Advanced Power Electronics Corp.

AP9575AGH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Higher Gate-Source Voltage
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
-60V
RDS(ON)
64mΩ
ID
G
-17A
S
Description
G
AP9575A series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance. The
through-hole version (AP9575AGJ) are available for low-profile
applications.
G
D
D
S
S
TO-252(H)
TO-251(J)
Absolute Maximum [email protected]=25oC(unless otherwise specified)
Parameter
Symbol
.
Rating
Units
VDS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage
+30
V
[email protected]=25℃
Drain Current, VGS @ 10V
-17
A
[email protected]=100℃
Drain Current, VGS @ 10V
-11
A
-60
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
36
W
Linear Derating Factor
0.29
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Units
3.5
℃/W
62.5
℃/W
110
℃/W
1
201412022
AP9575AGH/J-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-60
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=-10V, ID=-12A
-
-
64
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-9A
-
12
-
S
IDSS
Drain-Source Leakage Current
VDS=-60V, VGS=0V
-
-
-10
uA
Drain-Source Leakage Current (T j=125oC) VDS=-48V, VGS=0V
-
-
-250
uA
IGSS
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-12A
-
35
56
nC
Qgs
Gate-Source Charge
VDS=-48V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
12
-
nC
td(on)
Turn-on Delay Time
VDS=-30V
-
12
-
ns
tr
Rise Time
ID=-12A
-
23
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
45
-
ns
tf
Fall Time
VGS=-10V
-
60
-
ns
Ciss
Input Capacitance
VGS=0V
-
1440 2300
pF
Coss
Output Capacitance
VDS=-25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
-
120
-
pF
Min.
Typ.
IS=-12A, VGS=0V
-
-
-1.3
V
.
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=-12A, VGS=0V,
-
43
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
75
-
nC
Notes:
1.Pulse width limited Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9575AGH/J-HF
60
40
-10V
-7.0V
40
-5.0V
-4.5V
20
V G =-3.0V
30
-5.0V
20
-4.5V
V G =- 4 .0V
10
0
0
0
2
4
6
8
10
0
2
4
6
8
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
210
2.0
I D = -9 A
T C =25 ℃
I D = - 12 A
V G =-10V
130
.
Normalized RDS(ON)
1.8
170
RDS(ON) (mΩ )
-10V
-7.0V
TC=150oC
-ID , Drain Current (A)
-ID , Drain Current (A)
T C =25 o C
90
1.6
1.4
1.2
1.0
0.8
0.6
50
0.4
2
4
6
8
10
-50
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
16.0
3.0
12.0
2.5
-VGS(th) (V)
-IS(A)
Fig 3. On-Resistance v.s. Gate Voltage
T j =150 o C
0
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
T j =25 o C
8.0
4.0
2.0
1.5
0.0
1.0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
12
2400
10
2000
8
f=1.0MHz
1600
I D = -12A
V DS = -48V
C (pF)
-VGS , Gate to Source Voltage (V)
AP9575AGH/J-HF
6
C iss
1200
4
800
2
400
0
0
0
10
20
30
40
50
C oss
C rss
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Operation in this
area limited by
RDS(ON)
100us
-ID (A)
10
1ms
.
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
100
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
T j =25 o C
-ID , Drain Current (A)
V DS = -5V
VG
T j =150 o C
QG
20
-10V
QGS
QGD
10
Charge
Q
0
0
2
4
6
8
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP9575AGH/J-HF
MARKING INFORMATION
TO-251
9575AGJ
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
TO-252
9575AGH
Part Number
meet Rohs requirement
for low voltage MOSFET only
.
Package Code
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5