AP18N20GH,J-HF (AN2003B) - Advanced Power Electronics Corp

AP18N20GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristics
BVDSS
RDS(ON)
ID
D
▼ RoHS Compliant & Halogen-Free
200V
170mΩ
18A
G
S
Description
AP18N20 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance. The
through-hole version (AP18N20GJ) are available for low-profile
applications.
G D
S
TO-252(H)
G
D S
TO-251(J)
Absolute Maximum [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage
+ 20
V
[email protected]=25℃
Drain Current, VGS @ 10V
18
A
[email protected]=100℃
Drain Current, VGS @ 10V
9.5
A
60
A
89
W
0.7
W/℃
2
W
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
Linear Derating Factor
3
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
1.4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount) 3
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data & specifications subject to change without notice
1
201412185
AP18N20GH/J-HF
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
200
-
0.25
-
V
V/℃
VGS=10V, ID=8A
-
-
170
mΩ
VGS=0V, ID=250uA
Max. Units
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=10A
-
9.5
-
S
IDSS
Drain-Source Leakage Current
VDS=200V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS= + 20V, VDS=0V
-
-
+100
nA
ID=10A
-
19
30
nC
2
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=160V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
6
-
nC
2
td(on)
Turn-on Delay Time
VDD=100V
-
9
-
ns
tr
Rise Time
ID=11A
-
21
-
ns
td(off)
Turn-off Delay Time
RG=9.1Ω
-
25
-
ns
tf
Fall Time
VGS=10V
-
19
-
ns
Ciss
Input Capacitance
VGS=0V
-
1065 1700
pF
Coss
Output Capacitance
VDS=25V
-
185
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
3
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
2.4
Ω
Min.
Typ.
IS=10A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
180
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
1150
-
nC
Notes:
1.Pulse width limited by Max junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP18N20GH/J-HF
40
30
16V
12V
10V
8.0V
V G = 6 .0V
o
T C =150 C
ID , Drain Current (A)
o
T C =25 C
ID , Drain Current (A)
30
16V
12V
10V
8.0V
V G = 6 .0V
20
20
10
10
0
0
0
4
8
12
0
16
4
Fig 1. Typical Output Characteristics
12
16
20
Fig 2. Typical Output Characteristics
2.8
600
I D =8A
V GS =10V
I D =5A
T C =25 o C
2.4
Normalized RDS(ON)
520
RDS(ON) (mΩ)
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
440
360
280
2
1.6
1.2
0.8
200
0.4
0
120
2
4
6
8
-50
10
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C )
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
14
12
1.3
Normalized VGS(th)
IS(A)
10
8
6
T j =150 o C
T j =25 o C
1.1
0.9
4
0.7
2
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP18N20GH/J-HF
12
f=1.0MHz
10000
I D =10A
V DS =100V
V DS =130V
V DS =160V
8
Ciss
1000
C (pF)
VGS , Gate to Source Voltage (V)
10
6
Coss
100
4
10
2
Crss
0
1
0
6
12
18
24
30
1
11
21
31
41
51
61
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
100us
10
ID (A)
1ms
10ms
100ms
1s
DC
1
o
T C =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
15
V DS =5V
VG
T j =25 o C
o
T j =150 C
ID , Drain Current (A)
12
QG
10V
9
QGS
QGD
6
3
Charge
Q
0
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP18N20GH/J-HF
MARKING INFORMATION
TO-251
18N20GJ
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
TO-252
18N20GH
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5