Powerex CM400HA-24H Datasheet

CM400HA-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Single IGBTMOD™
H-Series Module
400 Amperes/1200 Volts
A
B
F
J
H
K
Q - THD
E
C
(2 TYP.)
E
C
J
G
P - DIA.
M
R - THD
(4 TYP.)
L
(2 TYP.)
E
G
N
E
C
E
G
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Dimensions
Inches
Millimeters
A
4.21
107.0
J
0.79
20.0
B
3.661±0.01
93.0±0.25
K
0.69
17.5
C
2.44
62.0
L
0.63
16.0
D
1.89±0.01
48.0±0.25
M
0.35
9.0
E
F
G
H
1.42+0.04/-0.02 36.0+1.0/-0.5
1.14
29.0
1.02+0.04/-0.2 25.8+1.0/-0.5
0.94
24.0
N
0.28
7.0
P
0.26 Dia.
Dia. 6.5
Q
M6 Metric
M6
R
M4 Metric
M4
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
(135ns) Free-Wheel Diode
£ High Frequency Operation
(20-25kHz)
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Welding Power Supplies
£ Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM400HA-24H
is a 1200V (VCES), 400 Ampere
Single IGBTMOD™ Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM
400
24
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400HA-24H
Single IGBTMOD™ H-Series Module
400 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM400HA-24H
Units
Junction Temperature
Tj
–40 to 150
°C
Storage Temperature
Tstg
–40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
1200
Volts
Gate-Emitter Voltage
VGES
±20
Volts
IC
400
Amperes
ICM
800*
Amperes
Collector Current
Peak Collector Current
Diode Forward Current
IF
400
Amperes
Diode Forward Surge Current
IFM
800*
Amperes
Power Dissipation
Pd
2800
Watts
Max. Mounting Torque M6 Terminal Screws
–
26
in-lb
Max. Mounting Torque M6 Mounting Screws
–
26
in-lb
Module Weight (Typical)
–
400
Grams
VRMS
2500
Volts
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Symbol
Test Conditions
Min.
Typ.
Max.
Units
ICES
VCE = VCES, VGE = 0V
–
–
2.0
mA
IGES
VGE = VGES, VCE = 0V
–
–
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 40mA, VCE = 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 400A, VGE = 15V
–
2.5
3.4**
Volts
IC = 400A, VGE = 15V, Tj = 150°C
–
2.25
–
Volts
Total Gate Charge
QG
VCC = 600V, IC = 400A, VGS = 15V
–
2000
–
nC
Diode Forward Voltage
VFM
IE = 400A, VGS = 0V
–
–
3.4
Volts
Min.
Typ.
Max.
Units
–
–
–
–
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
td(on)
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
Test Conditions
VGE = 0V, VCE = 10V, f = 1MHz
tr
VCC = 600V, IC = 400A
td(off)
VGE1 = VGE2 = 15V, RG = 0.78Ω
tf
80
nF
–
28
nF
–
16
nF
–
–
300
ns
–
–
500
ns
–
–
350
ns
–
–
350
ns
Diode Reverse Recovery Time
trr
IE = 400A, diE/dt = –800A/µs
–
–
250
ns
Diode Reverse Recovery Charge
Qrr
IE = 400A, diE/dt = –800A/µs
–
2.97
–
µC
Test Conditions
Min.
Typ.
Max.
Units
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
2
Characteristics
Symbol
Thermal Resistance, Junction to Case
Rth(j-c)
Per IGBT
–
–
0.045
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)
Per FWDi
–
–
0.09
°C/W
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
–
–
0.040
°C/W
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400HA-24H
Single IGBTMOD™ H-Series Module
400 Amperes/1200 Volts
15
VGE = 20V
11
480
320
10
9
160
7
640
480
320
160
8
0
0
2
4
6
8
10
0
4
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
0
160
320
480
800
640
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. VCE
(TYPICAL)
IC = 400A
4
2
IC = 160A
8
12
16
102
20
0
0.8
1.6
2.4
3.2
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
td(off)
tf
td(on)
102
VCC = 600V
VGE = ±15V
RG = 0.78Ω
Tj = 125°C
COLLECTOR CURRENT, IC, (AMPERES)
Coes
101
103
101
di/dt = -800A/µsec
Tj = 25°C
101
101
102
EMITTER CURRENT, IE, (AMPERES)
100
102
101
GATE CHARGE, VGE
Irr
t rr
10-1
Cres
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
102
102
100
4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
102
Cies
VGE = 0V
f = 1MHz
101
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
tr
102
100
103
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
6
101
101
1
0
20
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
IC = 800A
4
2
Tj = 25°C
8
0
3
103
Tj = 25°C
REVERSE RECOVERY TIME, t rr, (ns)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
16
103
103
SWITCHING TIME, (ns)
12
4
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
0
8
VGE = 15V
Tj = 25°C
Tj = 125°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
0
5
VCE = 10V
Tj = 25°C
Tj = 125°C
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
640
800
12
Tj = 25oC
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
800
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
IC = 400A
16
VCC = 400V
VCC = 600V
12
8
4
0
0
800
1600
2400
3200
GATE CHARGE, QG, (nC)
CM400HA-24H.01-.09
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
10-3
101
100
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = R th(j-c) = 0.045°C/W
100
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
101
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)
Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)
Zth = Rth • (NORMALIZED VALUE)
CM400HA-24H
Single IGBTMOD™ H-Series Module
400 Amperes/1200 Volts
10-3
10-3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = R th(j-c) = 0.09C/W
10-1
10-1
10-2
10-2
10-3
10-5
10-4
10-3
10-3
TIME, (s)
CM400HA-24H.10-.11
4