AP2318GEN
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V Gate Drive
D
▼ Small Outline Package
▼ Surface Mount Device
BVDSS
30V
RDS(ON)
1.5Ω
ID
500mA
S
▼ RoHS Compliant & Halogen-Free
SOT-23S
G
D
Description
AP2318 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The SOT-23S package is widely preferred for commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC
converters.
G
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
.
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+16
V
0.5
A
0.4
A
2
A
0.7
W
ID@TA=25℃
ID@TA=70℃
3
Drain Current , VGS @ 4V
3
Drain Current , VGS @ 4V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
180
℃/W
1
201411175AP
AP2318GEN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4V, ID=500mA
-
-
1.5
Ω
VGS=2.5V, ID=200mA
-
-
2.5
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.4
-
1.3
V
gfs
Forward Transconductance
VDS=4V, ID=500mA
-
725
-
mS
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS=+16V, VDS=0V
-
-
+60
uA
Qg
Total Gate Charge2
ID=1A
-
1.1
1.8
nC
Qgs
Gate-Source Charge
VDS=25V
-
0.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
0.4
-
nC
VDS=15V
-
17
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
44
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
45
-
ns
tf
Fall Time
VGS=5V
-
55
-
ns
Ciss
Input Capacitance
VGS=0V
-
30
48
pF
Coss
Output Capacitance
V =25V
-
12
-
pF
Crss
Reverse Transfer Capacitance
. DS
f=1.0MHz
-
11
-
pF
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=0.5A, VGS=0V
Max. Units
1.3
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 400℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2318GEN
2.5
2.5
5.0V
4.5V
4.0 V
ID , Drain Current (A)
o
5.0V
4.5V
TA=150 C
2.0
ID , Drain Current (A)
o
T A = 25 C
2.0
1.5
1.0
2.5V
0.5
4.0 V
1.5
1.0
2.5V
0.5
V G = 1 .5V
V G = 1 .5V
0.0
0.0
0.0
2.0
4.0
6.0
0.0
2.0
V DS , Drain-to-Source Voltage (V)
4.0
6.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3300
2.0
I D =200mA
I D =500mA
V G =4V
RDS(ON) (mΩ)
2300
.
Normalized RDS(ON)
T A =25 o C
1.6
1.2
1300
0.8
0.4
300
1
2
3
4
5
-50
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
1.0
0.8
Normalized VGS(th)
IS(A)
1.5
0.6
T j =150 o C
T j =25 o C
0.4
1
0.5
0.2
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2318GEN
f=1.0MHz
10
100
8
V DS =15V
V DS =20V
V DS =25V
6
C (pF)
VGS , Gate to Source Voltage (V)
I D =1A
C iss
4
2
C oss
C rss
10
0
0.0
0.5
1.0
1.5
2.0
1
2.5
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Operation in this area
limited by RDS(ON)
100us
ID (A)
1
.
1ms
10ms
0.1
100ms
T A =25 o C
Single Pulse
1s
DC
Normalized Thermal Response (Rthja)
10
Duty factor=0.5
0.2
0.1
0.1
PDM
t
0.05
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja = 400℃/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
2.0
VG
ID , Drain Current (A)
V DS =5V
1.5
QG
4.5V
T j =25 o C
T j =150 o C
QGS
1.0
QGD
0.5
Charge
Q
0.0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Circuit
4
AP2318BEN
MARKING INFORMATION
Part Number : NM
NMSS
Date Code : SS
SS:2004,2008,2012…
SS:2003,2007,2011…
SS:2002,2006,2010…
SS:2001,2005,2009…
.
5