QID4515002 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBT HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F C J (2TYP) N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING DEPTH) L (2TYP) Description: Powerex HVIGBTs feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clearance distance for many demanding applications like medium voltage drives and auxiliary traction applications. U (5TYP) P Q 1 4 5 6 2 8 3 7 Outline Drawing and Circuit Diagram Dimensions Inches Dimensions Inches Millimeters 140.0 L 0.69±0.01 17.5±0.25 2.87 73.0 M 0.38 9.75 1.89 48.0 N 0.20 5.0 A 5.51 B C Millimeters D 4.88±0.01 124.0±0.25 P 0.22 5.5 E 2.24±0.01 57.0±0.25 Q 1.44 36.5 F 1.18 30.0 R G 0.43 11.0 S H 1.07 27.15 J 0.20 5.0 K 1.65 42.0 V 0.16 4.0 M6 Metric M6 T 0.63 Min. 16.0 Min. U 0.11 x 0.02 2.8 x 0.5 0.28 Dia. 7.0 Dia. Features: -40 to 150°C Extended Temperature Range 100% Dynamic Tested 100% Partial Discharge Tested Advanced Mitsubishi R-Series Chip Technology Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance Complementary Line-up in Expanding Current Ranges to Mitsubishi HVIGBT Power Modules Copper Baseplate Creepage and Clearance Meet IEC 60077-1 Rugged SWSOA and RRSOA Applications: High Voltage Power Supplies Medium Voltage Drives Motor Drives Traction Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 11 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4515002 Dual IGBT HVIGBT Module 150 Amperes/4500 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings SymbolQID4515002 Units Junction Temperature Storage Temperature Collector-Emitter Voltage (VGE = 0V, Tj = -40 to +125°C) Tj -40 to 150 °C Tstg -40 to 125 °C VCES4500 Volts Collector-Emitter Voltage (VGE = 0V, Tj = -50°C) VCES4400 Volts Gate-Emitter Voltage (VCE = 0V) VGES±20 Volts Collector Current, DC (TC = 82°C) IC 150Amperes ICM300*1Amperes Peak Collector Current (Pulse) Diode Forward Current*2IF 150Amperes Diode Forward Surge Current (Pulse)*2IFM300*1Amperes I2t for Diode (t = 10ms) I2t Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) ≤ 150°C) PC 1500Watts Mounting Torque, M6 Terminal Screws — 44 in-lb Mounting Torque, M6 Mounting Screws — 44 in-lb — 900 Grams Module Weight (Typical) 10kA2sec Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) Viso 9.0kVolts Partial Discharge Qpd10 pC (V1 = 4800 VRMS, V2 = 3500 VRMS, f = 60Hz (Acc. to IEC 1287)) Maximum Short-Circuit Pulse Width, tpsc10 µs (VCC ≤ 3200V, VGE = ±15V, RG(off) ≥ 60Ω, Tj = 125°C) Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.8 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 13.3mA, VCE = 10V 5.8 6.3 6.8 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C — 3.8 — Volts IC = 150A, VGE = 15V, Tj = 125°C — 4.6 5.5 Volts QG VCC = 2800V, IC = 150A, VGE = 15V — 1.5 — µC IE = 150A, VGE = 0V, Tj = 25°C — 2.8 — Volts IE = 150A, VGE = 0V, Tj = 125°C — 3.2 3.8 Volts Total Gate Charge Emitter-Collector Voltage*2 VEC *1 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *2 Represents characteristics od rhw anti-parallel, emitter-to-collector free-wheel diode (FWDi). Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 2 11/14 Rev. 11 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4515002 Dual IGBT HVIGBT Module 150 Amperes/4500 Volts Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Max. Units —19 Typ. — nF — 1.22 — nF —0.55 — nF Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Turn-on Delay Time td(on) VCC = 2800V, IC = 133A, — 1.00 — µs tr VGE = ±15V, RG(on) = 24.3Ω, — 0.30 — µs td(off) RG(off) = 90Ω, LS = 150nH — tf Inductive Load Turn-on Switching Energy Eon Turn-off Switching Energy Eoff Rise Time Turn-off Delay Time Fall Time VGE = 0V, VCE = 10V, f = 100kHz 3.6 — µs —0.36 — µs Tj = 125°C, IC = 133A, VGE = ±15V, — 0.55 — J/P RG(on) = 24.3Ω, RG(off) = 90Ω, — 0.34 — J/P — 0.7 — µs VCC = 2800V, LS = 150nH , Inductive Load Diode Reverse Recovery Time*2 trr VCC = 2800V, IE = 133A, Qrr VGE = ±15V, RG(on) = 24.3Ω, — 111*1 — µC Diode Reverse Recovery Energy Erec LS = 150nH, Inductive Load — 172 — mJ/P Stray Inductance (C1-E2) LSCE —60 — nH Lead Resistance Terminal-Chip RCE — 0.8 — mΩ Test Conditions Min. Typ. Max. Units Diode Reverse Recovery Charge*2 Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Case*3 Rth(j-c) Q Per IGBT — — 0.083 °K/W Thermal Resistance, Junction to Case*3 Rth(j-c) D Per FWDi — — 0.157 °K/W — °K/W Thermal Resistance, Junction to Contact Thermal Resistance, Case to Fin Rth(c-f) Per Module, —0.018 Thermal Grease Applied, λgrease = 1W/mK Comparative Tracking Index — — Clearance Distance in Air (Terminal to Base) da(t-b) CTI 35.0— 600 — mm Creepage Distance Along Surface ds(t-b) 64 — — mm da(t-t) 19 — — mm ds(t-t) 54 — mm (Terminal to Base) Clearance Distance in Air (Terminal to Terminal) Creepage Distance Along Surface — (Terminal to Terminal) *1 Pulse width and repetition rate should be such that device junction temperature rise is negligible. *2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *3 TC measurement point is just under the chips. Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 11 3 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4515002 Dual IGBT HVIGBT Module 150 Amperes/4500 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 275 Tj = 25°C 220 15 13 VGE = 16V COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 275 11 165 10 110 55 0 0 2 4 6 220 165 110 55 0 8 VGE = 15V Tj = 25°C Tj = 125°C 0 275 6 8 275 VCE = VGE Tj = 25°C Tj = 150°C 220 EMITTER CURRENT, IE, (AMPERES) COLLECTOR-CURRENT, IC, (AMPERES) 4 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 165 110 55 0 2 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 4 8 12 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 16 220 165 110 55 0 Tj = 25°C Tj = 125°C 0 1 2 3 4 5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 4 11/14 Rev. 11 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4515002 Dual IGBT HVIGBT Module 150 Amperes/4500 Volts CAPACITANCE VS. VCE (TYPICAL) GATE CHARGE VS. VGE Cies 11.1 Coes 1.11 Cres VGE = 0V Tj = 25°C f = 100 kHz 0.11 10-1 SWITCHING ENERGIES, Eon, Eoff, Erec, (J/PULSE) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 1.76 100 101 1.32 1.10 0.88 0.66 0 -5 -10 0 0.55 1.10 1.65 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 1.32 0.22 0 5 GATE CHARGE, QG, (μC) 0.44 0 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) VCC = 2800V VGE = ±15V RG(on) = 24.3Ω RG(off) = 90Ω Ls = 150nH Tj = 125°C Inductive Load Eon Eoff Erec 1.54 VCE = 2800V IC = 133A Tj = 25°C 15 -15 102 SWITCHING ENERGIES, Eon, Erec, (J/PULSE) CAPACITANCE, Cies, Coes, Cres, (nF) 111.0 55 110 165 220 COLLECTOR CURRENT, IC, (AMPERES) 275 2.20 VCC = 2800V VGE = ±15V IC = 133A Ls = 150nH Tj = 125°C Inductive Load Eon Erec 1.10 0.88 0.66 0.44 0.22 0 0 9 18 27 36 45 GATE RESISTANCE, RG, (Ω) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 11 5 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4515002 Dual IGBT HVIGBT Module 150 Amperes/4500 Volts HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 0.88 0.66 SWITCHING TIMES, (ns) 1.10 0.44 VCC = 2800V VGE = ±15V RG(on) = 24.3Ω RG(off) = 90Ω 101 td(off) td(on) 100 tf tr 10-1 Ls = 150nH Tj = 125°C Inductive Load 0.22 102 0 45 90 135 110 1110 GATE RESISTANCE, RG, (Ω) COLLECTOR CURRENT, IC, (AMPERES) FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE BIAS SAFE OPERATING AREA (RBSOA) 1100.0 VCC = 2800V VGE = ±15V RG(on) = 24.3Ω Ls = 100 nH Irr 110.0 101 100 11.0 trr Tj = 125°C Inductive Load 10-1 11.0 10-2 11.0 180 110 EMITTER CURRENT, IC, (AMPERES) 1.1 1110 375 COLLECTOR CURRENT, IC, (AMPERES) 0 REVERSE RECOVERY TIME, trr, (ns) 102 VCC = 2800V VGE = ±15V IC = 133A Ls = 150nH Tj = 125°C Inductive Load Eoff REVERSE RECOVERY CURRENT, Irr, (AMPERES) SWITCHING ENERGIES, Eoff,, (J/PULSE) 1.32 HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 312 250 188 125 VCC ≤ 3200V VGE = ±15V RG(off) = 90Ω Tj = 125°C 63 0 0 1000 2000 3000 4000 5000 COLLECTOR EMITTER VOLTAGE, VCES, (VOLTS) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 6 11/14 Rev. 11 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4515002 Dual IGBT HVIGBT Module 150 Amperes/4500 Volts FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 1500 1250 1000 750 VCC ≤ 3300V VGE = ±15V RG(on) = 24.3Ω RG(off) = 90Ω Tj = 125°C 500 250 0 0 1000 2000 3000 4000 5000 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) COLLECTOR EMITTER VOLTAGE, VCES, (VOLTS) 375 VCC ≤ 3200V di/dt < 660A/µs Tj = 125°C 312 250 188 125 63 0 0 1000 2000 3000 4000 5000 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 1.2 1.0 0.8 0.6 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.083K/W (IGBT) Rth(j-c) = 0.157K/W (FWDi) 0.4 0.2 0 10-3 10-2 10-1 100 101 TIME, (s) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 11 7