CM100DU-12H Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ U-Series Module 100 Amperes/600 Volts TC Measured Point A B E F C2E1 J 2 - Mounting Holes (6.5 Dia.) K V H E2 U C1 E2 G2 CM D G G1 E1 C Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. L M 3-M5 Nuts O P N O Q L P R L Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery (70ns) Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking G2 E2 C2E1 C1 E2 E1 G1 Outline Drawing and Circuit Diagram Dimensions A Inches 3.7 Millimeters 94.0 80.0±0.25 Dimensions Inches Millimeters M 0.47 12.0 N 0.53 13.5 Applications: £ AC Motor Control £ Motion/Servo Control £ UPS £ Welding Power Supplies £ Laser Power Supplies B 3.15±0.01 C 1.89 48.0 O 0.1 2.5 D 0.94 24.0 P 0.63 16.0 E 0.28 7.0 Q 0.98 25.0 F 0.67 17.0 R G 0.91 23.0 S 0.3 7.5 H 0.91 23.0 T 0.83 21.2 J 0.43 11.0 U 0.16 4.0 Type Current Rating Amperes VCES Volts (x 50) K 0.71 18.0 V 0.51 13.0 CM 100 12 L 0.16 4.0 1.18 +0.04/-0.02 30.0 +1.0/-0.5 Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM100DU-12H is a 600V (VCES), 100 Ampere Dual IGBTMOD™ Power Module. 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100DU-12H Dual IGBTMOD™ U-Series Module 100 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Symbol CM100DU-12H Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 100 Amperes ICM 200* Amperes IE 100 Amperes Peak Emitter Current** IEM 200* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 400 Watts Mounting Torque, M5 Main Terminal – 31 in-lb Mounting Torque, M6 Mounting – 40 in-lb – 310 Grams Viso 2500 Volts Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Symbol Test Conditions Min. Typ. Max. ICES VCE = VCES, VGE = 0V – – 1 Units mA IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts IC = 100A, VGE = 15V, Tj = 125°C – 2.6 – Volts Total Gate Charge QG VCC = 300V, IC = 100A, VGE = 15V – 200 Emitter-Collector Voltage** VEC IE = 100A, VGE = 0V – – 2.6 – nC Min. Typ. Max. Units – – 8.8 nf – – 4.8 nf – – 1.3 nf Volts **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) VCC = 300V, IC = 100A, – – 100 ns Load Rise Time tr VGE1 = VGE2 = 15V, – – 250 ns Switch Turn-off Delay Time td(off) RG = 6.3Ω, Resistive – – 200 ns Times Fall Time tf Load Switching Operation – – 300 ns Diode Reverse Recovery Time** trr IE = 100A, diE/dt = -200A/μs – – 160 ns Diode Reverse Recovery Charge** Qrr IE = 100A, diE/dt = -200A/μs – 0.24 – µC VCE = 10V, VGE = 0V **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module – – Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module – – 0.7 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.035 – °C/W Contact Thermal Resistance 2 Max. 0.31 Units °C/W Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100DU-12H Dual IGBTMOD™ U-Series Module 100 Amperes/600 Volts OUTPUT CHARACTERISTICS (TYPICAL) 200 VGE = 20V 160 5 14 13 15 12 120 11 80 10 40 9 VCE = 10V Tj = 25°C Tj = 125°C 160 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) 120 80 40 8 0 0 2 4 6 8 0 10 8 12 16 3 2 1 0 20 0 40 120 80 160 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 102 IC = 100A 4 2 IC = 40A 0 103 102 0 4 8 12 16 100 0.6 20 1.0 1.4 1.8 2.2 2.6 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 td(off) tf tr 101 COLLECTOR CURRENT, IC, (AMPERES) 102 102 trr 101 EMITTER CURRENT, IE, (AMPERES) Cies 100 Coes 10-1 Cres 100 102 101 GATE CHARGE, VGE 101 Irr 101 100 101 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 di/dt = -200A/µsec Tj = 25°C 200 VGE = 0V f = 1MHz 10-2 10-1 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) td(on) 100 100 101 GATE-EMITTER VOLTAGE, VGE, (VOLTS) VCC = 300V VGE = ±15V RG = 6.3 Ω Tj = 125°C 101 CAPACITANCE, Cies, Coes, Cres, (nF) IC = 200A 100 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) EMITTER CURRENT, IE, (AMPERES) 8 6 102 Tj = 25°C Tj = 25°C REVERSE RECOVERY TIME, trr, (ns) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 4 4 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 10 SWITCHING TIME, (ns) 0 VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 200 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 100A 16 VCC = 200V VCC = 300V 12 8 4 0 0 50 100 150 200 250 300 GATE CHARGE, QG, (nC) 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.31°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 4 100 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CM100DU-12H Dual IGBTMOD™ U-Series Module 100 Amperes/600 Volts 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.7°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3