AP9970AGP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ RoHS Compliant & Halogen-Free
G
BVDSS
60V
RDS(ON)
3mΩ
ID
235A
S
Description
AP9970A series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal
resistance and low package cost contribute to the worldwide
popular package.
G
D
TO-220(P)
S
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol
Parameter
.
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current (Chip)
235
A
120
A
120
A
480
A
277.8
W
ID@TC=25℃
ID@TC=100℃
Drain Current, VGS @ 10V
3
Drain Current, VGS @ 10V
3
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
0.45
℃/W
62
℃/W
1
201501134
AP9970AGP-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
60
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=60A
-
-
3
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=60A
-
110
-
S
IDSS
Drain-Source Leakage Current
VDS=48V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=40A
-
170
270
nC
Qgs
Gate-Source Charge
VDS=48V
-
25
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
95
-
nC
td(on)
Turn-on Delay Time
VDS=30V
-
30
-
ns
tr
Rise Time
ID=40A
-
130
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
70
-
ns
tf
Fall Time
VGS=10V
-
120
-
ns
Ciss
Input Capacitance
VGS=0V
-
6800 10880
pF
Coss
Output Capacitance
VDS=25V
-
1150
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
850
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.1
4.2
Ω
Min.
Typ.
IS=40A, VGS=0V
-
-
1.3
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V
-
70
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
150
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 120A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9970AGP-HF
320
200
T C = 150 C
160
ID , Drain Current (A)
ID , Drain Current (A)
240
10V
8.0V
7.0V
6.0V
o
10V
8.0V
7.0V
6.0V
o
T C = 25 C
160
V GS =5.0V
120
V GS =5.0V
80
80
40
0
0
0
8
16
24
32
0
4
8
12
16
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
2.4
I D =1mA
I D =60A
V G =10V
1.4
1.2
1
.
0.8
Normalized RDS(ON)
Normalized BVDSS
2.0
1.6
1.2
0.8
0.6
0.4
0.4
-50
0
50
100
150
-50
0
o
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.6
40
I D =1mA
1.2
o
Normalized VGS(th)
IS(A)
30
o
T j =150 C
T j =25 C
20
0.8
0.4
10
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9970AGP-HF
12
f=1.0MHz
10000
10
8000
V DS =30V
V DS =36V
V DS =60V
8
C iss
6000
C (pF)
VGS , Gate to Source Voltage (V)
I D = 40 A
6
4000
4
2000
C oss
C rss
2
0
0
0
40
80
120
160
1
200
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Operation in this
area limited by
RDS(ON)
100us
100
1ms
10ms
10
100ms
DC
o
T c =25 C
Single Pulse
1
.
Normalized Thermal Response (R thjc)
1000
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP9970AGP-HF
MARKING INFORMATION
9970AGP
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5