AP9T16GH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Capable of 2.5V gate drive
▼ Single Drive Requirement
BVDSS
20V
RDS(ON)
25mΩ
ID
G
25A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G D
S
TO-252(H)
G
D
S
TO-251(J)
Rating
Units
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
+16
V
ID@TC=25℃
Continuous Drain Current, V GS @ 4.5V
25
A
ID@TC=100℃
Continuous Drain Current, V GS @ 4.5V
16
A
90
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
25
W
Linear Derating Factor
0.2
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
5
℃/W
110
℃/W
1
200808154
AP9T16GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
20
-
-
V
-
0.01
-
V/℃
VGS=4.5V, ID=6A
-
-
25
mΩ
VGS=2.5V, ID=5.2A
-
-
40
mΩ
0.5
-
1.5
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=18A
-
19
-
S
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=16V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+16V
-
-
+100
nA
ID=18A
-
10
16
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5
-
nC
2
td(on)
Turn-on Delay Time
VDS=10V
-
10
-
ns
tr
Rise Time
ID=18A
-
98
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
18
-
ns
tf
Fall Time
RD=0.56Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
870
1390
pF
Coss
Output Capacitance
VDS=20V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
120
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.38
-
Ω
Min.
Typ.
IS=18A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=18A, VGS=0V,
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9T16GH/J
100
80
T C =25 o C
ID , Drain Current (A)
ID , Drain Current (A)
T C = 150 o C
5.0V
4.5V
80
60
3.5V
40
2.5V
60
5.0V
4.5V
40
3.5V
20
2.5V
20
V G =1.5V
V G =1.5V
0
0
0
1
2
3
4
5
6
0
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
42
I D = 5.2 A
I D =6A
V G =4.5V
T C =25 o C
37
Normalized RDS(ON)
1.4
RDS(ON) (mΩ )
1
32
27
22
1.2
1.0
0.8
17
12
0.6
0
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
2.0
Normalized VGS(th) (V)
8
IS(A)
6
T j =150 o C
T j =25 o C
4
1.5
1.0
0.5
2
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9T16GH/J
14
f=1.0MHz
10000
V DS =10V
V DS =12V
V DS =16V
10
C (pF)
VGS , Gate to Source Voltage (V)
I D =18A
12
8
1000
C iss
6
4
2
C oss
C rss
100
0
0
5
10
15
20
25
1
30
5
Fig 7. Gate Charge Characteristics
13
17
21
25
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
100us
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
1ms
10
10ms
100ms
DC
T c =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
D
D1
E2
MIN
NOM
MAX
A2
1.80
2.30
2.80
A3
0.40
0.50
0.60
B1
0.40
0.70
1.00
D
6.00
6.50
7.00
D1
4.80
5.35
5.90
E3
3.50
4.00
4.50
E3
E1
B1
F1
e
Millimeters
SYMBOLS
F
2.20
2.63
3.05
F1
0.5
0.85
1.20
E1
5.10
5.70
6.30
E2
0.50
1.10
1.80
e
--
2.30
--
C
0.35
0.50
0.65
F
e
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
R : 0.127~0.381
A2
A3
(0.1mm
C
Part Marking Information & Packing : TO-252
Part Number
Package Code
meet Rohs requirement
9T16GH
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-251
D
Millimeters
A
SYMBOLS
c1
D1
E1
E
A1
B2
F
B1
MIN
NOM
MAX
A
2.20
2.30
2.40
A1
0.90
1.20
1.50
B1
0.50
0.69
0.88
B2
0.60
0.87
1.14
c
c1
0.40
0.50
0.60
0.40
0.50
0.60
D
6.40
6.60
6.80
D1
5.20
5.35
5.50
E
6.70
7.00
7.30
E1
5.40
5.80
6.20
e
----
2.30
----
F
5.88
6.84
7.80
1.All Dimensions Are in Millimeters.
c
e
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-251
Part Number
9T16GJ
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
LOGO
Date Code (YWWSSS)
Y ：Last Digit Of The Year
WW ：Week
SSS ：Sequence
6