QIQ0645003 Low Side Chopper IGBT Module 600V 450A

QIQ0645003
Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 (724) 925-7272
www.pwrx.com
Low side Chopper IGBT Module
600V 450A IGBT / 600V 450A Fast Diode
Description:
Powerex Low side Chopper
IGBT Module designed
specially for customer applications.
The modules are isolated for easy
mounting with other components on
a common heatsink.
Features:
„
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Note:
This chopper module is intended to be used
in circuits in which no positive voltage ever
appears from E2 to C2E1
Low Drive Requirement
Low VCE(sat)
Super Fast Diode
(3) H Series 150A 600V
Chips per IGBT Switch
(9) H Series 100A 600V
Chips per Diode
Isolated Baseplate for Easy
Heat Sinking
Low Thermal Impedance
Isolated Material: DBC Aluminum
Nitride Ceramic
Applications:
Dim
Inches
Millimeters
Dim
Inches
Millimeters
A
B
C
D
E
F
G
H
J
4.25
2.44
1.14+0.04/-0.02
3.66±0.01
1.88±0.01
0.67
0.16
0.24
0.59
108.0
62.0
29+1.0/-0.5
93.0±0.25
48.0±0.25
17.0
4.0
6.0
15.0
K
L
M
N
P
Q
R
S
T
0.55
0.87
0.33
0.10
0.85
0.98
0.11
0.25 Dia.
0.6
14.0
22.0
8.5
2.5
21.5
25.0
2.8
6.5 Dia.
15.15
Preliminary
Page 1
„ Choppers
„ Welding Power Supplies
03/06/2008
QIQ0645003
Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 (724) 925-7272
www.pwrx.com
Low side Chopper IGBT Module
600V 450A IGBT / 600V 450A Fast Diode
Maximum Ratings, Tj=25°C unless otherwise specified
Ratings
Symbol
QIQ0645003
Units
Collector Emitter Voltage
VCES
600
Volts
Gate Emitter Voltage
VGES
±20
Volts
Collector Current
IC
450
Amperes
Peak Collector Current
ICM
900
Amperes
IFM
450
Amperes
Diode Forward Surge Current
IFM
5400
Amperes
Junction Temperature
Tstg
-40 to 125
°C
Mounting Torque, M6 Terminal Screws
-
40
In-lb
Mounting Torque, M6 Mounting Screws
-
40
In-lb
Module Weight (Typical)
-
400
Grams
VRMS
2000
Volts
Diode Average Forward Current
180° Conduction, TC=100°C
V Isolation
Static Electrical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
ICES
IGES
VCE=VCES VGE=0V
VGE=VGES VCE=0V
-
-
1.0
0.5
mA
Gate-Emitter Threshold Voltage
VGE(th)
IC=45mA, VCE=10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC=450A, VGE=15V
-
2.1
2.8
Volts
IC=450A, VGE=15V,
Tj=125°C
-
2.15
-
Volts
VCC=300V,
IC=450A, VGS=15V
IF=900A
-
1350
-
nC
-
2.0
2.8
Volts
Collector Cutoff Current
Gate Leakage Current
Total Gate Charge
QG
Diode Forward Voltage
VFM
μA
IF=450A
-
1.7
2.2
Volts
IF=300A
-
1.3
-
Volts
Max.
Units
Dynamic Electrical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Symbol
Test Conditions
Min.
Typ.
Input Capacitance
Cies
-
45
nF
Coes
VGE=0V
VCE=10V
f=1MHz
-
Output Capacitance
-
-
15.9
nF
-
-
9
ns
VCC=300V
IC=450A
VGE1=VGE2=15V
RG=1.6Ω
-
-
350
ns
-
-
600
ns
-
-
350
ns
-
-
300
ns
-
-
110
ns
-
2.43
-
μC
Reverse Transfer Capacitance
Cres
Turn on Delay time
td(on)
Rise Time
Turn- off Delay Time
Fall Time
tr
td(off)
tf
Diode Reverse Recovery Time
trr
Diode Reverse Recovery Charge
Qrr
IF=900A
diF/dt=-1800A/μS
Thermal and Mechanical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Thermal Resistance, Junction to Case
Symbol
Test Conditions
Min.
Typ.
Max.
Units
RθJC
Per IGBT
-
0.045
TBD
°C/W
Thermal Resistance, Junction to Case
RθJC
Per Diode
-
0.05
TBD
°C/W
Contact Thermal Resistance
RθCF
Per Module
-
0.02
-
°C/W
Preliminary
Page 2
03/06/2008