MG200J6ES61 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six IGBTMOD™ Compact IGBT Series Module 200 Amperes/600 Volts A D L J K H M U G N P DETAIL "A" C B U V F E W H Q N Q T S R P R V P W X CN-1 CN-2 P CN-1:7 CN-1:6 CN-1:4 CN-1:2 4 2 1 3 4 3 6 5 8 7 Y 2 1 CN-1:8 CN-1:5 CN-1:3 CN-1:1 U V W CN-2:3 CN-2:2 Y Z CN-2:1 CN-1 SIGNAL TERMINAL 1 E(W) 2 G(W) CN-2:4 AA DETAIL "A" 3 E(V) 4 G(V) 5 E(U) 6 G(U) 7 TH1 8 TH2 CN-2 SIGNAL TERMINAL N 1 G(Z) 2 G(Y) 3 G(X) 4 E(L) Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N 5/05 Inches 4.80±0.04 1.97±0.01 1.61±0.03 4.33±0.01 2.44±0.04 2.32±0.02 0.81±0.03 0.39±0.03 0.55 0.39 0.24 0.22 Dia. M5 Millimeters 122.0±1.0 50.0±0.3 42.0±0.8 110.0±0.3 62.0±1.0 59.0±0.5 20.5±0.8 10.0±0.8 14.0 10.0 6.0 5.5 Dia. M5 Dimensions Inches Millimeters P 0.79±0.03 20.0±0.8 Q 0.86±0.03 22.0±0.8 R 1.12±0.03 28.5±0.8 S 0.55±0.03 13.9±0.8 T 0.24 Rad. 6.0 Rad. U 0.53 13.6 V 1.02 -0.01/+0.04 26.0-0.3/+1.0 W 0.32 8.2 X 4.69±0.02 119.0±0.5 Y 0.88 22.5 Z 0.21 5.35 AA 0.42 10.7 Description: Powerex Six IGBTMOD™ Compact IGBT Series Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Integrated Thermistor £ Low VCE(sat) £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ UPS £ Welding Power Supplies £ Laser Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. MG200J6ES61 is a 600V (VCES), 200 Ampere Six IGBTMOD™ Compact IGBT Series Module. Type Current Rating Amperes VCES Volts (x 10) MG 200 60 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG200J6ES61 Six IGBTMOD™ Compact IGBT Series Module 200 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Power Device Junction Temperature Storage Temperature Symbol MG200J6ES61 Units Tj -20 to 150 °C Tstg -40 to 125 °C Mounting Torque, M5 Mounting Screws — 31 in-lb Mounting Torque, M5 Main Terminal Screws — 31 in-lb Module Weight (Typical) — 375 Grams VISO 2500 Volts Isolation Voltage, AC 1 minute, 60Hz Sinusoidal IGBT Inverter Sector Collector-Emitter Voltage (VD = 15V, VCIN = 15V) VCES 600 Volts Gate-Emitter Voltage VGES ±20 Volts IC 200 Amperes ICP 400 Amperes IE 200 Amperes Peak Emitter Current (TC = 25°C) IEM 400 Amperes Collector Dissipation (TC = 25°C) PC 1000 Watts Collector Current (TC = 25°C) Peak Collector Current (TC = 25°C) Emitter Current (TC = 25°C) Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IGBT Inverter Sector Gate Leakage Current IGES VGE = 20V, VCE = 0V — — ±500 nA Collector-Emitter Cutoff Current ICES VGE = 0V, VCE = 600V — — 1.0 mA Gate-Emitter Cutoff Voltage VGE(off) VCE = 5V, IC = 200mA 5.0 6.5 8.0 Volts Collector-Emitter Saturation Voltage VCE(sat) Input Capacitance Cies Inductive Load td(on) Switching VGE = 15V, IC = 200A, Tj = 25°C — 2.0 2.4 Volts VGE = 15V, IC = 200A, Tj = 125°C — — 2.6 Volts VCE = 10V, VGE = 0V, f = 1MHz — 40,000 — pF — — 1.0 µs toff VCC = 300V, IC = 200A, — — 1.2 µs Times tf VGE = ±15V, RG = 10Ω — — 0.5 µs Reverse Recovery Time trr — — 0.3 µs Emitter-Collector Voltage VEC IE = 200A — 2.2 2.6 Volts Symbol Condition Min. R25 ITM = 0.2mA B Value B25/85 TC = 25°C/TC = 85°C Junction to Case Thermal Resistance Rth(j-c)Q Rth(j-c)D Thermal Characteristics Characteristic Zero Power Resistance Contact Thermal Resistance Rth(c-f) Typ. Max. Units 100 — kΩ — 4390 — K IGBT (Per 1/6 Module) — — 0.125 °C/Watt FWDi (Per 1/6 Module) — — 0.195 °C/Watt — 0.05 — °C/Watt Value Units ≤400 Volts — Recommended Conditions for Use Characteristic Symbol Condition Supply Voltage VCC Applied across P-N Terminals Gate Voltage VGE — fC — Switching Frequency 2 13.5 ~ 16.5 Volts 0 ~ 20 kHz 5/05 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG200J6ES61 Six IGBTMOD™ Compact IGBT Series Module 200 Amperes/600 Volts OUTPUT CHARACTERISTICS (TYPICAL) 12 500 400 300 200 100 0 0.5 1.0 1.5 2.0 2.5 3.0 400 300 200 100 0 3.5 VGE = 0V Tj = 25°C Tj = 125°C Tj = -40°C 0 COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 2.0 2.5 3.0 10 IC = 400A 8 IC = 200A 6 IC = 100A 4 2 0 5 10 15 SWITCHING LOSS, E(on), (mJ/PULSE) 101 0 50 100 150 200 COLLECTOR CURRENT, IC, (AMPERES) 250 2 0 5 10 15 20 TRANSFER CHARACTERISTICS (TYPICAL) 500 Tj = -40°C 10 IC = 400A 8 IC = 200A 6 IC = 100A 4 2 0 5 10 15 300 200 100 0 2 4 6 8 10 12 GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) SWITCHING LOSS (ON) VS. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS (OFF) VS. GATE RESISTANCE (TYPICAL) 14 102 VCC = 300V VGE = ±15V RG = 10Ω Tj = 25°C Tj = 125°C 101 100 VCE = 5V Tj = 25°C Tj = 125°C Tj = -40°C 400 0 20 102 VCC = 300V VGE = ±15V RG = 10Ω Tj = 25°C Tj = 125°C IC = 100A 4 0 3.5 SWITCHING LOSS, E(off), (mJ/PULSE) 102 IC = 200A 6 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 20 IC = 400A 8 GATE-EMITTER VOLTAGE, VGE, (VOLTS) SWITCHING LOSS (OFF) VS. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS, E(off), (mJ/PULSE) 1.5 Tj = 25°C 10 FORWARD VOLTAGE, VF, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 5/05 1.0 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 125°C 100 0.5 12 12 0 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 15V Tj = 25°C Tj = 125°C FORWARD CURRENT, IF, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 500 0 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE CHARACTERISTICS (TYPICAL) 0 50 100 150 200 COLLECTOR CURRENT, IC, (AMPERES) 250 VCC = 300V VGE = ±15V RG = 10Ω Tj = 25°C Tj = 125°C 101 100 0 5 10 15 20 25 GATE RESISTANCE, RG, (Ω) 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG200J6ES61 Six IGBTMOD™ Compact IGBT Series Module 200 Amperes/600 Volts SWITCHING LOSS (ON) VS. GATE RESISTANCE (TYPICAL) CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE (TYPICAL) 105 VCC = 300V VGE = ±15V RG = 200A Tj = 25°C Tj = 125°C 500 10 15 20 25 COLLECTOR CURRENT, IC, (AMPERES) Cres 103 VGE = 0V f = 1MHz TC = 25°C 10-1 100 101 400 300 200 0 102 VGE = ±15V RG = 10Ω Tj ≤ 125°C 100 0 100 200 300 400 500 600 700 GATE RESISTANCE, RG, (Ω) GATE-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE CHARGE VS. COLLECTOR-EMITTER VOLTAGE (TYPICAL) GATE CHARGE VS. GATE-EMITTER VOLTAGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 20 IC = 200A 300 200 100 0 Coes 102 10-2 30 400 0 104 500 1000 1500 2000 2500 GATE CHARGE, QG, (nC) 101 IC = 200A TC = 25°C 16 12 200V TRANSIENT IMPEDANCE, Rth(j-c) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) 101 5 500 Cies GATE-EMITTER VOLTAGE, VGE, (VOLTS) SWITCHING LOSS, ESW(on), (mJ/PULSE) 102 100 REVERSE BIAS SAFE OPERATION AREA (TYPICAL) 300V 100V 8 VCE = 0V 4 0 100 10-1 SINGLE PULSE STANDARD VALUE = Rth(j-c)D = 0.125°C/W 0 500 1000 1500 2000 GATE CHARGE, QG, (nC) 2500 10-2 10-3 10-2 10-1 100 101 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 TRANSIENT IMPEDANCE, Rth(j-c) TC = 25°C 100 10-1 SINGLE PULSE STANDARD VALUE = Rth(j-c)D = 0.195°C/W 10-2 10-3 10-2 10-1 100 101 TIME, (s) 4 5/05