AP2311GN - Advanced Power Electronics Corp

AP2311GN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Small Package Outline
BVDSS
-60V
RDS(ON)
250mΩ
ID
▼ Surface Mount Device
- 1.8A
S
▼ RoHS Compliant & Halogen-Free
SOT-23
G
Description
D
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, low on-resistance and costeffectiveness.
The SOT-23 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
G
S
o
Absolute Maximum [email protected]=25 C(unless otherwise specified)
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
.
Rating
Units
- 60
V
+20
V
Continuous Drain Current
3
- 1.8
A
Continuous Drain Current
3
- 1.4
A
-10
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
90
℃/W
1
201411054
AP2311GN-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-60
-
-
V
-
-0.04
-
V/℃
VGS=-10V, ID=-1.8A
-
200
250
mΩ
VGS=-4.5V, ID=-1.4A
-
240
300
mΩ
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-1A
-
2
-
S
IDSS
Drain-Source Leakage Current
VDS=-60V, VGS=0V
-
-
-10
uA
Drain-Source Leakage Current (T j=70 C) VDS=-48V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=+20V
-
-
+100
nA
ID=-1A
-
6
10
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-48V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
3
-
nC
2
td(on)
Turn-on Delay Time
VDS=-30V
-
8
-
ns
tr
Rise Time
ID=-1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
22
-
ns
tf
Fall Time
RD=30Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
510
810
pF
Coss
Output Capacitance
VDS=-25V
-
50
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6.4
9.6
Ω
Min.
Typ.
IS=-1.2A, VGS=0V
-
-
-1.2
V
.
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-1A, VGS=0V,
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
38
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 270 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2311GN-HF
10
10
-10V
-7.0V
-5.0V
-4.5V
-ID , Drain Current (A)
T A =25 C
7.5
V G = -3.0V
5
8
5
V G = - 3 .0V
3
2.5
0
0
0
1
2
3
4
5
0
6
-V DS , Drain-to-Source Voltage (V)
1
2
3
4
5
6
7
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
250
I D =-1.4A
I D =-1.8A
V G =-10V
T A =25 o C
240
230
.
220
Normalized RDS(ON)
1.6
RDS(ON) (mΩ )
-10V
-7.0V
-5.0V
-4.5V
T A = 150 o C
-ID , Drain Current (A)
o
1.2
0.8
210
0.4
200
2
4
6
8
-50
10
Fig 3. On-Resistance v.s. Gate Voltage
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.5
1.5
Normalized VGS(th)
1.3
o
o
T j =25 C
T j =150 C
-IS(A)
0
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
1.0
0.5
1.0
0.8
0.0
0.5
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
3
AP2311GN-HF
f=1.0MHz
1000
I D = -1 A
V DS = - 48 V
10
C iss
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
100
C oss
4
C rss
2
0
10
0
2
4
6
8
10
12
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
-ID (A)
100us
1
.
1ms
0.1
10ms
100ms
1s
DC
0.01
T A =25 o C
Single Pulse
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.01
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja = 270℃/W
0.001
0.001
0.1
1
10
100
1000
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
10
VG
V DS =-5V
-ID , Drain Current (A)
8
T j =25 o C
QG
T j =150 o C
-4.5V
6
QGS
QGD
4
2
Charge
Q
0
0
1
2
3
4
5
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Circuit
4
AP2311GN-HF
MARKING INFORMATION
Part Number : NG
NGSS
Date Code : SS
SS:2004,2008,2012…
SS:2003,2007,2011…
SS:2002,2006,2010…
SS:2001,2005,2009…
.
5