1/4 S t r u c t u r e Product name Silicon monolithic integrated circuit M o d e l ＢＤ４２２０ＡＭＵＶ Strobe capacitor charging control IC N o . 1. 2. 3. 4. 5. 6. 7. 8. F e a t u r e s ○ Built-in power transistor(50V DMOS) Adjustable transformer primary-side peak current to linear current with the ADJ pin Charging control switching with the START pin Includes high precision full charge voltage detection circuit and output pin Various built-in protective circuits (TSD, UVLO) Built-in protective circuits (SDP) Built-in IGBT driver(VDD supply for IGBT driver) Employs small package: VQFN016V3030 (3.0 mm×3.0 mm×1.0 mm) Absolute Maximum Ratings（Ta＝25℃） Parameter VCC supply voltage VDD supply voltage SW pin VC pin (DC characteristic) Input pin voltage (START, ADJ, IGBT_IN, IGBT_EN) Operating temperature range Storage temperature range Junction temperature Power dissipation ○ Symbol VCC VDD VSW VCDC VI Topr Tstg Tjmax Pd Rating -0.3～7 -0.3～7 50 -15～50 -0.3～7 -35～+85 -55～+150 150 1770 *1 Unit V V V V V Unit °C °C °C mW Operating Conditions（Ta=25℃） Parameter Symbol Rating VCC supply voltage range VCC 2.5～5.5 V VDD supply voltage range VDD 2.5～5.5 V Input pin voltage (START, ADJ, IGBT_IN, IGBT_EN) VI 0～VCC V FULL pin input current range VFULL 0～5.5 V *1: Reduced by 14.16 mW/°C at Ta=25°C or more (When mounted on a 74.2 mm×74.2 mm×1.6 mm glass epoxy, 4-layer board: Surface radiating copper foil of 6.28mm2, copper foil laminated in each layer) ○ Outside marking and dimension (UNIT:mm) B 4 2 2 0 A LOT No. Notes on this document Fig.1 Outside marking and dimension The Japanese version of this document is the formal specifications. The translated version of the document should be used for reference. If there is any difference between the formal specifications and the translated version, the formal specifications shall take priority. REV. A 2/4 ○ Electrical Characteristics (Ta=25℃,VCC=START=VDD=3.3V, VBAT=3.6V,ADJ=1.0V,unless otherwise specified.) Parameter Symbol Target value Unit Min. Standard Max. IVCC ISTB IVDD IVDDSTB － － 20 － 1 － 40 － 2.5 1 80 1 mA μA μA μA VSTH VSTL ISTART TSTART 2.0 － 12 6 － － 24 12.5 － 0.6 36 25 V V μA μs ISWL IPEAK1 IPEAK2 IPEAK3 VSAT － 0.7 1.0 1.95 － － 0.8 1.1 2.05 0.20 1 0.9 1.2 2.15 0.40 μA A A A V IADJ TONMAX TOFFMAX － 25 12 2.5 50 25 5 100 50 μA μs μs IVC VFULLTH VOFFL RFULLL IFULLH 1 29.7 -1.3 50 － 2 30 -0.5 110 － 4 30.3 -0.2 300 1 mA V V Ω μA UVLO hysteresis width VUVLOTH VUVLOHYS 1.9 180 2.05 230 2.2 280 V mV UVLO VDD detection voltage VUVLODTH 1.9 2.05 2.2 V UVLO VDD hysteresis width 【IGBT driver block】 VUVLODHYS 180 230 280 mV Ioso 90 140 200 mA 【Overall device】 VCC current consumption VCC Circuit current during standby operation VDD current consumption VDD Circuit current during standby operation 【Standby control START pin】 START pin high voltage START pin low voltage START pin sink current Unresponsive time when START shorted 【Transformer primary-side driver block】 SW pin leak current SW pin peak current 1 SW pin peak current 2 SW pin peak current 3 SW saturation voltage 【Charging characteristics adjustment block】 ADJ sink current Maximum ON time Maximum OFF time 【Transformer secondary-side detection block】 VC pin sink current Full charge detection voltage OFF detection voltage FULL pin ON resistance FULL pin leak current 【Protective circuit block】 UVLO detection voltage High-level output short circuit current Low-level output short circuit current Iosi 30 60 90 mA IGBT_IN high-level input voltage range1 VIGBTH1 2.0 － － V IGBT_IN high-level input voltage range2 VIGBTH2 1.4 － － V IGBT_IN low-level input voltage range VIGBTL IIGBT_IN VIGBTENH VIGBTENL IIGBT_EN － 12 2.0 － 4.5 － 24 － － 6.5 0.6 36 － 0.6 10 V μA V V μA IGBT_IN sink current IGBT_EN high-level input voltage range IGBT_EN low-level input voltage range IGBT_EN sink current Condition At Output OFF START=0V IGBT_EN=3.3V,IGBT_IN=0V IGBT_EN=0.0V,IGBT_IN=0V START=3.3V SW=50V ADJ=0V ADJ=1V ADJ=3V ISW=0.5A VC=30V FULL=0.5V FULL=3.3V VCC detection VDD detection IGBT_IN=3.3V, IGBT_EN=3.3V IGBT_IN=3.3V, IGBT_EN=3.3V IGBT_IN=3.3V, IGBT_EN=3.3V START=0V,IGBT_OUT_P=0V IGBT_IN=0V, IGBT_EN=3.3V START=0V,IGBT_OUT_N=3.3V IGBT_EN=3.3V, START=0V VDD=3.0～3.6V, Ta=-25～85 , IGBT_EN=3.3V IGBT_EN=3.3V, START=0V IGBT_IN=3.3V, START=0V IGBT_IN=3.3V, START=0V IGBT_EN=3.3V, IGBT_IN=3.3V ○ PIN No. Pin No. Pin Name Function 1 2 3 4 5 6 7 8～10 11,12 13 14 15 16 VDD VCC GND ADJ FULL START VC SW PGND IGBT_IN IGBT_EN IGBT_OUT_N IGBT_OUT_P VDD supply pin VCC supply pin Ground pin primary-side current control pin FULL charge detection flag pin Standby pin Secondary–side voltage detection pin Switching pin Power GND pin Input terminal of trigger signal for starting output of IGBT driver Input terminal of control enable signal of IGBT driver IGBT driver output N pin IGBT driver output P pin ◎This is not designed for radiation resistance. REV. A 16 15 14 13 1 12 2 11 3 10 4 9 5 6 7 8 Fig.3 TOP VIEW 3/4 ○ Blosk Diagrum ○ UVLO、TSD、SDP VCC 2 STB START VREF SW SW SW 8 9 10 VCC UVLO UVLO Operation stop due to UVLO detection Operation restart due to UVLO release TSD TSD Hysterisis OS 6 START UVLO detection voltage S Q VCC SDP STB UVLO TSD OFF time detection MAXON VC ＋ MAX OFF TIME STB FULL R V（START） DRV SQ R SDP SDP t LOGIC PGND t MAX_ON MAX_ON 11 + ADJ 4 12 5 FULL Q S R OS AntiRinging Filter + - TSDP PGND V（cap） VC Voltage at completion of charge IGBT_OUT_P 1 16 UVLO_VDD IGBT_EN PGND t 7 VDD IGBT_IN Operation stop due to increase of Operation restart due to decrease of chip temperature chip temperature VC 1/A FULL V（VC） t I（ＶＢＡＴ） 13 15 14 IGBT_OUT_N GND GND t 3 A *STB : Standby signal *OS : One shot pulse Fig.3 Block diagram BC D E F G H I Fig.4 Timing Chart: Under Protective Circuit Operation ◆UVLO If the VCC voltage is reduced to the UVLO detection voltage specified in the electrical characteristics or less, the UVLO C and ○ E in Fig.4.) After that, when the protective circuit is activated and the charging operation temporarily stops. (See Time ○ D and ○ F VDD voltage becomes the UVLO release voltage or more, the charging operation automatically restarts. (See Time ○ in Fig.4.) ◆VDD UVLO If the VDD voltage becomes the VDD UVLO detection voltage or less, the IGBT_OUT voltage is forced to be set to "L". ◆Termal Shut Down (TSD) It protects the IC against thermal runaway due to excessive temperature rise (Tj>175°C [TYP]). After detection, the charging G in Fig.4.), and when the chip temperature decreases, (Tj<150°C [TYP]), it operation temporarily stops (See time ○ H automatically restarts. (See Time ○ in Fig.4.) ◆VC pin short detection (SDP) If the VC pin becomes the GND level due to any failure and the PowerMOS repeats switching 216(=65536) times which is the SDP count number (TSDP) at the maximum OFF time, it is judged as an error and the charging operation is forced to be stopped. (See B in Fig.4.) If the START pin is changed from "L" to "H" and the UVLO detection is released, it restarts. Time ○ REV. A 4/4 ○ Precautions for Use 1. Absolute Maximum Rating Although we pay due attention to the quality control of these products, the possibility of deterioration or destruction may exist when impressed voltage, operating temperature range, etc., exceed the absolute maximum rating. In addition, it is impossible to assume a destructive situation, such as short circuit mode, open circuit mode, etc. If a special mode exceeding the absolute maximum rating is assumed, please review to provide physical safety means such as fuse, etc. 2. GND Potential Maintain the PGND pin potential at the minimum level under the operating conditions. Furthermore, maintain the pin except the VC pin at a voltage higher than the PGND pin voltage including an actual transient phenomenon. The SW pin sometimes is charged by a negative voltage depending on the characteristics of the external transformer. If any change in or damage of electrical characteristics is suspected due to the SW pin being charged by a negative voltage, it is recommended that a schottky diode should be connected between the SW pin and the PGND pin. 3. Thermal Design Work out the thermal design with sufficient margin taking power dissipation (Pd) at the actual operation condition into account. 4. Protective circuits The threat of destruction may exist , if Pd is over caused by over current or circuit pin . Be careful to design around circuit. This IC don’t have over current protect circuit. short 5. Short Circuit between Pins and Incorrect Mounting Sufficient caution is required for IC direction or displacement when installing IC on PCB. If IC is installed incorrectly, it may be broken. Also, the threat of destruction may exist in short circuits caused by foreign object invasion between outputs or output and GND of the power supply. 6. Common Impedance When providing a power supply and GND wirings, give sufficient consideration to lowering common impedance, reducing ripple (i.e. making thick and short wiring, reduction ripple by LC, etc.) as much as possible. ～ ～ （Pin B） E C Parasitic element GND + P P + + P P P N N P N N （Pin B） P substrate P substrate GND GND + N N Parasitic N Parasitic GND C ～ ～ （Pin A） （Pin A） Transistor B Resist B E GND Parasitic element REV. A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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