AP18T10GP-HF - Advanced Power Electronics Corp

AP18T10GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
▼ Fast Switching Characteristic
100V
RDS(ON)
160mΩ
ID
G
▼ Halogen Free & RoHS Compliant Product
BVDSS
9A
S
Description
AP18T10 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220 package is widely preferred for all commercial-industrial
through hole applications.
The low thermal resistance and low package cost contribute to the
worldwide popular package.
Absolute Maximum Ratings
Symbol
G
D
TO-220(P)
S
.
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Drain Current, VGS @ 10V
9
A
[email protected]=100℃
Drain Current, VGS @ 10V
5.6
A
30
A
Parameter
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
28
W
[email protected]=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
4.5
℃/W
62
℃/W
1
201406171
AP18T10GP-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
100
-
-
V
VGS=10V, ID=5A
-
-
160
mΩ
VGS=0V, ID=250uA
2
Max. Units
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
5.6
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=5A
-
10
16
nC
Qgs
Gate-Source Charge
VDS=80V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
4.5
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
6.5
-
ns
tr
Rise Time
ID=5A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
13
-
ns
tf
Fall Time
VGS=10V
-
3.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
425
680
pF
Coss
Output Capacitance
VDS=25V
-
55
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
33
-
pF
Min.
Typ.
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=5A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=5A, VGS=0V
-
53
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
130
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP18T10GP-HF
20
20
7 .0 V
10 V
9.0 V
8.0V
7.0V
16
ID , Drain Current (A)
16
ID , Drain Current (A)
T C = 150 o C
10 V
T C = 25 o C
12
6.0 V
8
12
8
V G = 5.0 V
5.0 V
4
4
VG=4.5V
0
0
0
2
4
6
0
8
4
8
12
16
20
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
280
2.4
I D =5A
I D =5A
V G =10V
T C =25 o C
2.0
200
.
Normalized RDS(ON)
RDS(ON) (mΩ)
240
1.6
1.2
160
0.8
120
0.4
4
5
6
7
8
9
10
-50
0
50
100
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3.0
10
8
6
T j =150 o C
VGS(th) (V)
IS(A)
2.6
T j =25 o C
2.2
4
1.8
2
0
1.4
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP18T10GP-HF
f=1.0MHz
1000
12
ID=5A
C iss
8
C (pF)
VGS , Gate to Source Voltage (V)
10
V DS = 80 V
6
100
C oss
4
C rss
2
10
0
0
2
4
6
8
10
1
12
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Operation in this
area limited by
RDS(ON)
10
100us
.
1ms
1
10ms
100ms
DC
o
T C =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
100
ID (A)
9
V DS ,Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP18T10GP-HF
MARKING INFORMATION
18T10GP
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
.
5