Single IGBT NFM-Series Module CM400HC

CM400HC-24NFM
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
Single IGBT
NFM-Series Module
400 Amperes/1200 Volts
G
H
U (2 TYP.)
J
V (4 TYP.)
K L M B
F
E
G
C
E
W
W
E
D
Description:
Powerex NFM IGBT Modules
are designed for use in hard
switching (15-30 kHz) applications. Each module consists of
one IGBT Transistor in a single
configuration with a reverse-connected super-fast recovery freewheel diode. All components and
interconnects are isolated from
the heat sinking baseplate, offering simplified system assembly
and thermal management.
A
N
P
Q
R S
C
T
C
G
E
E
Outline Drawing and Circuit Diagram
Dim.
Inches
Millimeters
Dim.
Inches
Millimeters
M
1.89
48.0
A
4.25
108.0
B
2.44
62.0
N
0.94
24.0
P
0.23
6.0
C
1.016
25.8
D
3.66±0.01
93.0±0.25
Q
0.85
21.5
R
0.14
3.5
0.96
24.4
E
3.15
80.0
F
0.79
20.0
S
T
G
0.94
24.0
H
0.79
20.0
U
M6
M6
V
0.26 Dia.
6.5 Dia.
W
0.62
15.8
J
1.14
29.0
K
0.80
20.4
L
1.38
35.0
02/07
1.45+0.04/-0.0236.8+1.0/-0.5
Features:
£ Low Drive Power
£ Low ESW(off)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ Power Supplies
£ UPS
£ Battery Powered Supplies
£ Induction Heating
Ordering Information:
Example: Select the complete
part module number you
desire from the table below -i.e.
CM400HC-24NFM is a 1200V
(VCES), 400 Ampere Single
IGBT Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM
400
24
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM400HC-24NFM
Single IGBT NFM-Series Module
400 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM400HC-24NFM
Units
Tj
–40 to 150
°C
Junction Temperature
Storage Temperature
Tstg
–40 to 125
°C
Collector-Emitter Voltage (G-E Short)
VCES
1200
Volts
Gate-Emitter Voltage (C-E Short)
VGES
±20
Volts
IC
400
Amperes
ICM
800*
Amperes
IE
400
Amperes
Collector Current
Peak Collector Current
Emitter Current**
Peak Emitter Current**
IEM
800*
Amperes
Maximum Collector Dissipation*** (TC = 25°C)****
PC
2710
Watts
Mounting Torque, M6 Main Terminal
—
40
in-lb
Mounting Torque, M6 Mounting
—
40
in-lb
Mounting Torque, G(E) Terminal M4
—
15
in-lb
Weight
—
370
Grams
VISO
2500
Volts
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Symbol
Test Conditions
Min.
Typ.
Max.
Units
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
IGES
VGE = VGES, VCE = 0V
—
—
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 40mA, VCE = 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage*****
VCE(sat)
IC = 400A, VGE = 15V, Tj = 25°C
—
3.0
4.5
Volts
IC = 400A, VGE = 15V, Tj = 125°C
—
3.0
—
Volts
Total Gate Charge
QG
VCC = 600V, IC = 400A, VGE = 15V
—
1800
—
nC
Emitter-Collector Voltage**
VEC
IE = 400A, VGE = 0V
—
2.0
3.0
Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Min.
Typ.
Max.
Units
Input Capacitance
Symbol
Cies
Test Conditions
—
—
63
nF
Output Capacitance*****
Coes
—
—
5.3
nF
Reverse Transfer Capacitance
Cres
—
—
1.2
nF
Inductive
Turn-on Delay Time
td(on)
Load
Rise Time
Switch
Turn-off Delay Time
Time
Fall Time
VCE = 10V, VGE = 0V
—
—
300
ns
—
—
100
ns
tr
VCC = 600V, IC = 400A,
td(off)
VGE1 = VGE2 = 15V, RG = 0.78Ω,
—
—
500
ns
tf
Inductive Load —
60
200
ns
Diode Reverse Recovery Time**
trr
Switching Operation,
—
120
200
ns
Diode Reverse Recovery Charge**
Qrr
IE = 400A
—
24 —
µC
*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***Junction temperature (Tj) should not increase beyond 150°C.
****TC , Tf measured point is just under the chips.
*****Pulse width and repetition rate should be such as to cause neglible temperature rise.
02/07
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM400HC-24NFM
Single IGBT NFM-Series Module
400 Amperes/1200 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Rth(j-c)Q
Per IGBT 1/2 Module,
—
—
0.046
°C/W
—
—
0.07
°C/W
—
0.02
—
°C/W
0.78
—
7.8
Ω
Thermal Resistance, Junction to Case
TC Measured Point Just Under Chips
Rth(j-c)D
Contact Thermal Resistance,
Per FWDi 1/2 Module,
TC Measured Point Just Under Chips
Rth(c-f)
Per 1/2 Module, Thermal Grease Applied
Case to Fin
RG
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
VGE = 20V
12
600
400
10
200
9
8
0
2
4
6
8
3
2
1
0
200
400
101
100
800
0
1
2
3
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
CAPACITANCE VS. VCE
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
103
td(on)
SWITCHING TIME, (ns)
Cies
101
Coes
100
102
tr
101
VCC = 600V
VGE = ±15V
RG = 0.78Ω
Tj = 125°C
Inductive Load
Cres
VGE = 0V
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
100
101
103
td(off)
tf
10-1
10-1
102
COLLECTOR-CURRENT, IC, (AMPERES)
102
02/07
600
VGE = 0V
Tj = 25°C
Tj = 125°C
COLLECTOR CURRENT, IC, (AMPERES)
103
CAPACITANCE, Cies, Coes, Cres, (nF)
4
0
10
VGE = 15V
Tj = 25°C
Tj = 125°C
102
COLLECTOR CURRENT, IC, (AMPERES)
103
REVERSE RECOVERY TIME, trr, (ns)
0
103
5
Tj = 25°C
15
13
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
800
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT, IE, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
102
101
101
VCC = 600V
VGE = ±15V
RG = 0.78Ω
Tj = 125°C
Inductive Load
Irr
trr
102
102
101
103
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
External Gate Resistance
EMITTER CURRENT, IE, (AMPERES)
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM400HC-24NFM
Single IGBT NFM-Series Module
400 Amperes/1200 Volts
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
VCC = 600V
10
5
0
400
800
1200
1600
100
101
2000
102
103
GATE CHARGE, QG, (nC)
COLLECTOR CURRENT, IC, (AMPERES)
REVERSE RECOVERY SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
102
102
VCC = 600V
VGE = ±15V
RG = 0.78Ω
Tj = 125°C
Inductive Load
101
100
101
102
COLLECTOR CURRENT, IC, (AMPERES)
101
102
VCC = 600V
VGE = ±15V
RG = 0.78Ω
Tj = 125°C
Inductive Load
Eon
Eoff
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
SWITCHING LOSS, E(on), E(off), (mJ/PULSE)
VCC = 400V
15
0
SWITCHING LOSS, Err, (mJ/PULSE)
102
IC = 400A
SWITCHING LOSS, Err, (mJ/PULSE)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
20
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
103
101
100
10-1
101
10-2
101
GATE RESISTANCE, RG, (Ω)
101
102
GATE RESISTANCE, RG, (Ω)
VCC = 600V
VGE = ±15V
IC = 400A
Tj = 125°C
Inductive Load
100
100
VCC = 600V
VGE = ±15V
IC = 400A
Tj = 125°C
Inductive Load
Eon
Eoff
100
100
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
GATE CHARGE VS. VGE
102
10-3
10-3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10-2
10-1
100
101
10-1
Single Pulse
TC = 25°C
Under the Chip
Per Unit Base =
Rth(j-c) =
0.46°C/W
(IGBT)
Rth(j-c) =
0.07°C/W
(FWDi)
10-2
10-5
10-4
10-3
10-3
TIME, (s)
02/07