CM600DU-24NF Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ NF-Series Module 600 Amperes/1200 Volts A D F E G H J W K G2 M X X X LABEL N G1 Q P C1 R E1 L E2 B C2E1 E2 N Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. V NUTS (4 PLACES) T (4 PLACES) U NUTS (3 PLACES) TC MEASURED POINT (BASEPLATE) C Y S G2 E2 C2E1 E2 Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Dimensions Inches Millimeters A 5.51 140.0 N 0.57 14.5 B 5.12 130.0 P 1.57 40.0 Q 2.56 65.0 C Millimeters 1.38+0.04/-0.02 35.0+1.0/-0.5 D 5.12 130.0 R 0.79 20.0 E 0.39 10.0 S 0.31 8.0 F 4.33±0.01 110.0±0.25 T 0.26 Dia. Dia.6.5 G 0.54 13.8 U M8 Metric M8 H 1.42 36.0 V M4 Metric M4 J 0.45 11.5 W 1.72 43.8 1.02 26.0 K 0.39 10.0 X L 4.33±0.01 110.0±0.25 Y M 0.80 20.4 Applications: £ AC Motor Control £ UPS £ Battery Powered Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM600DU-24NF is a 1200V (VCES), 600 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 600 24 0.96+0.04/-0.02 24.5+1.0/-0.5 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-24NF Dual IGBTMOD™ NF-Series Module 600 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM600DU-24NF Units Tj –40 to 150 °C Junction Temperature Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts IC 600 Amperes ICM 1200* Amperes IE 600 Amperes Peak Emitter Current** IEM 1200* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 2080 Watts Mounting Torque, M8 Main Terminal — 95 in-lb Mounting Torque, M6 Mounting — 40 in-lb Gate Emitter Terminal Torque, M4 Mounting — 15 in-lb Weight – 1200 Grams VISO 2500 Volts Collector Current*** (DC, TC´ = 109°C) Peak Collector Current Emitter Current** (TC = 25°C) Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 1.0 mA IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 6.0 7.0 8.0 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 15V, Tj = 25°C — 1.95 2.65 Volts IC = 600A, VGE = 15V, Tj = 125°C — 2.15 — Volts Total Gate Charge QG VCC = 600V, IC = 600A, VGE = 15V — 4000 — nC Emitter-Collector Voltage** VEC IE = 600A, VGE = 0V — — 3.35 Volts Min. Typ. Max. Units — — 140 nf — — 12 — — Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Inductive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Time Fall Time Test Conditions VCE = 10V, VGE = 0V nf nf — — 800 ns — — 180 ns tr VCC = 600V, IC = 600A, td(off) VGE1 = VGE2 = 15V, RG = 1.0Ω, — — 900 ns tf Inductive Load — — 350 ns Diode Reverse Recovery Time** trr Switching Operation, — — 300 ns Diode Reverse Recovery Charge** Qrr IE = 600A — 28 — µC *Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). ***TC´ measured point is just under the chips. If this value is used, Rth(f-a) should be measured just under the chips. 2 2.7 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-24NF Dual IGBTMOD™ NF-Series Module 600 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Test Conditions Min. Typ. Max. Units Rth(j-c)Q Per IGBT 1/2 Module, TC Reference — — 0.06 °C/W — — 0.11 °C/W — — 0.023 °C/W — 0.019 — °C/W 1.0 — 10.0 Ω Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, TC Reference Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)´Q Per IGBT 1/2 Module, TC Reference Point Under Chips Contact Thermal Resistance Rth(c-f) External Gate Resistance 600 10 9 0 2 4 6 8 3 2 1 0 10 300 0 600 900 6 IC = 600A IC = 240A 4 2 6 8 10 12 14 16 18 20 COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 103 Tj = 25°C Tj = 125°C 102 Cies 102 101 Coes Cres 100 VGE = 0V 0 IC = 1200A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 101 Tj = 25°C 8 0 1200 SWITCHING TIME, (ns) 0 VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 11 104 EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 900 300 10 4 Tj = 25oC 12 13 15 CAPACITANCE, Cies, Coes, Cres, (nF) COLLECTOR CURRENT, IC, (AMPERES) VGE = 20V COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 1200 Per 1/2 Module, Thermal Grease Applied RG 1 2 3 4 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) td(off) td(on) 103 tf tr 102 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load 101 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-24NF Dual IGBTMOD™ NF-Series Module 600 Amperes/1200 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 VCC = 600V VGE = 15V RG = 1.0Ω Tj = 25°C Inductive Load 101 101 101 103 102 IC = 600A 16 VCC = 400V 12 VCC = 600V 8 4 0 1200 0 EMITTER CURRENT, IE, (AMPERES) 100 10-1 VCC = 600V VGE = 15V IC = 600A Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 101 GATE RESISTANCE, RC, () 4 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 103 101 100 2400 3600 4800 6000 102 10-2 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.06°C/W (IGBT) Rth(j-c) = 0.11°C/W (FWDi) 10-2 10-5 TIME, (s) 10-4 103 102 VCC = 600V VGE = 15V RG = 1.0Ω Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 101 100 101 102 COLLECTOR CURRENT, IC, (AMPERES) GATE CHARGE, QG, (nC) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 102 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 Irr trr REVERSE RECOVERY CURRENT, Irr, (AMPERES) REVERSE RECOVERY TIME, trr, (ns) 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) GATE CHARGE VS. VGE 10-3 10-3 103