AP02N90I-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Isolation Full Package
▼ Fast Switching Characteristics
BVDSS
900V
RDS(ON)
7.2Ω
ID
1.9A
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP02N90 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
G
D
TO-220CFM(I)
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
900
V
VGS
Gate-Source Voltage
+30
V
ID@TC=25℃
Drain Current, VGS @ 10V
1.9
A
ID@TC=100℃
Drain Current, VGS @ 10V
1.2
A
6
A
34.7
W
0.28
W/℃
18
mJ
1.9
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Linear Derating Factor
2
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.6
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data & specifications subject to change without notice
1
201501074
AP02N90I-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGS=0V, ID=1mA
Min.
Typ.
Max. Units
900
-
-
V
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS/∆Tj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.8
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=0.85A
-
-
7.2
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=1.9A
-
2
-
S
IDSS
Drain-Source Leakage Current
VDS=900V, VGS=0V
-
-
10
uA
o
IGSS
Drain-Source Leakage Current (T j=125 C) VDS=720V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
ID=1.9A
-
12
20
nC
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=540V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
4.7
-
nC
3
td(on)
Turn-on Delay Time
VDD=450V
-
10
-
ns
tr
Rise Time
ID=1.9A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=10Ω
-
18
-
ns
tf
Fall Time
VGS=10V
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
630
1000
pF
Coss
Output Capacitance
VDS=25V
-
40
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
4
-
pF
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
3
Test Conditions
IS=1.9A, VGS=0V
Max. Units
1.3
V
trr
Reverse Recovery Time
IS=1.9A, VGS=0V,
-
360
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
1.8
-
µC
Notes:
1.Pulse width limited by maximum junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω , IAS=1.9A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP02N90I-HF
2.0
1.25
10V
8.0V
6.0V
5.0V
T C =25 C
ID , Drain Current (A)
1.6
1.00
1.2
0.8
V G =4.5V
0.4
0.75
0.50
0.25
0.00
0.0
0
3
6
9
12
15
18
0
V DS , Drain-to-Source Voltage (V)
3
6
9
12
15
18
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.8
1.2
2.4
I D = 0.85 A
V G =10V
Normalized RDS(ON)
1.1
Normalized BVDSS
10V
8.0V
6.0V
5.0V
V G =4.5V
o
T C =150 C
ID , Drain Current (A)
o
1.0
2.0
1.6
1.2
0.8
0.9
0.4
0.0
0.8
-50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( o C )
o
Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.6
2.0
1.5
T j =25 o C
Normalized VGS(th)
IS(A)
T j =150 o C
1.0
1.2
0.8
0.5
0.4
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP02N90I-HF
f=1.0MHz
12
1000
C iss
I D = 1.9 A
V DS = 180 V
V DS = 360 V
V DS = 540 V
VGS , Gate to Source Voltage (V)
10
100
C (pF)
8
6
C oss
10
4
C rss
2
1
0
0
4
8
12
1
16
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10.00
Normalized Thermal Response (Rthjc)
1
100us
1.00
ID (A)
1ms
10ms
0.10
100ms
1s
DC
T C =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.01
1
10
100
1000
10000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP02N90I-HF
MARKING INFORMATION
Part Number
02N90I
YWWSSS
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5