AP9926GM-HF (MN0330-WS05) - Advanced Power Electronics Corp

AP9926GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low Gate Charge
D2
D2
▼ Capable of 2.5V Gate Drive
D1
D1
▼ Surface Mount Package
BVDSS
20V
RDS(ON)
30mΩ
ID
G2
6A
S2
▼ RoHS Compliant & Halogen-Free
SO-8
S1
G1
Description
D2
D1
AP9926 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide range
of power applications.
G2
G1
S2
S1
The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
Absolute Maximum [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Drain Current, VGS @ 4.5V
3
Drain Current, VGS @ 4.5V
3
1
Rating
Units
20
V
+12
V
6
A
4.8
A
26
A
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
201501125
AP9926GM-HF
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
20
-
-
V
VGS=4.5V, ID=6A
-
-
30
mΩ
VGS=2.5V, ID=4A
-
-
45
mΩ
VGS=0V, ID=250uA
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
-
-
1.2
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
6
-
S
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
-
25
uA
Drain-Source Leakage Current (Tj=70 C) VDS=20V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
-
-
+100
nA
o
IGSS
VGS=+12V, VDS=0V
2
ID=6A
-
11
17.6
nC
Gate-Source Charge
VDS=16V
-
1.1
-
nC
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.1
-
nC
VDS=10V
-
4.2
-
ns
Qg
Total Gate Charge
Qgs
Qgd
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
23
-
ns
tf
Fall Time
RD=10Ω
-
3.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
570
910
pF
Coss
Output Capacitance
VDS=20V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
85
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
2.4
Ω
Min.
Typ.
Max. Units
IS=1.7A, VGS=0V
-
-
1.2
V
IS=6A, VGS=0V,
-
21
-
ns
dI/dt=100A/µs
-
14
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9926GM-HF
30
30
T A = 150 C
V G =2.0V
20
15
10
5
V G = 2.0 V
20
15
10
5
0
0
0
1
2
3
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
36
I D =6A
V G = 4.5V
ID=4A
T A =25 o C
1.4
Normalized RDS(ON)
32
RDS(ON) (mΩ )
5.0V
4.5 V
3.5 V
2.5 V
25
ID , Drain Current (A)
25
ID , Drain Current (A)
o
5.0V
4.5 V
3.5 V
2.5 V
T A =25 o C
28
24
1.2
1.0
0.8
20
0.6
16
0
2
4
6
8
-50
10
100
150
Fig 4. Normalized On-Resistance
v.s. Temperature
1.4
8
1.2
Normalized VGS(th)
10
6
IS(A)
50
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
o
o
T j =150 C
0
o
V GS , Gate-to-Source Voltage (V)
T j =25 C
4
2
1.0
0.8
0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9926GM-HF
12
f=1.0MHz
1000
ID=6A
C oss
V DS = 10 V
V DS = 12 V
V DS =1 6 V
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C iss
100
C rss
4
2
10
0
0
10
20
1
30
5
Fig 7. Gate Charge Characteristics
13
17
21
25
Fig 8. Typical Capacitance Characteristics
100
Operation in this
area limited by
RDS(ON)
Normalized Thermal Response (R thja)
1
10
100us
1ms
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
1
10ms
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.01
0.001
0.01
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
ID , Drain Current (A)
V DS =5V
T j =25 o C
T j =150 o C
QG
20
4.5V
QGS
QGD
10
Charge
Q
0
0
1
2
3
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP9926GM-HF
MARKING INFORMATION
Part Number
9926GM
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5