
Tj = 25 °C, Rated VRRM
—
—
1.0
mA
Tj = 175 °C, Rated VRRM
—
—
2.0
mA
On-State Voltage
VFM
Tj = 25 °C, IF = 100A
—
1.5
1.8
Volts
Tj = 175 °C, IF = 100A
—
2.2
3.0
Volts
Min.
Typ.
Max.
Units
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Thermal Resistance, Junction to Case*
Contact Thermal Resistance, Case to Sink
Test Conditions
Rth(j-c) Q
Per Diode
—
—
0.26
°C/W
Rth(c-s)
Per Module
—
—
0.04
°C/W
(Lubricated)*
*TC, Tf measured point is just under the chip.
2
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
11/14 Rev. 1
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Tj = 25°C
Tj = 125°C
100
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
10-2
10-1
100
10-1
10-1
200
10-2
20
0
1
2
3
4
5
10-3
ON-STATE VOLTAGE, VFM, (VOLTS)
10-4
TBD
10-3
10-3
ON-STATE CURRENT, IFM, (AMPERES)
MAXIMUM ON-STATE
POWER DISSIPATION
(RECTANGULAR WAVEFORM)
MAXIMUM ALLOWABLE
CASE TEMPERATURE
(SINUSOIDAL WAVEFORM)
MAXIMUM CASE TEMPERATURE, TCASE, (°C)
MAXIMUM POWER DISSIPATION
PER DIODE, (WATTS)
AVERAGE ON-STATE CURRENT, IF(avg), (AMPERES)
10-2
TIME, (s)
MAXIMUM ON-STATE
POWER DISSIPATION
(SINUSOIDAL WAVEFORM)
TBD
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.26°C/W
10-5
REVERSE RECOVERY SWITCHING LOSS
(TYPICAL)
101
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
ON-STATE CURRENT, IFM, (AMPERES)
2000
10-3
TBD
AVERAGE ON-STATE CURRENT, IF(avg), (AMPERES)
MAXIMUM POWER DISSIPATION
PER DIODE, (WATTS)
ON-STATE CHARACTERISTICS
(TYPICAL)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
QRD1210005
Split Dual SiC Super Fast Diode Module
100 Amperes/1200 Volts
TBD
AVERAGE ON-STATE CURRENT, IF(avg), (AMPERES)
MAXIMUM CASE TEMPERATURE, TCASE, (°C)
MAXIMUM ALLOWABLE
CASE TEMPERATURE
(RECTANGULAR WAVEFORM)
TBD
AVERAGE ON-STATE CURRENT, IF(avg), (AMPERES)
11/14 Rev. 1
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
3