AP40T03GS/P-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Low Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
30V
RDS(ON)
25mΩ
ID
G
28A
S
Description
AP40T03 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance. The
through-hole version (AP40T03GP) are available for low-profile
applications.
G
D
S
G
D
TO-263(S)
TO-220(P)
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+25
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
28
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
24
A
95
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
31.25
W
Linear Derating Factor
0.25
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
4
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
40
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
201501055
AP40T03GS/P-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGS=0V, ID=250uA
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.032
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=18A
-
-
25
mΩ
VGS=4.5V, ID=14A
-
-
45
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=18A
-
15
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=125 C) VDS=24V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS= +25V, VDS=0V
-
-
+100
nA
ID=18A
-
8.8
-
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5.8
-
nC
VDS=15V
-
6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=18A
-
62
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
16
-
ns
tf
Fall Time
VGS=10V
-
4.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
655
-
pF
Coss
Output Capacitance
VDS=25V
-
145
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
95
-
pF
Min.
Typ.
-
-
28
A
-
-
95
A
-
-
1.3
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.3V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
1
2
Forward On Voltage
Tj=25℃, IS=28A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP40T03GS/P-HF
90
75
10V
8 .0V
ID , Drain Current (A)
6 .0V
60
10V
8 .0V
o
T C =150 C
ID , Drain Current (A)
o
T C =25 C
30
50
6 .0V
25
V G =4.0V
V G = 4. 0V
0
0
0.0
1.0
2.0
3.0
4.0
0.0
1.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3.0
4.0
Fig 2. Typical Output Characteristics
2.0
70
I D =18A
V G =10V
Normalized RDS(ON)
I D =14A
T C =25 ℃
RDS(ON) (mΩ)
2.0
V DS , Drain-to-Source Voltage (V)
50
1.4
0.8
30
0.2
10
0
5
10
15
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
100
2.0
10
IS(A)
VGS(th) (V)
T j =25 o C
T j =150 o C
1.5
1
1.0
0.5
0.1
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
o
T j , Junction Temperature ( C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP40T03GS/P-HF
f=1.0MHz
12
1000
9
C iss
V DS =10V
V DS =15V
V DS =20V
C (pF)
VGS , Gate to Source Voltage (V)
I D =18A
6
C oss
C rss
100
3
10
0
0
3
6
9
1
12
8
Fig 7. Gate Charge Characteristics
22
29
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
100
ID (A)
15
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
100us
10
1ms
10ms
100ms
DC
1
T C =25 o C
Single Pulse
0
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.1
1
10
100
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP40T03GS/P-HF
MARKING INFORMATION
TO-263
40T03GS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-220
40T03GP
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5