CM600HB-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Single IGBTMOD™ A-Series Module 600 Amperes/1200 Volts A C Y - THD (2 TYP.) M E E C P D B E U R G T V - THD (2 TYP.) Q X - DIA. (4 TYP.) G L Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. N Z J J S K H F W E Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking C E G Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters N 0.69 17.5 A 4.33 110.0 B 3.15 80.0 P 0.61 15.5 Q 0.51 13.0 C 3.66±0.008 93.0±0.25 D 2.44±0.008 62.0±0.25 R 0.49 12.5 S 0.45 11.5 E 1.57 40.0 F 1.42 Max. 36.0 Max. T 0.43 11.0 U 0.35 9.0 M8 G 1.14 29.0 H 1.00 Max. 25.5 Max V M8 Metric W 0.28 Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM600HB-24A is a 1200V (VCES), 600 Ampere Single IGBTMOD™ Power Module. J 0.94 24.5 K 0.94 24.5 X 0.256 Dia. 6.50 Dia. Y M4 Metric M4 Type Current Rating Amperes VCES Volts (x 50) Z 0.12 3.04 CM 600 24 L 0.83 21.0 M 0.71 18.0 01/10 Rev. 1 7.0 Applications: £ DC Chopper £ Inverter £ UPS £ Forklift 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600HB-24A Single IGBTMOD™ A-Series Module 600 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol CM600HB-24A Units Tj –40 to 150 °C Junction Temperature Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts IC 600 Amperes Collector Current (DC, TC = 80°C)*4 Peak Collector Current (Pulse, Repetitive)*2 ICM 1200 Amperes Maximum Collector Dissipation (TC = 25°C)*2,*4 PC 3670 Watts 1 Emitter Current (TC = 25°C) IE* 600 Amperes IEM*1 1200 Amperes Mounting Torque, M8 Main Terminal — 95 in-lb Mounting Torque, M6 Mounting — 26 in-lb Mounting Torque, M4 G(E) Terminal — 13 in-lb Weight — 560 Grams VISO 2500 Volts Peak Emitter Current (Pulse, Repetitive)*2 Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.) Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 1.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 6.0 7.0 8.0 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 15V, Tj = 25°C*3 — 2.1 3.0 Volts Total Gate Charge QG Emitter-Collector Voltage 1 VEC* IC = 600A, VGE = 15V, Tj = 125°C*3 — 2.4 — Volts VCC = 600V, IC = 600A, VGE = 15V — 3000 — nC — — 3.8 Volts Min. Typ. Max. Units — — 105 nf — — 9 nf 3 IE = 600A, VGE = 0V* Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Input Capacitance Cies Output Capacitance Coes Test Conditions VCE = 10V, VGE = 0V Reverse Transfer Capacitance Cres — — Inductive Turn-on Delay Time td(on) — — Load Rise Time Switch Turn-off Delay Time Time Fall Time 2.0 660 nf ns tr VCC = 600V, IC = 600A, — — 190 ns td(off) VGE1 = VGE2 = 15V, RG = 0.52Ω, — — 700 ns tf Inductive Load — — 350 ns Diode Reverse Recovery Time trr*1 Switching Operation, — — 250 ns Diode Reverse Recovery Charge Qrr*1 IE = 600A — 19.0 — µC *1 *2 *3 *4 2 Symbol Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips. 01/10 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600HB-24A Single IGBTMOD™ A-Series Module 600 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Units — — 0.034 °C/W — 0.053 °C/W — 0.02 — °C/W 0.52 — 7.8 Ω Rth(j-c)Q Per IGBT* Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi*4 Rth(c-f) Thermal Grease Applied*4,*5 External Gate Resistance Max. — Thermal Resistance, Junction to Case Contact Thermal Resistance Typ. 4 RG *4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips. *5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. 15 900 12 600 11 300 10 9 0 2 4 6 8 1 300 0 600 900 IC = 1200A 6 IC = 600A IC = 240A 4 2 0 1200 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 103 103 102 Tj = 25°C Tj = 125°C 0 8 COLLECTOR-CURRENT, IC, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 2 Tj = 25°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 104 101 3 0 10 VGE = 15V Tj = 25°C Tj = 125°C 1 2 3 4 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 01/10 Rev. 1 102 101 Coes Cres 100 td(off) 102 tr VCC = 600V VGE = 15V RG = 0.52Ω Tj = 125°C Inductive Load VGE = 0V 5 10-1 10-1 100 101 20 tf td(on) Cies SWITCHING TIME, (ns) 0 10 4 Tj = 25°C 13 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 1200 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 101 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600HB-24A Single IGBTMOD™ A-Series Module 600 Amperes/1200 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) Irr trr 101 101 103 102 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) 4 0 900 1800 2700 3600 4500 ESW(on) ESW(off) 100 101 102 103 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 102 100 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 102 Err 101 100 101 VCC = 600V VGE = 15V RG = 0.52Ω Tj = 125°C Inductive Load C Snubber at Bus 102 EMITTER CURRENT, IE, (AMPERES) GATE RESISTANCE, RG, (Ω) 10-3 8 101 COLLECTOR CURRENT, IC, (AMPERES) 101 10-1 10-2 VCC = 600V 12 VCC = 600V VGE = 15V RG = 0.52Ω Tj = 125°C Inductive Load C Snubber at Bus GATE CHARGE, QG, (nC) ESW(on) ESW(off) 10-1 VCC = 400V 102 EMITTER CURRENT, IE, (AMPERES) VCC = 600V VGE = 15V IC = 600A Tj = 125°C Inductive Load C Snubber at Bus 10-3 16 0 103 102 100 IC = 600A 103 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 102 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 20 VCC = 600V VGE = 15V RG = 0.52Ω Tj = 25°C Inductive Load REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) REVERSE RECOVERY, Irr, trr, (ns) 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) GATE CHARGE VS. VGE Err 101 VCC = 600V VGE = 15V IC = 600A Tj = 125°C Inductive Load C Snubber at Bus 100 10-1 100 101 GATE RESISTANCE, RG, () 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.034°C/W (IGBT) Rth(j-c) = 0.051°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 4 01/10 Rev. 1