AP2761I-A - Advanced Power Electronics Corp

AP2761I-A-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
G
▼ RoHS Compliant
BVDSS
650V
RDS(ON)
1Ω
ID
10A
S
Description
AP2761 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
G
D
S
TO-220CFM(I)
.
Absolute Maximum Ratings
Rating
Units
VDS
Symbol
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
+30
V
[email protected]=25℃
Continuous Drain Current, V GS @ 10V
10
A
[email protected]=100℃
Continuous Drain Current, V GS @ 10V
6.4
A
36
A
37
W
65
mJ
10
A
Parameter
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data & specifications subject to change without notice
1
201408125
AP2761I-A-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
3
Min.
Typ.
Max. Units
VGS=0V, ID=1mA
650
-
-
V
VGS=10V, ID=5A
-
-
1
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
4.8
-
S
IDSS
Drain-Source Leakage Current
VDS=600V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS= +30V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=10A
-
53
-
nC
Qgs
Gate-Source Charge
VDS=520V
-
10
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
15
-
nC
td(on)
Turn-on Delay Time
VDD=320V
-
16
-
ns
tr
Rise Time
ID=10A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=10Ω
-
82
-
ns
tf
Fall Time
VGS=10V
-
36
-
ns
Ciss
Input Capacitance
VGS=0V
-
2750
-
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
6
-
pF
Min.
Typ.
IS=10A, VGS=0V
-
-
1.5
V
.
Source-Drain Diode
Symbol
Parameter
3
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
610
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
8.64
-
µC
Notes:
1.Pulse width limited by max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=1.2mH , RG=25Ω , IAS=10A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2761I-A-HF
16
10
o
10V
7.0V
6.0V
5.0V
V GS =4.0V
12
10V
7.0V
6.0V
5.0V
V GS =4.0V
T C =150 o C
8
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 C
8
6
4
4
2
0
0
0
4
8
12
16
20
24
0
V DS , Drain-to-Source Voltage (V)
4
8
12
16
20
24
28
32
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
Normalized BVDSS
1.1
1
.
Normalized RDS(ON)
I D =5A
V G =10V
2
1
0.9
0.8
0
-50
0
50
100
150
-50
o
50
100
150
T j , Junction Temperature ( C )
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.5
8
1.3
Normalized VGS(th)
10
T j = 150 o C
IS (A)
0
o
T j , Junction Temperature ( C)
T j = 25 o C
6
4
2
1.1
0.9
0.7
0
0.5
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2761I-A-HF
16
f=1.0MHz
4000
V DS =330V
V DS =410V
V DS =520V
12
3000
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D =10A
8
2000
1000
4
C oss
C rss
0
0
0
20
40
60
1
80
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
ID (A)
10us
1
.
1ms
10ms
100ms
1s
DC
0.1
o
T c =25 C
Single Pulse
0.01
Normalized Thermal Response (Rthjc)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.001
1
10
100
1000
10000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) t
f
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP2761I-A-HF
MARKING INFORMATION
Part Number
Option
A
2761I
Package Code
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
.
5