AP2309GN

AP2309GN
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small Package Outline
D
▼ Surface Mount Device
BVDSS
-30V
RDS(ON)
75mΩ
ID
- 3.7A
S
SOT-23
Description
G
D
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, low on-resistance and
cost-effectiveness.
G
S
The SOT-23 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
- 30
V
±20
V
3
- 3.7
A
3
-3
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-12
A
[email protected]=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
90
℃/W
1
200801142
AP2309GN
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-30
-
-
V
-
-0.02
-
V/℃
VGS=-10V, ID=-3A
-
-
75
mΩ
VGS=-4.5V, ID=-2.6A
-
-
120
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-3A
-
5
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=55 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=-3A
-
5
8
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
3
-
nC
VDS=-15V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
20
-
ns
tf
Fall Time
RD=15Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
412
660
pF
Coss
Output Capacitance
VDS=-25V
-
91
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
62
-
pF
Min.
Typ.
IS=-1.2A, VGS=0V
-
-
-1.2
V
IS=-3A, VGS=0V,
-
20
-
ns
dI/dt=100A/µs
-
15
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
AP2309GN
45
45
-10V
40
T A =25 o C
-7.0V
30
25
-5.0V
-4.5V
20
15
10
-7.0V
30
25
-5.0V
-4.5V
20
15
10
V G = - 3 .0V
5
V G = - 3 .0V
5
0
0
0
2
4
6
8
10
0
2
-V DS , Drain-to-Source Voltage (V)
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
105
1.6
I D =3A
V G =10V
I D =-2.6A
95
1.4
o
Normalized RDS(ON)
T A =25 C
RDS(ON) (mΩ )
-10V
35
-ID , Drain Current (A)
-ID , Drain Current (A)
35
T A = 150 o C
40
85
75
1.2
1.0
0.8
65
0.6
55
3
5
7
9
-50
11
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.3
Normalized -VGS(th) (V)
3
-IS(A)
2
T j =150 o C
T j =25 o C
1
0
1.1
0.9
0.7
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2309GN
f=1.0MHz
1000
ID= -3A
V DS = -24V
10
C iss
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
100
C oss
C rss
4
2
0
10
0
2
4
6
8
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
-ID (A)
10
1ms
1
10ms
0.1
o
T A =25 C
Single Pulse
100ms
1s
DC
0.2
0.1
0.1
0.05
PDM
t
0.01
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja = 270℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
-V DS , Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Circuit
Charge
Q
Fig 12. Gate Charge Circuit
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SOT-23
D
Millimeters
D1
E1
E
e
SYMBOLS
MIN
NOM MAX
A
1.00
1.15
A1
0.00
--
0.10
A2
0.10
0.15
0.25
D1
0.30
0.40
0.50
e
1.70
2.00
2.30
D
2.70
2.90
3.10
E
2.40
2.65
3.00
E1
1.40
1.50
1.60
1.30
1.All Dimension Are In Millimeters.
A
2.Dimension Does Not Include Mold Protrusions.
A2
A1
Part Marking Information & Packing : SOT-23
Part Number : NB
NBXX
Date Code : XX
5