AP86T02GH,J-HF (MN0322) - Advanced Power Electronics Corp

AP86T02GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Low On-resistance
▼ Fast Switching Characteristic
25V
RDS(ON)
6mΩ
ID
G
▼ RoHS Compliant
BVDSS
75A
S
Description
AP86T02 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance. The
through-hole version (AP86T02GJ) are available for low-profile
applications.
G
G
D
D S
S
TO-252(H)
TO-251(J)
Absolute Maximum [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
Drain Current, VGS @ 10V
[email protected]=100℃
Drain Current, VGS @ 10V
3
1
Rating
Units
25
V
+20
V
75
A
62
A
300
A
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
75
W
Linear Derating Factor
0.5
W/℃
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
5
Value
Units
2
℃/W
62.5
℃/W
110
℃/W
1
20150127A
AP86T02GH/J-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
25
-
-
V
VGS=10V, ID=45A
-
-
6
mΩ
VGS=4.5V, ID=30A
-
-
10
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
42
-
S
IDSS
Drain-Source Leakage Current
VDS=25V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS=+20V
-
-
+100
nA
ID=30A
-
23
37
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
5
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
14
nC
2
td(on)
Turn-on Delay Time
VDS=10V
-
11
-
ns
tr
Rise Time
ID=30A
-
105
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
32
-
ns
tf
Fall Time
VGS=10V
-
8
-
ns
Ciss
Input Capacitance
VGS=0V
-
1830 2930
pF
Coss
Output Capacitance
VDS=25V
-
490
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
360
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
1.6
Ω
Min.
Typ.
IS=45A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
Test Conditions
2
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=20A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
Min.
Typ.
-
-
Drain-Source Avalanche Ratings
Symbol
EAS
Parameter
Drain-Source Avalanche Energy
Test Conditions
4
ID=24A, VDD=20V, L=100uH
Max. Units
29
mJ
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 75A .
4.Single Pulse Test.
2
5.Surface mounted on 1 in copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP86T02GH/J-HF
200
120
10V
7.0V
5.0V
4.5V
ID , Drain Current (A)
150
100
V G =3.0V
50
90
60
V G = 3 .0V
30
0
0
0
1
2
3
4
5
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
16
1.8
I D =30A
T c =25 ℃
I D =45A
V G =10V
Normalized RDS(ON)
RDS(ON) (mΩ)
10V
7.0V
5.0V
4.5V
T C = 175 o C
ID , Drain Current (A)
o
T C =25 C
12
8
4
1.4
1.0
0.6
2
4
6
8
25
10
50
75
100
125
150
175
o
T j , Junction Temperature ( C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
1.2
T j =25 o C
Is (A)
Normalized VGS(th)
T j =175 o C
20
10
0.8
0.4
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
25
50
75
100
125
150
175
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP86T02GH/J-HF
12
f=1.0MHz
10000
8
V DS =10V
V DS =15V
V DS =20V
6
C (pF)
VGS , Gate to Source Voltage (V)
I D =30A
10
C iss
1000
C oss
C rss
4
2
100
0
0
10
20
30
40
1
50
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
ID (A)
100
1ms
10
10ms
100ms
1s
DC
o
T C =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
120
40
2.8V 3V
30
80
T j =25 o C
RDS(ON) (mΩ)
ID , Drain Current (A)
V DS =5V
T j =175 o C
3.2V
3.5V
3.8V
20
40
4.2V
4.5V
10
10V
0
0
0
2
4
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
0
20
40
60
80
100
I D (A)
Fig 12. Drain-Source On Resistance
4
AP86T02GH/J-HF
MARKING INFORMATION
TO-251
86T02GJ
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
TO-252
86T02GH
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5