AP4525GEH-HF - Advanced Power Electronics Corp.

AP4525GEH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
D1/D2
40V
RDS(ON)
▼ Good Thermal Performance
ID
▼ Fast Switching Performance
S1
▼ RoHS Compliant & Halogen-Free
28mΩ
G1
15A
P-CH BVDSS
S2
G2
TO-252-4L
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
-40V
RDS(ON)
42mΩ
ID
-12A
D1
D2
G1
G2
S1
S2
o
Absolute Maximum [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Rating
N-channel
Units
P-channel
VDS
Drain-Source Voltage
40
-40
V
VGS
Gate-Source Voltage
±16
±16
V
[email protected]=25℃
Drain Current
15.0
-12.0
A
[email protected]=70℃
Drain Current
12.0
-10.0
A
50
-50
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
10.4
W
Linear Derating Factor
0.083
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
12
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data and specifications subject to change without notice
1
201501166
AP4525GEH-HF
N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
40
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=6A
-
-
28
mΩ
VGS=4.5V, ID=4A
-
-
32
mΩ
VGS=0V, ID=250uA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
6
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC) VDS=32V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=±16V
-
-
±30
uA
Qg
Total Gate Charge
ID=6A
-
9
14
nC
Qgs
Gate-Source Charge
VDS=20V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
td(on)
Turn-on Delay Time
VDS=20V
-
7
-
ns
tr
Rise Time
ID=6A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=3Ω,VGS=10V
-
20
-
ns
tf
Fall Time
RD=3.3Ω
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
580
930
pF
Coss
Output Capacitance
VDS=25V
-
100
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
3
Ω
Min.
Typ.
IS=15A, VGS=0V
-
-
1.8
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=6A, VGS=0V
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
2
AP4525GEH-HF
o
P-CH Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient
RDS(ON)
Min.
Typ.
-40
-
-
V
Reference to 25℃,ID=-1mA
-
-0.03
-
V/℃
VGS=-10V, ID=-5A
-
-
42
mΩ
VGS=-4.5V, ID=-3A
-
-
60
mΩ
-0.8
-
-2.5
V
VGS=0V, ID=-250uA
2
Static Drain-Source On-Resistance
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-10V, ID=-5A
-
5
-
S
IDSS
Drain-Source Leakage Current
VDS=-40V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C) VDS=-32V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=±16V
-
-
±30
uA
Qg
Total Gate Charge
ID=-5A
-
9
24
nC
Qgs
Gate-Source Charge
VDS=-20V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
5
-
nC
td(on)
Turn-on Delay Time
VDS=-20V
-
8.5
-
ns
tr
Rise Time
ID=-5A
-
15
-
ns
td(off)
Turn-off Delay Time
RG=3Ω,VGS=-10V
-
27
-
ns
tf
Fall Time
RD=4Ω
-
25
-
ns
Ciss
Input Capacitance
VGS=0V
-
770
1230
pF
Coss
Output Capacitance
VDS=-20V
-
165
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
115
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6
9
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-12A, VGS=0V
-
-
-1.8
V
trr
Reverse Recovery Time
IS=-5A, VGS=0V
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
16
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.N-CH , P-CH are same .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4525GEH-HF
N-Channel
50
50
10V
7.0V
5.0V
4.5V
T A = 25 C
ID , Drain Current (A)
40
10V
7.0V
5.0V
4.5V
o
T A = 150 C
40
ID , Drain Current (A)
o
30
20
V G =3.0V
30
20
V G =3.0V
10
10
0
0
0
1
2
3
4
5
0
6
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
120
ID=4A
T A =25 o C
1.6
Normalized RDS(ON)
RDS(ON) (mΩ )
100
ID=6A
V G =10V
80
60
1.2
40
0.8
20
2
4
6
8
25
10
50
75
100
125
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
14
12
IS(A)
T j =150 o C
Normalized VGS(th)
10
T j =25 o C
8
6
1.2
0.8
4
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4525GEH-HF
N-Channel
f=1.0MHz
1000
C iss
I D =6A
V DS =20V
8
C (pF)
VGS , Gate to Source Voltage (V)
12
C oss
100
C rss
4
10
0
0
5
10
15
1
20
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
ID (A)
10
100us
1
1ms
10ms
100ms
1s
DC
T A =25 o C
Single Pulse
0.1
Normalized Thermal Response (Rthjc)
100
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
VG
V DS =5V
ID , Drain Current (A)
40
T j =25 o C
T j =150 o C
QG
4.5V
30
QGS
QGD
20
10
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5
AP4525GEH-HF
P-Channel
50
50
-10V
-7.0V
-5.0V
-4.5V
-ID , Drain Current (A)
40
T A = 150 C
40
30
V G = - 3.0V
20
-10V
-7.0V
-5.0V
-4.5V
o
-ID , Drain Current (A)
o
T A = 25 C
30
20
V G = - 3.0V
10
10
0
0
0
1
2
3
4
5
0
6
2
-V DS , Drain-to-Source Voltage (V)
4
6
8
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
200
I D = -3 A
I D = -5A
V G = -10V
T A =25 o C
170
Normalized RDS(ON)
RDS(ON) (mΩ )
1.4
140
110
80
1.2
1.0
50
0.8
20
2
4
6
8
25
10
-V GS ,Gate-to-Source Voltage (V)
50
75
100
125
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
12
Normalized VGS(th)
10
-IS(A)
8
6
T j =150 o C
T j =25 o C
4
1.2
0.8
2
0
0.4
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4525GEH-HF
P-Channel
f=1.0MHz
10000
I D = -5 A
V DS = - 2 0 V
8
1000
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
12
4
C oss
C rss
100
0
10
0
4
8
12
16
20
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (R thjc)
Duty factor=0.5
10
-ID (A)
100us
1ms
1
10ms
100ms
1s
DC
o
T c =25 C
Single Pulse
0.1
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
VG
V DS =-5V
-ID , Drain Current (A)
40
o
QG
o
T j =25 C
T j =150 C
30
-4.5V
QGS
QGD
20
10
Charge
Q
0
0
2
4
6
8
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7
AP4525GEH-HF
MARKING INFORMATION
4525GEH
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
8