AP85U03GMT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ SO-8 Compatible
▼ Low On-resistance
30V
RDS(ON)
5mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
82A
S
D
Description
AP85U03 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
D
D
D
S
S
S
G
PMPAK® 5x6
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current (Chip), VGS @ 10V
ID@TA=25℃
ID@TA=100℃
82
A
Drain Current, VGS @ 10V
3
24
A
Drain Current, VGS @ 10V
3
15
A
200
A
50
W
5
W
29
mJ
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
4
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
Units
2.5
℃/W
25
℃/W
1
201501057
AP85U03GMT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=20A
-
-
5
mΩ
VGS=4.5V, ID=20A
-
-
10
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=20A
-
40
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=30A
-
41.5
66
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
7.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
27
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
11
-
ns
tr
Rise Time
ID=30A
-
87
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
36
-
ns
-
ns
tf
Fall Time
VGS=10V
-
103
Ciss
Input Capacitance
VGS=0V
-
2910 4660
pF
Coss
Output Capacitance
VDS=25V
-
475
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
445
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
1.8
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
39
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
40
-
nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec
o
4.Starting Tj=25 C , VDD=20V , L=0.1mH , RG=25Ω , IAS=24A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP85U03GMT-HF
200
100
o
o
T C =25 C
T C =150 C
10V
7.0 V
80
ID , Drain Current (A)
ID , Drain Current (A)
160
10V
7 .0V
5.0V
4.5 V
5.0V
120
4.5 V
80
60
40
V G =3.0V
40
20
V G = 3.0 V
0
0
0.0
2.0
4.0
6.0
8.0
0.0
4.0
6.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
14
I D =20A
I D =20A
V G =10V
T C =25 o C
Normalized RDS(ON)
12
10
RDS(ON) (mΩ)
2.0
V DS , Drain-to-Source Voltage (V)
8
1.6
1.2
6
0.8
4
0.4
2
2
4
6
8
-50
10
50
100
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
40
T j =150 o C
T j =25 o C
30
1.2
Normalized VGS(th)
IS(A)
0
o
V GS , Gate-to-Source Voltage (V)
20
10
0.8
0.4
0
0.0
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP85U03GMT-HF
10
f=1.0MHz
4000
8
V DS =15V
V DS =18V
V DS =24V
6
C iss
3000
C (pF)
VGS , Gate to Source Voltage (V)
I D =30A
2000
4
1000
2
C oss
C rss
0
0
0
20
40
60
1
80
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
Operation in this
area limited by
RDS(ON)
ID (A)
100us
1ms
10
10ms
100ms
DC
1
T C =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x R thjc + T c
Single Pulse
0.01
0.1
0.01
0.1
1
10
100
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP85U03GMT-HF
MARKING INFORMATION
85U03GMT
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code : MT
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5