AP2313GN - Advanced Power Electronics Corp

AP2313GN
Halogen-Free Product
Advanced Power
Electronics Corp.
▼ Capable of 2.5V Gate Drive
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Small Package Outline
▼ Surface Mount Device
S
▼ RoHS Compliant & Halogen-Free
SOT-23S
BVDSS
-20V
RDS(ON)
160mΩ
ID
-2.5A
G
D
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
G
S
The SOT-23S package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such as
DC/DC converters.
Absolute Maximum [email protected]=25o.C(unless otherwise specified)
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
-20
V
VGS
Gate-Source Voltage
+12
V
3
[email protected]=25℃
Drain Current , VGS @ 4.5V
-2.5
A
[email protected]=70℃
3
-1.97
A
Drain Current , VGS @ 4.5V
1
IDM
Pulsed Drain Current
-10
A
[email protected]=25℃
Total Power Dissipation
0.83
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
150
℃/W
1
201411175AP
AP2313GN
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-20
-
-
V
VGS=-10V, ID=-2.8A
-
-
120
mΩ
VGS=-4.5V, ID=-2.5A
-
-
160
mΩ
VGS=-2.5V, ID=-2A
-
-
300
mΩ
-0.4
-
-1.2
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-5V, ID=-2A
-
4
-
S
IDSS
Drain-Source Leakage Current
VDS=-20V, VGS=0V
-
-
-1
uA
IGSS
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-2A
-
5
8
nC
Qgs
Gate-Source Charge
VDS=-16V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2
-
nC
td(on)
Turn-on Delay Time
VDS=-10V
-
6
-
ns
tr
Rise Time
ID=-1A
-
17
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
16
-
ns
tf
Fall Time
VGS=-10V
-
5
-
ns
Ciss
Input Capacitance
.
VGS=0V
-
270
430
pF
Coss
Output Capacitance
VDS=-20V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
55
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1.2A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-2A, VGS=0V,
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 360 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2313GN
15
15
-5.0V
-4.5V
T A =25 o C
12
12
-3. 5 V
-ID , Drain Current (A)
-ID , Drain Current (A)
-5.0V
-4.5V
T A = 150 o C
9
-2.5V
6
3
-3.5V
9
-2.5V
6
3
V G = - 1. 5 V
V G = - 1. 5 V
0
0
0
1
2
3
4
5
0
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2
3
4
5
Fig 2. Typical Output Characteristics
1.6
200
I D =-2A
I D = - 2.5 A
V G = -4.5V
1.4
160
.
120
Normalized RDS(ON)
T A =25 o C
RDS(ON) (Ω )
1
-V DS , Drain-to-Source Voltage (V)
1.2
1.0
0.8
80
0.6
2
4
6
8
-50
10
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
Normalized VGS(th)
3
2
-IS(A)
T j =150 o C
T j =25 o C
1
0
1.2
0.8
0.4
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2313GN
f=1.0MHz
1000
I D =- 2 A
V DS =-16V
6
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
8
4
100
C oss
C rss
2
10
0
0
2
4
6
1
8
5
Fig 7. Gate Charge Characteristics
13
17
21
25
Fig 8. Typical Capacitance Characteristics
100
100us
Operation in this
area limited by
RDS(ON)
1
.
1ms
10ms
100ms
0.1
1s
DC
T A =25 o C
Single Pulse
Normalized Thermal Response (Rthja)
1
10
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
PDM
0.1
t
T
0.05
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja = 360℃/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP2313GN
MARKING INFORMATION
Part Number : NF
NFSS
Date Code : SS
SS:2004,2008,2012…
SS:2003,2007,2011…
SS:2002,2006,2010…
SS:2001,2005,2009…
.
5