SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION I.Umezaki A K.Kurachi R Y.konishi E I.Umezaki M.Yamamoto V Nov.-18-2008 Oct.6.2003 HIGH VOLTAGE DIODE MODULE SPECIFICATION 1. Type Number RM600HE-90S 2. Structure Flat base type (Insulated package, AlSiC base plate) 3. Application & Customer High power converters & Inverters 4. Outline See Fig. 1 5. Related Specifications Fig. 1 - Outline drawing HIGH VOLTAGE DIODE MODULE HVM-2006-A (HV-SETSU) PAGE 1 / 11 MITSUBISHI ELECTRIC CORPORATION 6. Maximum Ratings Item Symbol Conditions Ratings Unit 6.1 Repetitive peak reverse voltage VRRM Tj = 25 °C 4500 V 6.2 Non-repetitive peak reverse voltage VRSM Tj = 25 °C 4500 V 6.3 Reverse DC voltage VR(DC) Tj = 25 °C 3000 V 6.4 DC forward current IF Tc = 25 °C 600 A 6.5 Surge forward current IFSM Tj = 25 °C start, tw = 8.3 ms Half sign wave 4800 A 6.6 Surge current load integral I2t Tj = 25 °C start, tw = 8.3 ms Half sign wave 95.6 kA2s 6.7 Isolation voltage Viso Charged part to the baseplate RMS sinusoidal, 60Hz 1min. 6000 V 6.8 Junction temperature Tj — −40 ~ +150 °C 6.9 Storage temperature Tstg — −40 ~ +125 °C Top — −40 ~ +125 °C 6.10 Operating temperature 6.11 Maximum reverse recovery instantaneous power 7. 600 kW [See Fig.1, Fig.2, 12-5] Electrical Characteristics Item 7.1 VR ≤ 3000 V di/dt ≤ 2000 A/µs, Tj = 125 °C — Repetitive reverse current Symbol IRRM VRM = VRRM (Note 1) 7.2 Forward voltage VFM 7.3 Reverse recovery time trr 7.4 Reverse recovery charge Qrr 7.5 Reverse recovery energy Erec Limits Conditions IF = 600 A Unit Min. Typ. Max. Tj = 25 °C — — — — — 4.80 5 30 — Tj = 125 °C — 4.20 — — 0.90 1.8 µs — 600 — µC — 0.62 — J/P Tj = 25 °C Tj = 125 °C VR = 2250 V, IF = 600 A di/dt = −1400 A/µs Tj = 125 °C mA V [See Fig.1,Fig.2] Note 1: It doesn't include the voltage drop by Internal lead resistance. HIGH VOLTAGE DIODE MODULE HVM-2006-A (HV-SETSU) PAGE 2 / 11 MITSUBISHI ELECTRIC CORPORATION 8. Thermal Characteristics Item Symbol Limits Conditions 8.1 Thermal resistance Rth(j-c)R Junction to case 8.2 Contact thermal resistance Rth(c-f) Case to fin Conductive grease applied Unit Min. Typ. Max. — — 39.0 K/kW — 15.0 — K/kW (Note 2) Note 2: Thermal conductivity is 1W/mK with a thickness of 100µm. 9. Mechanical Characteristics Item Symbol Conditions Limits Min. Typ. Max. Unit 9.1 Mounting torque — Main terminal screw : M8 6.67 — 13.0 N·m 9.2 Mounting torque — Mounting screw : M6 2.84 — 6.0 N·m 9.3 Mass — — 0.66 — kg — 10. Shipping Inspection Report Item (note 3) Static characteristics : IRRM [7.1], VFM [7.2] Dynamic characteristics : trr [7.3], Qrr [7.4] Note 3: One shipping inspection report with the above item values is submitted when modules are delivered. The test conditions are defined in bracket. HIGH VOLTAGE DIODE MODULE HVM-2006-A (HV-SETSU) PAGE 3 / 11 MITSUBISHI ELECTRIC CORPORATION 11. Test Circuit & Definition of Switching Characteristics LS1 = 500 nH Rg LLOAD LS2 = 100 nH K C = 2 mF V CC DUT: diode CS = 200 uF A Fig. 1 – Switching test circuit Diode part: reverse recovery Qrr = – IF di/dt ∫ t6 VR trr di 0 Irr 10%IF Erec = – ∫ if dt 0 t6 if•vr dt t5 50%Irr dt 90%Irr 0 10%VR 0 t5 t6 Fig. 2 – Definitions of reverse recovery charge & energy HIGH VOLTAGE DIODE MODULE HVM-2006-A (HV-SETSU) PAGE 4 / 11 MITSUBISHI ELECTRIC CORPORATION 12. Performance curves 12-1 Forward characteristics................................................................................................... 6 12-2 Reverse recovery energy characteristics ...................................................................... 7 12-3 Reverse recovery current characteristics...................................................................... 8 12-4 Transient thermal impedance characteristics ............................................................... 9 12-5 Reverse recovery safe operating area ......................................................................... 10 HIGH VOLTAGE DIODE MODULE HVM-2006-A (HV-SETSU) PAGE 5 / 11 MITSUBISHI ELECTRIC CORPORATION 12-1 Forward characteristics 1400 1200 Forward current IF [A] 1000 800 600 Tj=125°C Tj=25°C 400 200 0 0 1 2 3 4 5 6 7 8 Forward voltage VFM [V] Forward voltage characteristics (typical) HIGH VOLTAGE DIODE MODULE HVM-2006-A (HV-SETSU) PAGE 6 / 11 MITSUBISHI ELECTRIC CORPORATION 12-2 Reverse recovery energy characteristics 1.2 Tj = 125°C, VR = 2250V Ls = 100nH, Inductive load Integration range: 10%VR ~10%IF Reverse recovery energy Erec [J/P] 1.0 0.8 0.6 0.4 0.2 0.0 0 200 400 600 800 1000 1200 1400 Forward current IF [A] Reverse recovery energy characteristics (typical) HIGH VOLTAGE DIODE MODULE HVM-2006-A (HV-SETSU) PAGE 7 / 11 MITSUBISHI ELECTRIC CORPORATION 12-3 Reverse recovery current characteristics 1200 Tj = 125°C, VR = 2250V Ls = 100nH, Inductive load Reverse recovery current Irr [A] 1000 800 600 400 200 0 0 200 400 600 800 1000 1200 1400 Forward current IF [A] Reverse recovery current characteristics (typical) HIGH VOLTAGE DIODE MODULE HVM-2006-A (HV-SETSU) PAGE 8 / 11 MITSUBISHI ELECTRIC CORPORATION 12-4 Transient thermal impedance characteristics 1.2 Single pulse Tc =Rth(j-c) 25°C = 24 K/kW Rth(j-c) = 39 K/kW Normalized transient thermal impedance 1.0 0.8 0.6 0.4 0.2 0.0 0.001 0.01 0.1 1 10 100 Time [sec.] Transient thermal impedance characteristics HIGH VOLTAGE DIODE MODULE HVM-2006-A (HV-SETSU) PAGE 9 / 11 MITSUBISHI ELECTRIC CORPORATION 12-5 Reverse recovery safe operating area 4000 Tj = 125°C, VR ≤ 1150 V di/dt ≤ 4600A/µs 3500 Reverse recovery current Irr [A] 3000 2500 2000 1500 1000 500 0 0 500 1000 1500 2000 Reverse voltage VR [V] Reverse recovery safe operating area (RRSOA) HIGH VOLTAGE DIODE MODULE HVM-2006-A (HV-SETSU) PAGE 10 / 11 MITSUBISHI ELECTRIC CORPORATION Rev. No. − Signature & date I.Umezaki Oct.6.2003 Summary of changes Original A HIGH VOLTAGE DIODE MODULE K.Kurachi Nov.-17-2008 HVM-2006-A (HV-SETSU) PAGE 11 / 11