AP4407GM-HF - Advanced Power Electronics Corp

AP4407GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
D
▼ Low On-resistance
D
D
▼ Fast Switching
G
▼ RoHS Compliant & Halogen-Free
SO-8
S
BVDSS
-30V
RDS(ON)
14mΩ
ID
-10.7A
S
S
D
Description
AP4407 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
G
S
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
Absolute Maximum [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
-30
V
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
+25
V
[email protected]=25℃
Drain Current, VGS @ 10V3
-10.7
A
[email protected]=70℃
3
Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
[email protected]=25℃
-8.6
A
-50
A
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
1
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
50
℃/W
1
201501083
AP4407GM-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
VGS=0V, ID=-250uA
2
Static Drain-Source On-Resistance
Min. Typ. Max. Units
-30
-
-
V
-
-0.015
-
V/℃
VGS=-10V, ID=-10A
-
-
14
mΩ
VGS=-4.5V, ID=-5A
-
-
25
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-10A
-
13
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V
-
-
-25
uA
o
IGSS
Gate-Source Leakage
VGS= +25V
-
-
+100
nA
Qg
Total Gate Charge
ID=-10A
-
28
45
nC
Qgs
Gate-Source Charge
VDS=-24V
-
5.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
19.8
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
12
-
ns
tr
Rise Time
ID=-1A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=6.8Ω,VGS=-10V
-
97
-
ns
tf
Fall Time
RD=15Ω
-
72
-
ns
Ciss
Input Capacitance
VGS=0V
-
1960 3200
pF
Coss
Output Capacitance
VDS=-25V
-
590
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
465
-
pF
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Min. Typ. Max. Units
VSD
Forward On Voltage
IS=-2.0A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-10A, VGS=0V,
-
36
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
34
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4407GM-HF
40
40
-ID , Drain Current (A)
-ID , Drain Current (A)
T A =25 o C
30
T A =150 o C
-10V
-5.0V
-4.5V
-4.0V
20
V G =-3.0V
10
-10V
-5.0V
-4.5V
-4.0V
30
20
V G =-3.0V
10
0
0
0
1
2
3
0
-V DS , Drain-to-Source Voltage (V)
1
1
2
2
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
25
1.80
I D =-10A
I D =-10A
V GS = -10V
1.60
Normalized RDS(ON)
RDS(ON) (mΩ )
T A =25 o C
20
15
1.40
1.20
1.00
0.80
10
0.60
3
5
7
9
11
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100.00
2.6
2.2
10.00
T j =25 o C
-VGS(th) (V)
-IS(A)
T j =150 o C
1.00
1.8
1.4
0.10
1
0.01
0.6
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4407GM-HF
I D = -10A
V DS = -24V
12
10
Ciss
8
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MH
z
10000
14
6
1000
Coss
Crss
4
2
0
100
0
2
4
6
8
10
12
14
16
18
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (R thja)
100
100us
10
1ms
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
10ms
1
100ms
1s
10s
DC
0.1
T A =25 o C
Single Pulse
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 125℃
℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP4407GM-HF
MARKING INFORMATION
Part Number
4407GM
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5