AP6679GI - Advanced Power Electronics Corp

AP6679GI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ RoHS Compliant & Halogen-Free
G
BVDSS
-30V
RDS(ON)
9mΩ
ID
-48A
S
Description
AP6679 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
G
D
TO-220CFM(I)
S
o
Absolute Maximum [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
.
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
+25
V
[email protected]=25℃
Drain Current, VGS @ 10V
-48
A
[email protected]=100℃
Drain Current, VGS @ 10V
-30
A
300
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
31.3
W
Linear Derating Factor
0.25
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
1
201501293
AP6679GI-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-30
-
-
V
-
-0.02
-
V/℃
VGS=-10V, ID=-30A
-
-
9
mΩ
VGS=-4.5V, ID=-24A
-
-
15
mΩ
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
∆BVDSS/∆Tj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-30A
-
43
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=125 C) VDS=-24V, VGS=0V
-
-
-250
uA
IGSS
Halogen-Free
VGS= +25, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-30A
-
40
67
nC
Qgs
Gate-Source Charge
VDS=-25V
-
8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
28
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
15
-
ns
tr
Rise Time
ID=-30A
-
75
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
50
-
ns
tf
Fall Time
RD=0.5Ω
-
90
-
ns
Ciss
Input Capacitance
VGS=0V
-
3100 4590
pF
Coss
Output Capacitance
VDS=-25V
-
930
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
690
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.7
4
Ω
Min.
Typ.
IS=-30A, VGS=0V
-
-
-1.3
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=-24A, VGS=0V,
-
47
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
45
-
nC
Notes:
1.Pulse width limited Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6679GI-HF
280
150
-ID , Drain Current (A)
-ID , Drain Current (A)
-10V
-8.0V
T C =150 o C
-10V
-8.0V
T C =25 o C
210
-6.0V
140
-4.5V
-6.0V
100
-4.5V
50
V G =-3.0V
70
V G =-3.0V
0
0
0
1
2
3
0.0
4
1.0
1.5
2.0
2.5
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
35
1.8
25
.
Normalized RDS(ON)
I D =-30A
V G =-10V
I D = -24A
T C =25 ℃
RDS(ON) (mΩ )
0.5
-V DS , Drain-to-Source Voltage (V)
15
1.4
1.0
5
0.6
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
Normalized VGS(th)
1.6
20
-IS(A)
T j =150 o C
T j =25 o C
10
0
1.2
0.8
0.4
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6679GI-HF
f=1.0MHz
10000
I D = -30A
V DS = -25V
C iss
12
C (pF)
-VGS , Gate to Source Voltage (V)
16
8
C oss
C rss
1000
4
100
0
0
20
40
60
1
80
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
-ID (A)
100us
.
1ms
10
10ms
o
100ms
T C =25 C
Single Pulse
Normalized Thermal Response (R thjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
DC
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP6679GI-HF
MARKING INFORMATION
Part Number
6679GI
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
.
5